Asahi Glass Company, Limited

Asahi Glass Ceramics Co., Ltd.

Hisashi Osaki

Akira Mitsui

Atsushi Hayashi

Takuji Oyama

Otojiro Kida

Eri Suzuki

Eiichi Ando

Satoru Takaki

Junichi Shimizu

Shujiro Watanabe

Kenichi Sasaki

A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MO as the main component, wherein MO is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.

Target and process for its production, and method of forming a film having a high refractive index

A method for producing a transparent conductive film composed mainly of an oxide by sputtering using a sputtering target capable of forming a transparent conductive film, wherein intermittent electric power is supplied to the target.

Methods for producing functional films

Target and process for its production, and method for forming a film having a high refractive index

A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MO,as the main component, wherein MO,is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.

Target and process for its production, and method for forming a film having a highly refractive index

A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.

Method of an apparatus for sputtering

Sputter coating power processing portion

Growing community of inventors

Yokohama, Japan

Hisashi Osaki