Tokyo Electron Limited

Hisato Tanaka

Akira Obi

Shigeaki Kato

Akira Iwami

Kazushi Tahara

Naoki Takayama

According to the present invention, as processing apparatus drive starts, the operating state of software used to drive the processing apparatus is monitored in real time to diagnose whether or not an abnormality has occurred (S). If it is judged through the diagnosis performed in Sthat no abnormality has occurred, the workpiece processing is allowed to continue uninterrupted and then a decision is made as to whether or not the workpiece processing has been completed (S). If the processing has been completed, the processing apparatus is stopped (S). If, on the other hand, it is judged through the diagnosis performed in Sthat an abnormality has occurred, a log of the diagnosis item with regard to which the abnormality has occurred is recorded (S). The processing apparatus is then stopped (S).

Method of maintaining and automatically inspecting processing apparatus

Method of automatically resetting processing apparatus

Electric discharge gas is made into auxiliary plasma in an electron generating chamber and electrons in the generated auxiliary plasma are introduced into an ion generating chamber. Electrons collide with molecules of material gas in the ion generating chamber to generate primary plasma. Ions in the ion generating chamber are drawn out of the primary plasma through an opening of the ion generating chamber. A magnetic field is formed by electromagnets in order to bring the plasma in the ion generating chamber into a concentrated state. A control unit is provided to store data representing optimum magnetic field intensities for ions of different types involved. The control unit so controls current applied by the power supply for the electromagnets as to produce an optimum magnetic field intensity for the type of ions to be drawn.

Ion implantation system using optimum magnetic field for concentrating

An ion source device includes an electron generating chamber detachably combined with an electron attraction electrode and an ion generating chamber through insulating members. Hooks are projected from both sides of the electron generating chamber. A holder plate is arranged under the ion generating chamber with an insulating member interposed between them. A fixing member is arranged under the holder plate. The fixing member includes a pusher supported by coned disc springs and this pusher of the fixing member is fitted into a recess on the underside of the holder plate and struck against the top of the recess. A pair of holder members are arranged along both sides of the device. The holder members are detachably engaged with the hooks of the electron generating chamber at the upper portion thereof and also detachably engaged with the fixing member at the lower portion thereof. The components ranging from the electron generating chamber to the holder plate are held and fixed between the hooks of the electron generating chamber and the pusher of the fixing member through the holder members.

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Yamanashi, Japan

Hisato Tanaka