Fuji Electric Co., Ltd.

Hisato Katou

Harutaka Taniguchi

Tomoyuki Kawashima

Kazuyoshi Shibata

Shin'ichi Nakamata

Shinichi Nakamata

A method for manufacturing a thin-film EL device utilizes a Zn-Mn target that contains less Mn than the optimum Mn concentration on the basis of the finding that the light-emitting layer grown by the sputtering method contains more Mn than in the target. Manganese concentration on the target surface layer is controlled by changing the area ratio between ZnS and Mn exposed on the surface of the target. Manganese concentration on the target surface is controlled at preferably from 0.3 to 0.4 wt % when the target surface is sulfurized during sputtering and less than 0.1 wt % when the target surface is not sulfurized.

Method for manufacturing thin-film EL device

A light-emitting layer is prepared by using sputtering gas containing H.sub.2 S gas at a concentration greater than 20% by volume, and by sputtering a target under the optimal electric discharge power corresponding to the concentration of H.sub.2 S gas. A light-emitting layer having good light-emitting characteristics is obtained under a high film-forming rate.

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Yokosuka, Japan

Hisato Katou