Hitachi, Ltd.

Elpida Memory, Inc.

Hitachi Metals, Ltd.

Hitachi Power Semiconductor Device, Ltd.

Hitachi Astemo Ltd.

Hitachi Automotive Systems, Ltd.

Hisashi Tanie

Mitsuaki Katagiri

Hiroshi Shintani

Yuji Watanabe

Eiichi Ide

Koji Hosokawa

Yu Harubeppu

Ichiro Anjo

Dai Sasaki

Hiromi Shimazu

Hiroyuki Ohta

Yuji Enomoto

Takeyuki Itabashi

Naoki Sakurai

Naoki Takeda

Hiroshi Moriya

Kisho Ashida

Hirooki Tokoi

Nae Hisano

Nobuhiko Chiwata

Motoki Wakano

Jun Kayamori

Tomohiro Onda

Kohei Matsushita

Hiroaki Ikeda

Masato Nakamura

Kinya Nakatsu

Makoto Kitano

Hiroyuki Ito

Yoshitaka Iwaji

Naotaka Tanaka

Yujiro Kaneko

Koji Sasaki

Masahiro Yamaguchi

Yusuke Takagi

Takahiro Shimura

Takayoshi Nakamura

Atsuo Nishihara

Keisuke Horiuchi

Kouji Sasaki

Naoto Saito

Takashi Sumigawa

Kenya Kawano

Kenta Deguchi

Takayuki Kushima

Yusuke Nishino

Ryota Ashizawa

Kazumoto Sano

Fusao Houjyou

Yasuhiro Nemoto

Provide is a highly reliable semiconductor device in which stress generated in a semiconductor chip is reduced and an increase in thermal resistance is suppressed. The semiconductor device includes: a semiconductor chip including a first main electrode on one surface thereof and a second main electrode and a gate electrode on the other surface thereof; a first electrode connected to the one surface of the semiconductor chip via a first bonding material; and a second electrode connected to the other surface of the semiconductor chip via a second bonding material. The first electrode is a plate-shaped electrode and has a groove in a region overlapping with the semiconductor chip. The groove penetrates in a thickness direction of the first electrode and reaches an end portion of the first electrode when viewed in a plan view.

Semiconductor device

A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layerabuts on a heat dissipation surfaceof a circuit body, and a heat dissipation memberabuts on the outside of the thermally conductive layer, which is a side of the heat dissipation surfaceof the circuit body. A fixing memberabuts on a side of the circuit bodyopposite to the heat dissipation surface. A connection memberis penetrated at the respective end portions of the heat dissipation memberand the fixing member. FIG.illustrates a state before a bolt and a nut of the connection memberare tightened. The heat dissipation memberholds a curved shape such that the central portion of the heat dissipation memberprotrudes toward the circuit body. The bolt and the nut of the connection memberare fastened and fixed at both ends of the heat dissipation memberand the fixing memberso as to sandwich the circuit body. The heat dissipation memberis elastically deformed to bring the heat dissipation memberinto close contact with the heat dissipation surfaceof the circuit bodyvia the thermally conductive layer, and surface pressure is applied from the heat dissipation memberto the heat dissipation surface

Power semiconductor device and manufacturing method of power semiconductor device

A vibration generation device which can vibrate in only one axial direction is used to simultaneously load a vibration force in a plurality of axial directions onto a test piece, and to make it possible to easily modify the proportion of vibration force in each axial direction. The present invention includes: a vibration generation device connection partwhich is connected to the vibration generation device and is vibrated in a z-axis direction; a first diaphragmwhich is connected to the vibration generation device connection partand extends in cantilevered form in an x-axis direction intersecting the z-axis direction; a second diaphragmwhich is connected to the vicinity of an end of the first diaphragmin the x-axis direction, and which extends in cantilevered form in the z-axis direction and a y-axis direction intersecting the x-axis direction; and a test piece installation parton which the test piece is installed and which receives vibrations via the first diaphragmand the second diaphragmfrom the vibration generation device connection part, wherein at least one of the first diaphragmand the second diaphragmhas a length adjustment mechanism

