Kabushiki Kaisha Toshiba

Nec Corporation

Toshiba Energy Systems & Solutions Corporation

Toshiba Electronic Devices & Storage Corporation

Toshiba Lighting & Technology Corporation

Alpad Corporation

Hisashi Yoshida

Shinya Nunoue

Shigeya Kimura

Toshiki Hikosaka

Naoharu Sugiyama

Yoshiyuki Harada

Hisao Miyazaki

Hajime Nago

Jumpei Tajima

Hung Hung

Tomonari Shioda

Tatsuo Shimizu

Hiroshi Tomita

Ryosuke Iijima

Takeshi Hoshi

Ryo Yoshimatsu

Souichi Ueno

Koichi Tachibana

Jongil Hwang

Kotaro Zaima

Taisuke Sato

Maki Minamoto

Toshiyuki Oshima

Yosuke Nishikage

Hiroshi Ono

Takashi Kobayashi

Masahiko Kuraguchi

Toshiyuki Oka

Daimotsu Kato

Maki Sugai

Miki Yumoto

Kenjiro Uesugi

Hiromichi Kawashima

Katsuo Imazuka

Kazuya Ito

Akimichi Morita

Tomoya Takeda

Ichiro Tanaka

Yoshinori Muraoka

Satoko Ishikawa

Masaya Yamamitsu

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN (0<x≤1), a second nitride region including AlGaN (0≤x<1), and an intermediate region being between the first nitride region and the second nitride region. In a first direction from the first nitride region to the second nitride region, an oxygen concentration in the nitride member has a peak value at a first position included in the intermediate region. The peak value is 4.9 times or more a first oxygen concentration in the first nitride region. A second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region.

Nitride semiconductor and semiconductor device

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN, a second nitride region including AlGaN, and a third nitride region including AlGaN. The second nitride region is provided between the first and third nitride regions in a first direction from the first nitride region to the second nitride region. The second nitride region includes carbon and oxygen. The first nitride region does not include carbon, or a second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region. The second carbon concentration is higher than a third carbon concentration in the third nitride region. A ratio of a second oxygen concentration in the second nitride region to the second carbon concentration is not less than 1.0×10and not more than 1.4×10.

According to one embodiment, a switch device includes a container configured to house a gas, a cathode located in the container, a first anode located in the container, and a second anode located in the container. A second direction from the cathode toward the second anode crosses a first direction from the cathode toward the first anode. A second distance between the cathode and the second anode is greater than a first distance between the cathode and the first anode.

Switch device

According to one embodiment, a thermionic power generation element includes a cathode, an anode, and an insulating member. The cathode includes an electrically-conductive material. The anode includes an electrically-conductive material. The insulating member is located between the cathode and the anode. The cathode and the anode have a gap between the cathode and the anode. A first through-hole is provided in the anode. The first through-hole extends through the anode in a first direction and communicates with the gap. The first direction is from the cathode toward the anode.

Thermionic power generation element and thermionic power generation module

According to one embodiment, a power generation element includes an element part. The element part includes a first conductive member, a second conductive member, and a plurality of first structure bodies provided between the first conductive member and the second conductive member. One of the first structure bodies includes a first portion and a second portion. The first portion is fixed to the first conductive member. The second portion is between the first portion and the second conductive member. A second length along a second direction of the second portion is less than a first length along the second direction of the first portion. The second direction crosses a first direction from the first conductive member toward the second conductive member.

Power generation element

According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.

According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.

Power generation element and power generation system

A power generation element includes a first crystal region including AlGaN (0&#x3c;x1&#x2264;1), and a second crystal region including a first element and AlGaN (0&#x2264;x2&#x3c;x1). The first element includes at least one selected from the group consisting of Si, Ge, Te, and Sn. The first crystal region includes a first surface and a second surface. The second surface is between the second crystal region and the first surface. The second crystal region includes a third surface and a fourth surface. The third surface is between the fourth surface and the first crystal region. An orientation from the fourth surface toward the third surface is along a &#x3c;0001&#x3e; direction of the second crystal region. An orientation from the second surface toward the first surface is along a &#x3c;000-1&#x3e; direction of the first crystal region.

Power generation element, power generation module, power generation device, and power generation system

According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes AlGaN (0&#x3c;x1&#x2264;1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.

Electron emitting element and power generation element

According to one embodiment, an electron-emitting element includes a first member and a second member. The first member includes a semiconductor member of an n-type. The second member includes a diamond member a p-type and includes at least one selected from the group consisting of diamond and graphite. The semiconductor member includes at least one selected from the group consisting of a first material, a second material, and a third material. The first material includes nitrogen and at least one selected from the group consisting of B, Al, In, and Ga. The second material includes at least one selected from the group consisting of ZnO and ZnMgO. The third material includes at least one selected from the group consisting of BaTiO, PbTiO, Pb(Zr, Ti)O, KNbO, LiNbO, LiTaO, NaWO, ZnO, BaNaNbO, PbKNbO, and LiBO.

Electron-emitting element

According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, and a first member. The first member is provided between the first conductive layer and the second conductive layer. The first member includes a first semiconductor having polarity. A gap is between the second conductive layer and the first member. A &#x3c;000-1&#x3e; direction of the first semiconductor is oblique to a first direction from the first conductive layer toward the second conductive layer.

According to one embodiment, an electron-emitting electrode includes a first member, a first diamond member, and a second diamond member. A surface of the first member includes a first region and a second region. The first diamond member is provided at the first region. The first diamond member includes a first element that includes at least one of nitrogen, phosphorus, arsenic, antimony, and bismuth. The second diamond member is provided at the second region. The second diamond member includes a second element that includes at least one of boron, aluminum, gallium, and indium.

Electron-emitting electrode including multiple diamond members and magnetron including same

An embodiment of a semiconductor device including a silicon carbide layer having a first and a second planes; a first silicon carbide region of first conductivity type in the silicon carbide layer; a second silicon carbide region of second conductivity type in the silicon carbide layer between the first silicon carbide region and the first plane; a third silicon carbide region of the first conductivity type in the silicon carbide layer located between the second silicon carbide region and the first plane; a first electrode located on a side of the first plane; a second electrode located on a side of the second plane; a gate electrode; an aluminum nitride layer containing an aluminum nitride crystal between the second silicon carbide region and the gate electrode; and an insulating layer between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

Semiconductor device, inverter circuit, driving device, vehicle, and elevator

An embodiment is a semiconductor device includes a silicon carbide layer having a first plane and a second plane facing the first plane; a gate electrode; an aluminum nitride layer located between the silicon carbide layer and the gate electrode, the aluminum nitride layer containing an aluminum nitride crystal; a first insulating layer located between the silicon carbide layer and the aluminum nitride layer; and a second insulating layer located between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

Semiconductor device, inverter circuit, driving device, vehicle, and elevator having a reduced on-resistance with a silicon carbide layer

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and a first crystal member. A direction from the first electrode toward the second electrode is aligned with a first direction. A position in the first direction of the third electrode is between positions in the first direction of the first electrode and the second electrode. The semiconductor member includes at least one selected from the group consisting of silicon carbide, silicon, carbon, and germanium. The semiconductor member includes a first region, and first and second partial regions. The first region is between the first and second electrodes in the first direction. A second direction from the first region toward the third electrode crosses the first direction. The first crystal member is provided between the first and third electrodes in the second direction.

Growing community of inventors

Kanagawa-ken, Japan

Hisashi Yoshida