National Institute of Advanced Industrial Science and Technology

Sharp Kabushiki Kaisha Corporation

Sharp Corporation

Hisashi Shima

Hiroyuki Akinaga

Yukio Tamai

Fumiyoshi Takano

Kazuya Ishihara

Nobuyoshi Awaya

Yasunari Hosoi

Shigeo Ohnishi

Yasuhisa Naitoh

Shoji Ishibashi

Tomoyuki Tamura

Makoto Takahashi

An information processing device, including a resistive analog neuromorphic device element having a pair of electrodes and an oxide layer provided between the pair of electrodes, and a parallel circuit having a low resistance component and a capacitance component. The parallel circuit and the resistive analog neuromorphic device element are connected in series.

Information processing device and method of driving information processing device

The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiO(wherein x satisfies the relationship 1.6&#x2266;x&#x3c;2), and wherein the rectifying characteristics can be reversed by applying a reverse electrical signal that exceeds the critical reverse electric power between the first and second electrodes in an opposite direction. The present invention also provides a process for producing a rectifier element, which includes the steps of depositing a first electrode that contains a transition metal with an electronegativity larger than that of Ti on a substrate; depositing a layer of titanium oxide (TiO, wherein x satisfies the relationship 1.6&#x2266;x&#x3c;2) on the first electrode; exposing the surface of the titanium oxide (TiO) layer to oxygen atmosphere; and depositing a second electrode containing a transition metal with an electronegativity larger than that of Ti on the surface of the titanium oxide (TiO) layer exposed to the oxygen atmosphere.

Rectifier and process for producing the rectifier

Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.

Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device

The present invention provides switching elements having a readout margin suitable for data storage units of nonvolatile memories, which are obtained by improving the resistance ratio of metal oxide thin films having reversible variable resistance properties. The present invention provides switching elements having a metal oxide consisting of a transition metal and oxygen formed between a first electrode and a second electrode, by modifying one or more of the crystal structure, ionic valence number of metal element, and nonstoichiometricity of a stoichiometric compound consisted of the transition metal and oxygen. The present invention also provides methods for producing switching elements having reversible variable resistance characteristics due to electric power application history.

Switching elements and production methods thereof

The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.

Variable resistance element, method for producing the same, and nonvolatile semiconductor storage device

Growing community of inventors

Tsukuba, Japan

Hisashi Shima