Hitachi Cable, Inc.

Hisataka Nagai

Toshihiro Morisawa

Takehiko Tani

Takashi Furuya

In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

Manufacturing method of semiconductor photonic device substrate

A method of cooling a complex electronic system includes preventing system air from passing through a front side and a rear side of a server system main board, organizing a plurality of electronic segments of the server system main board, providing cool air horizontally to the server system main board through a cool air intake provided at a position located underneath the front side and at a bottom side of the server system main board, using the cool air intake to provide the cool air to a plurality of cooling segments that redirect the cool air vertically at a 90&#xb0; angle, and using a hot air exhaust after the hot air reaches the top side of the server system main board to redirect the hot air horizontally at a 90&#xb0; angle and exhaust the hot air.

Vapor phase growth apparatus

A vapor phase growth apparatus has a plurality of rotation susceptors to hold the semiconductor wafer, and a disk-like revolution susceptor on which the plurality of rotation susceptors are rotatably mounted through a bearing. The plurality of rotation susceptors each are, on its periphery, provided with a pinion gear that meshes with a common gear that allows each of the plurality of rotation susceptors to rotate on its center axis. The outermost end of rotation susceptor is substantially aligned with the outermost end of revolution susceptor and the pinion gear is located directly above the bearing.

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Hitachi, Japan

Hisataka Nagai