Test jig and test method

The present disclosure provides a disk brake capable of making it easier for the piston to return than conventional ones when the brake is released from a state where the brake is applied. In the disk brake, the seal grooveincludes a front wall, a rear wallfarther from the brake rotor than the front wallin the axial direction Dl, and a bottom wallextending along the axial direction Dl between the rear walland the front wall. The bottom wallincludes a front bottom walladjacent to the front walland a rear bottom walladjacent to the rear wall. The rear bottom wallhas a depth dfrom the inner circumferential surfaceof the cylinder, the depth dbeing larger than a dimension dof the uncompressed piston sealin the direction of the depth dand being larger than a depth dfrom the inner circumferential surfaceof the cylinderof the front bottom wall

Disk brake

Provided is a highly reliable semiconductor device capable of reducing stress generated in a semiconductor element even when a highly elastic joining material such as a Pb-free material is used in a power semiconductor having a double-sided mounting structure. The semiconductor device includes a semiconductor element including a gate electrode only on one surface, an upper electrode connected to the surface of the semiconductor element on which the gate electrode is provided, and a lower electrode connected to a surface opposite to the surface of the semiconductor element on which the gate electrode is provided. A connection end portion of the upper electrode with the surface of the semiconductor element on which the gate electrode is provided is located inside an end portion of the surface of the semiconductor element on which the gate electrode is provided, and a connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside an end portion of the opposite surface of the semiconductor element.

Semiconductor device including a semiconductor element with a gate electrode on only one surface

Some materials desired to acquire mechanical characteristics and fatigue characteristics are difficult to make in a large-size bulk material for a test piece. The invention provides a test jig which includes a primary jig which fixes both sides of a test piece, which is a test object, an upper jig which includes a load portion to load a weight on two places of an upper surface and two places of a lower surface of the primary jig, and a lower jig which includes a load portion to load a weight on two places of the upper surface and two places of the lower surface of the primary jig. The upper surface and the lower surface of the primary jig disposed on both sides of the test piece are on almost the same flat surface.

The objective of the present invention is to provide a technique that ensures conduction between a gate terminal of a semiconductor switching element and a wiring layer in a semiconductor device formed with a wiring layer inside a ceramic layer. This semiconductor device comprises: a wiring layer that is inside a ceramic layer formed above an insulation layer; and a metal layer for connecting terminals from the semiconductor switching element other than the gate terminal. The wiring layer and the gate terminal from the semiconductor switching element are connected electrically via a connection part formed from a conductive material. The connection part protrudes more than the metal layer toward the semiconductor switching element.

Semiconductor device and production method therefor

A highly reliable electromechanical integral motor is provided. In the electromechanical integral motor including an axial gap type motor and a power conversion control device, the power conversion control device is mounted on an end bracket portion of the motor. Additionally, a space is provided between the end bracket portion of the motor and the power conversion control device. Further, the end bracket portion of the motor and the power conversion control device are fixed by a plurality of fixing members, and at least one set of the plurality of fixing members is disposed to be spaced apart from each other.

Electromechanical integral motor

To significantly improve a heat dissipation property of an axial gap rotary electric machine within a size necessary for configuring a motor. In an axial gap rotary electric machine comprising a stator and a rotor in an axial direction, the stator has a plurality of stator cores arranged in a circumferential direction and coils wound around the stator cores, and a heat pipe obtained by filling an inside of a metal hollow pipe with a refrigerant is arranged in a gap between adjacent coils formed in an outer diameter portion of the stator in a radial direction and a housing with a necessary insulation distance between the coils and the heat pipe. The heat pipe extends in a direction of a rotation axis and an opposite output side, and is in contact with a heat dissipating fin outside an end bracket on the opposite output side.

Axial gap rotary electric machine

A power module or the like is provided in which lower inductance and miniaturization are achieved. The power module includes: main body units (to), cooling units (to) which cool the main body units (to), busbars () connected to power terminals () of the main body units (to), a casing (W) in which at least contact parts with the busbars () are insulative, and a metal member () which supports the casing (W). The metal member () tightly contacts the casing (W), thereby forming a box with one side opened. At least the main body units (to) and the busbars () are arranged inside the box. An insulating sealant is provided to fill the inside of the box.

