Sharp Kabushiki Kaisha Corporation

Hisataka Suzuki

Masaya Okamoto

Atsushi Ban

Noriko Watanabe

Shigeaki Mizushima

Mitsuaki Hirata

Hiroko Iwagoe

Seiji Makino

A thin-film transistor of the reversed stagger type is provided with a gate electrode, first and second gate insulating films, a semiconductor layer, separated contact layers, and source electrodes and drain electrodes, all of which are stacked on a substrate. Upon manufacturing the thin-film transistor of this type, a gap section is pattered in a single contact-material layer. In this case, the contact-material layer is patterned by a dry etching with etching gases including HCl&plus;SF,or CF,&plus;O,&plus;HCl by the use of the source electrode and drain electrode as direct masks. Upon patterning a gap section in the contact-material layer between the source electrode and the drain electrode, no dedicated resist pattern is required; therefore, it is possible to reduce the number of the processes as compared with conventional manufacturing methods. Consequently, it becomes possible to reduce the production cost of thin-film transistors and also to improve the yield of desired products.

Manufacturing method of a thin-film transistor of a reverse staggered type

A thin-film transistor of the reversed stagger type is provided with a gate electrode, first and second gate insulating films, a semiconductor layer, separated contact layers, and source electrodes and drain electrodes, all of which are stacked on a substrate. Upon manufacturing the thin-film transistor of this type, a gap section is pattered in a single contact-material layer. In this case, the contact-material layer is patterned by carrying out etching by the use of the source electrode and drain electrode as direct masks or by the use of a resist pattern that was used for forming the respective electrodes. Upon patterning a gap section in the contact-material layer between the source electrode and the drain electrode, no dedicated resist pattern is required; therefore, it is possible to reduce the number of the processes as compared with conventional manufacturing methods. Consequently, it becomes possible to reduce the production cost of thin-film transistors and also to improve the yield of desired products.

Manufacturing method of a thin-film transistor

The liquid crystal display apparatus of the invention includes a first substrate and a second substrate disposed so as to face each other, a liquid crystal layer sandwiched between the first substrate and the second substrate, a first alignment film formed between the liquid crystal layer and theist substrate, and a second alignment film formed between the liquid crystal layer and the second substrate. In the liquid crystal display apparatus, the liquid crystal layer includes a plurality of liquid crystal layer regions having aligning conditions which are different from each other, the plurality of liquid crystal layer regions including a first liquid crystal layer region and a second liquid crystal layer region, and wherein the orientation direction in a substrate plane of liquid crystal molecules in the vicinity of the center of the first liquid crystal layer region is different from the orientation direction in the substrate plane of liquid crystal molecules in the vicinity of the center of the second liquid crystal layer region, substantially by 90.degree..

Liquid crystal display apparatus having regions with different pretilt

Growing community of inventors

Taki-gun, Japan

Hisataka Suzuki