Sharp Kabushiki Kaisha Corporation

Hisashi Saito

Yasunori Shimada

Hirohisa Tanaka

Koji Taniguchi

Hitoshi Ujimasa

Masahito Goto

A semiconductor device includes an insulating substrate; and an electrode wiring provided on an area of the insulating substrate. The electrode wiring is formed of a material selected from the group consisting of an alloy of Ta and Nb, Nb, and a metal mainly including Nb. A method for producing a semiconductor device includes the steps of forming a layer including Nb doped with nitrogen on an insulating substrate by a sputtering method in an atmosphere of an inert gas including nitrogen, and then patterning the layer to form an electrode wiring on an area of the insulating substrate; and forming an oxide film at a portion of the electrode wiring by anodization, the portion including at least a surface thereof.

Semiconductor device and a method for producing the same

An active-matrix display device having low-resistance added capacitance electrode wires in which single or plural secondary wires connected electrically to the added capacitance electrode wires reduce the apparent electrical resistance of the added capacitance electrode wires, which makes the time constant of the added capacitance electrode wires smaller, so that the charging characteristics of the added capacitance are improved and contrast and other display characteristics of the liquid crystal display device are improved.

Growing community of inventors

Tenri, Japan

Hisashi Saito