Power module and method for manufacturing the same

In order to efficiently cool a heat-generating semiconductor element, it is desirable to cool a power semiconductor element from both surfaces. Therefore, in order to cool multiple power semiconductor elements, it is an effective way to alternately arrange a semiconductor component having the incorporated semiconductor element and a cooling device. A power conversion device for handling a high-power voltage needs to ensure pressure resistance between semiconductor elements or circuits inside the device. It is an effective way to seal the semiconductor component with a sealing material such as a silicone gel. Therefore, it is necessary to install the semiconductor component or the circuit having the incorporated semiconductor element, in a case from which a liquid silicone gel prior to curing does not leak even if the gel is injected. For these reasons, an object to be achieved by the invention is that the semiconductor element can be cooled from both surfaces by alternately arranging the semiconductor component having the incorporated semiconductor element and the cooling device. The above-described object can be achieved as follows. A substantially rectangular thin plate is subjected to mountain bending and valley bending so as to form a shape having as many recesses as the number of the mounted semiconductor components having the incorporated semiconductor element. Concurrently, a lateral side in a direction orthogonal to the above-described bending direction is bent so as to dispose the case in which all edges configuring an outer shape of the thin plate are arranged on substantially the same plane. The semiconductor component having the incorporated semiconductor element is arranged at a position serving as the recess of the case. The cooling devices are arranged so as to interpose the semiconductor component having the incorporated semiconductor element via the case. The semiconductor component having the incorporated semiconductor element is sealed with a silicone gel. In addition, preferably, the case is configured to include metal which has high heat conductivity. More preferably, the case is configured to include aluminum, copper, or an alloy whose principal components are both of these.

Power-module device, power conversion device, and method for manufacturing power-module device

An object of the present invention is to provide a power module having high reliability. The power module according to the present invention, includes a circuit body and a case housing the circuit body. The case has a first case member including a first base plate and a second case member including a second base plate. The first case member has a first side wall portion formed in an arrangement direction of the first base plate and the second base plate. The second case member has a second side wall portion formed in the arrangement direction, the second side wall portion coupling to the first side wall portion. The first side wall portion and the second side wall portion are formed so as to have the sum of lengths of the first side wall portion and the second side wall portion in the arrangement direction smaller than the thickness of the circuit body. The first case member has a deforming portion smaller than the first base plate and the second base plate in rigidity.

Power module

A power conversion apparatus includes: a circuit body including a switching device; a base member forming a first concave portion and a cooling surface; and a wedge inserted in the first concave portion of the base member. The first concave portion of the base member is formed by a substrate portion forming the cooling surface, a first wall disposed on the opposite side of the substrate portion from the cooling surface, and an intermediate portion interconnecting the first wall and the substrate portion. The first wall forms an insertion space for insertion of the wedge, and a heat transfer plane forming a heat dissipating surface and a heat transfer path of the circuit body. The intermediate portion is plastically deformed by inserting the wedge into the insertion space, thus causing the first wall to be displaced toward the location of the circuit body.

Power conversion apparatus including wedge inserts

The purpose of the present invention is to provide a power semiconductor device which has a light weight, high heat dissipation efficiency, and high rigidity. The power semiconductor device including a base, semiconductor circuitswhich are arranged on the base, and a cooling finwhich cools each of the semiconductor circuits, in which one or more protruding portionsare formed on the base, widths of the protruding portionsin a direction parallel to the basesurface being longer than a thickness of the base, thereby providing power semiconductor deviceswhich have a light weight, high heat dissipation efficiency, and high rigidity.

Power semiconductor device

A semiconductor device according to one embodiment has a wiring circuit board, a semiconductor chip, a die attach material and bumps. The semiconductor chip is mounted on the wiring circuit board. The die attach material is provided between the wiring circuit board and the semiconductor chip. A wiring layer is provided on one surface of the wiring circuit board. Leads are extended from the wiring layer and connected to the semiconductor chip. The bumps are provided at outer positions relative to the region where the semiconductor chip of the wiring circuit board is mounted. The wiring layer in the wiring circuit board is formed on the surface opposite from the surface on which the semiconductor chip is mounted.

Semiconductor device and stacked semiconductor device

Growing community of inventors

Tokyo, Japan

Hisashi Tanie