Kabushiki Kaisha Toshiba

Meiji Seika Kaisha, Ltd.

Hisashi Suzuki

Michiaki Hiyoshi

Hideo Matsuda

Takashi Fujiwara

Takashi Ando

Takahiro Imai

Kiyoaki Katano

Yuko Kano

Kazuhiro Aihara

Tomoaki Miura

Kazuko Kobayashi

Shokichi Ohuchi

Takahisa Maruyama

Susumu Iesaka

Takehiko Sawabe

Hiromi Takata

Kazumi Ota

Toshiki Fujita

Nobuyoshi Baba

Kazumasa Aizawa

An objective of the present invention is to provide compounds that are effective against various resistant bacteria which cause current clinical problems, for example, pneumococci including penicillin resistant(PRSP),including bata-lactamase-nonproducing ampicillin-resistant(BLNAR), and(Branhamella) catarrhalis. The present invention provides 2-ethenylthio-based carbapenem derivatives represented by the formula (I) or pharmaceutically acceptable salts thereof that are effective, for example, against pneumococci including penicillin resistant(PRSP),including beta-lactamase-nonproducing ampicillin-resistant(BLNAR), and(Branhamella) catarrhalis: 

2-thioethenyl substituted carbapenem derivatives

Nitrogen-containing heterocyclic compounds having antiplatelet aggregation effect and medicinal use thereof

In a semiconductor device, a pellet electrode, which is formed on a mesa-shaped pellet, and an external electrode, with which a package is provided, are in pressure-contact with each other. A soft-metal plate which has projections along its surface is arranged between the external electrode and the pellet electrode.

Press-contact type semiconductor device

A crimp-type semiconductor device is provided with a semiconductor substrate having a lifetime-controlled region. This lifetime-controlled region is in the form of a ring, and the lifetime of the minority carriers is shortened in the region. Second-conductivity type impurity regions, which serve as emitter layers, are formed on the semiconductor substrate such that they provide a plurality of concentric arrays. The inner diameter of the ring-like lifetime-controlled region is longer than the diameter of an enveloping circle which is obtained by connecting the radially-inner ends of the impurity regions of the outermost array.

Crimp-type power semiconductor device

A gate turn-off thyristor of the crimp and anode shortcircuit type includes a semiconductor pellet having anode, cathode and gate electrodes formed on each of first and second main surfaces thereof, with the gate electrode entering into the cathode electrodes. First and second electrode members are positioned sandwiching the semiconductor pellet between them and opposing to the electrodes. First and second electrode posts are positioned sandwiching the semiconductor pellet and the electrode members between them and opposing to the electrode members. Those faces of the electrodes, electrode members and electrode posts which are opposed to one another are not fixed but contact-pressed to one another. The semiconductor pellet has at the outer rim portion thereof a region where no current flows. The outer rim of each of the electrode member and post terminates on the region through which no current flows.

Crimp-type semiconductor device having non-alloy structure

Growing community of inventors

Yokohama, Japan

Hisashi Suzuki