Kabushiki Kaisha Toshiba

Tokyo Shibaura Electric Co., Ltd.

Tokyo Shibaura Denki Kabushiki Kaisha

Fujikura Limited

Kabuhsiki Kaisha Toshiba

International Superconductivity Technology Center, the Juridical Foundation

Hisashi Yoshino

Noburu Fukushima

Hiromi Niu

Tsutomu Okutomi

Shunji Nomura

Yutaka Yamada

Hiroyuki Kayano

Yoshiaki Terashima

Satoru Murase

Seishi Chiba

Tomohisa Yamashita

Shigeo Nakayama

Masakatsu Haga

Ken Ando

Misao Koizumi

Masachika Iida

Masashi Sahashi

Mutsuki Yamazaki

Tomonori Watanabe

Akio Hori

Hiromitsu Takeda

Hiroyuki Fuke

Izumi Hirabayashi

Shuichi Komatsu

Masako Nakahashi

Yasuji Yamada

Yasuhiro Iijima

Tadahiko Maeda

Sadaaki Mori

Tatsuo Yamazaki

Makoto Shirokane

Takashi Yorifuji

Eiichi Takayanagi

Toshihiko Maeda

Seok Beom Kim

Haruhiko Kurosaki

Tadahito Tsutsumi

Kouichi Tejima

Koji Muranaka

Kazuyoshi Kuwabara

Teruo Oshima

Toshihiro Suga

There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO&#x2014;CuO&#x2014;BaFsystem or a BaO&#x2014;CuO&#x2014;Ag&#x2014;BaFsystem, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850&#xb0; C.

Method of preparing oxide crystal film/substrate composite and solution for use therein

There is disclosed a planar filter which can variably control a pass frequency band with a high precision and which is superior in skirt property and little in ripple. A planar filter member and tuning member are disposed opposite to each other via a predetermined gap. The filter member is structured in such a manner that an input/output portion formed of a superconductor and a plurality of resonance elements are formed on a substrate. The tuning member is structured in such a manner that on the surface of a magnetic plate with a permeability changing by an applied magnetic field, a plurality of dielectric thin films, and a plurality of electrodes for applying electric fields to the dielectric thin films are arranged. Each of the dielectric thin films is disposed in a position opposite to a gap between the resonance elements of the filter member, or a gap between the filter member and the input/output portion. By applying a voltage between the electrodes, an effective permittivity &isin; of the gap between the resonance elements, or the gap between the resonance element and the input/output portion is variably controlled, and the skirt property and ripple are adjusted. Moreover, a resonance frequency of the resonance elements, a coupling between the resonance elements, and a coupling between the resonance element and the input/output portion may be individually and independently controlled.

Planar filter and filter system using a magnetic tuning member to provide permittivity adjustment

An oxide superconductive wire having practically sufficient tensile strength and superconductive properties is claimed. A first aspect of the present invention includes a first metallic layer made of a silver based alloy containing a metal selected from the group consisting of copper, antimony, tin, germanium, gallium, indium, zinc, platinum and palladium; a second metallic layer having a tensile strength higher than that of silver and fixed to the first metallic layer; and an oxide superconductor layer formed on the first metallic layer. Another aspect of the present invention provides an oxide superconductive wire having first and a second layers and an oxide superconductive wire. The first metallic layer is made of silver and oriented along crystallographic (210) plane. The second metallic layer has a tensile strength higher than that of silver and is fixed to the first metallic layer. The present invention also provides a superconductive device using each of the oxide superconductive wires. The oxide superconductor layer formed on the first metallic layer of the superconductive device is disposed on the inner side of a coiled oxide superconductive wire.

Oxide super conductive wire and a super conductive device

A starting material which is converted to a continuous body of an oxide superconductor by a heat treatment is filled in a tubular Ag sheath member. The diameter of the filled member is reduced by extrusion to form a wire. The wire is subjected to a heat treatment so that the starting material inside the sheath member is converted to a continuous body of an oxide superconductor. A superconducting wire constituted by the sheath member and the oxide superconductor filled inside the sheath member is obtained. A superconducting coil can be obtained by winding the superconducting wire.

