Casio Computer Co., Ltd.

Hisatoshi Mori

Syunichi Sato

Kunihiro Matsuda

Naohiro Konya

Hiromitsu Ishii

Ichiro Ohno

Makoto Sasaki

Kazuhiro Sasaki

Nobuyuki Yamamura

Junji Shiota

Hiroyuki Okimoto

A liquid crystal display device includes first and second substrates arranged to face each other with a predetermined gap, and a liquid crystal layer sealed between the first and second substrates. The first substrate includes pixel electrodes and thin-film transistors connected with the pixel electrodes. The transistors are turned on based on a scanning signal from scanning lines to electrically connect the pixel electrodes to signal lines. The second substrate has an opposed electrode, which forms pixels in areas facing the pixel electrodes. The device also has a touch input contact point provided on either the pixel electrodes or the opposed electrode to correspond to a previously selected pixel. The contact point protrudes at a height smaller than the gap between the first and second substrates and is brought into conduction by flexural deformation caused by a pressing force of a touch onto the first or second substrates.

Liquid crystal display device and liquid crystal display apparatus

Arranged in a series are an electrolyte tank capable of holding one of a number of substrates, each substrate having a conducting film thereon, and a cathode so that the cathode and substrate face each other in an electrolyte, an anodizing chamber for anodizing the substrate, a pretreatment chamber for calcining a photoresist mask put on part of the conducting film, and a post-treatment chamber for washing and drying the anodized substrate. A substrate transportation mechanism is provided for serially transporting the substrates one by one from the pretreatment chamber to the post-treatment chamber via the anodizing chamber. In the anodizing chamber described above, a formation voltage is increased to a value such that an oxide film with a desired thickness is formed so that the value of a current flowing through an aluminum alloy film as the conducting film is kept constant with the current density ranging from 3.0 mA/cm.sup.2 to 15.0 mA/cm.sup.2.

Anodizing apparatus and an anodizing method

A thin film transistor panel comprises a substrate, pixel electrodes arranged on the substrate in a matrix form, TFTs each having a source electrode connected to the associated pixel electrode, gate lines and data lines, both connected to the associated TFTs. An auxiliary electrode connected to the associated gate line and a capacitance compensation electrode are provided in such a manner as to cancel a change in gate-source capacitance caused by an alignment error in the manufacturing process. The capacitance compensation electrode is shifted by the same amount as the shift of the source electrode. When the facing area between the gate electrode and source electrode increases (or decreases) due to an alignment error in the manufacturing process, the facing area between the auxiliary electrode and capacitance compensation electrode decreases (or increases). Therefore, the total gate-source capacitance or the sum of the capacitance between the facing portions of the gate electrode and source electrode and the capacitance between the facing portions of the auxiliary electrode and capacitance compensation electrode is constant regardless of a variation in the position of the source electrode.

Thin film transistor panel having an extended source electrode

A TFT panel comprises a transparent substrate made of glass, a plurality of transparent pixel electrodes arranged in a matrix on the transparent substrate, thin-film transistors (TFTs) respectively connected to the pixel electrodes, gate lines respectively connected to the gate electrodes of the TFTs arranged in a column direction of the matrix, data lines respectively connected to drain electrodes of the TFTs arranged in a line direction of the matrix, and capacitor lines for forming storage capacitors. One capacitor line is arranged so as to overlap two adjacent pixel electrodes with an insulating film interposed between the capacitor line and the adjacent pixel electrodes. Two gate lines are interposed between pairs of pixel electrode columns adjacent to each other. The gate electrodes of the TFTs of a pixel electrode column are connected to the gate line adjacent to the pixel electrode column.

Thin-film transistor panel with reduced number of capacitor lines

A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.

Thin-film transistor having electrodes made of aluminum, and an active

An anodizing method, wherein an aluminum based-system alloy film formed on an insulation substrate is soaked in an electrolytic solution of an ammonium borate water solution, and a voltage is applied between a to-be-anodized film of the aluminum system alloy film functioning as an anode and a cathode soaked in the same electrolytic solution, thereby forming a metal oxide film from the surface of the to-be-anodized film. A resistivity of the electrolytic solution is measured, and ammonia water is added to the electrolytic solution so that the measured resistivity does not exceed 120 .OMEGA.cm.

Anodizing method and apparatus

Method of forming a thin film consisting of a silicon-based material includes a first step of setting a substrate subjected to formation of a thin insulating film consisting of the silicon-based material in a chamber having high-frequency electrodes for receiving a high-frequency power while the substrate is kept heated at a predetermined temperature, a second step of supplying a process gas to the chamber, a third step of applying a high-frequency power to the high-frequency electrodes to generate a plasma, a fourth step of depositing an insulator consisting of the silicon-based material on the substrate to a predetermined thickness while gas supply in the second step and supply of the high-frequency power in the third step are kept maintained, and a fifth step of cooling the substrate on which the insulating film is formed and unloading the substrate from the chamber. In the fourth step, the substrate is kept heated within the temperature range of 230.degree. C. to 270.degree. C., and the high-frequency power is controlled to be supplied so that an RF discharge power density falls within the range of 60 to 100 mW/cm.sup.2.

Method of forming silicon-based thin film and method of manufacturing

In this film transistor used for a liquid crystal display element, etc., the source and drain electrodes are formed at positions which do not overlap the gate electrode. Capacitances between the gate and source electrodes and between the gate and drain electrodes can be almost eliminated.

Thin film transistors without capacitances between electrodes thereof

A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.

Thin-film transistor and a liquid crystal matrix display device using

A thin film transistor panel has a substrate on which a plurality of electrode lines are aligned in a matrix form, thin film transistors which are formed on crossing portions of the plurality of the electrode lines, a diffusible insulating film for covering said thin film transistors, and metal-diffused layers and are connected to source electrodes. The metal-diffused layers are formed by diffusing a metal into predetermined areas of said insulating film. If the metal-diffused layers are used as the pixel electrodes, high density display can be obtained due to the fine pixel electrodes. In addition, a manufacturing method of thin film transistor panel having the steps of forming gate electrode on a substrate, forming gate insulating films on the gate electrodes, forming semiconductor layers on said gate insulating films, forming source and drain electrodes on said semiconductor layers except for channel portions, forming a diffusible insulating film which covers the whole surface of the substrate, providing contact holes in said insulating film corresponding to said source electrodes, and forming metal-diffused layers by diffusing a metal into the insulating film and inner surfaces of said contact holes. The metal-diffused areas can be formed in high pattern accuracy, and the fine pixel electrodes can be easily obtained if the metal-diffused areas are used as the pixel electrodes.

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Hachioji, Japan

Hisatoshi Mori