Fujimi Incorporated

Hisashi Takeda

Jimmy Granstrom

Jimmy Erik Grandstrom

The present technology generally relates to compositions and methods for polishing surfaces comprising a metal and a dielectric film material. Embodiments include methods for polishing a surface comprising W, TEOS/SiOand SiN, comprising applying a polishing slurry comprising an abrasive, a SiN polishing rate enhancer, and an anionic surfactant, and methods of buffering a metal oxide salt in a CMP slurry to obtain an increased robustness against TEOS removal comprising polishing a surface comprising a metal and TEOS by applying a polishing slurry comprising an anionic modified colloidal silica abrasive and an anionic surfactant.

CMP slurries

To provide a composition for rinsing or cleaning a surface to which ceria particles are attached and a surface treatment method for removing ceria particles from the surface using the same. The composition according to the present invention contains an anionic surfactant, an organic amine compound, and a protic organic acid molecule and has a pH of less than 6.

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Tualatin, OR, United States of America

Hisashi Takeda