Superconducting wire and method of manufacturing the same

A first electrically conductive layer whose thickness is equal to or smaller than the skin depth of the radio wave used for communication, a dielectric layer whose permittivity is changed by application of electric field, and a second electrically conductive layer whose thickness is equal to or smaller than the skin depth of the radio wave used for communication are sequentially stacked near a resonance element which is formed on the front surface of a dielectric substrate having a ground layer formed on the rear surface thereof. The effective permittivity of the dielectric layer is changed in a wide range by changing a voltage applied between the first and second electrically conductive layers to change the electric field applied to the dielectric layer. As a result, the impedance of the resonance element is changed, and when a plurality of resonance elements are arranged closely to each other to construct a filter, the coupling degree between the resonance elements is changed. Therefore, characteristics such as the resonance frequency of the resonator and the pass-band frequency of the filter are controlled by controlling a voltage to be applied.

Tunable resonance device controlled by separate permittivity adjusting

An insulating composition consisting of Bi, Sr, RE, Cu, O or of Tl, Ba, RE, Cu, O (wherein; RE is an element selected from a group consisting of Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y) aligns properly with a crystal face of an oxide superconductor because its crystal structure is the same as or similar to that of the oxide superconductor. An insulating composition in which a part of Bi is replaced by Pb is further near the oxide superconductor its construction, and the modulation structure in this insulating composition is mitigated or disappears.

Insulating composition

A protection circuit for a semiconductor device is disclosed. This circuit is connected in series with a power semiconductor device to be protected, and is comprised of a circuit breaker and current-limiting device. The current-limiting device limits the overcurrent, thereby providing a time allowance until the circuit breaker begins operate.

Protection circuit for a semiconductor device

A method for recording and reproducing information on or from an optical recording medium, which comprises: recording information by illuminating light to the optical recording medium which is equipped as a recording film with a thin film comprising dispersed fine grains of a material capable of showing a metal-insulator transition to cause the metal-insulator transition owing to the heating effect of the light; and reproducing the information by utilizing changes in optical characteristics owing to a plasma resonance absorption by the fine grains dispersed in the thin film. The method of this invention permits high-density recording with high sensitivity and upon reproduction, enables reproduction of record with a high signal/noise ratio. The recording medium obtained by this method is an erasable optical recording medium, which permits its reutilization for recording and reproduction after erasure of the previously-stored record.

Method for recording and reproducing information on or from an optical

A PTC ceramic composition comprising a fundamental component represented by the formula:

PTC ceramic composition

A method of manufacturing an amalgam for sealing in a fluorescent lamp consisting of tin, lead, bismuth, indium and mercury is disclosed. In this method, the amalgam is first melted and then discharged through a nozzle to be contacted with a coolant. A fluorescent lamp containing the amalgam manufactured by the above method is also disclosed.

Method of manufacturing a low-melting point alloy for sealing in a

A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 .mu.m comprising silver (Ag) and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper (Cu) optionally, between an aluminium nitride (AlN) substrate and a copper member; and joining said aluminium nitride (AlN) substrate and said copper (Cu) member with each other by heating. A copper wiring sheet comprising the above active layer is also usable in the method.

Method for preparing highly heat-conductive substrate and copper wiring

Disclosed is an electrical contact of composite layer type which comprises an interrupting layer consisting of Cu-W alloy, Cu-WC alloy or Cu-W-WC alloy containing 20 to 60 wt % of Cu and being bonded to the top surface of a base plate, and a contacting layer consisting of Ag-WC alloy, Ag-W alloy or Ag-W-WC alloy containing 20 to 60 wt % of Ag and being bonded to the top surface of said interrupting layer.

Electrical contact

A vacuum circuit breaker comprising an evacuated envelope and a pair of movable conductive rods within the envelope having points of contact equipped with contact members, wherein the conductive rods slide into and out of engaging contact, the improvement comprising at least one of said contacts having circuit-making and breaking members formed of an alloy consisting essentially of 4 wt% to 9.4 wt% aluminum, 0.5 wt% to 3.5 wt% of beryllium, 0.1 wt% to 10 wt% of Me.sub.1, wherein Me.sub.1 is at least one metal selected from the group consisting of bismuth, tellurium, selenium, antimony, magnesium and lead, and the balance copper.

Vacuum circuit breaker

Growing community of inventors

Machida, Japan

Hisashi Yoshino