Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Tokyo Electron Limited

Kioxia Corporation

Hisashi Okuchi

Hiroshi Tomita

Yasuhito Yoshimizu

Yohei Sato

Hidekazu Hayashi

Yoshihiro Ogawa

Tatsuhiko Koide

Linan Ji

Hiroyasu Iimori

Takayuki Toshima

Takehiko Orii

Hiroki Ohno

Kazuyuki Mitsuoka

Gen You

Mitsuaki Iwashita

Soichi Nadahara

Shinsuke Kimura

Mitsuhiro Omura

Satoshi Wakatsuki

Yuya Akeboshi

Yukiko Kitajima

Eiichi Nishimura

Atsuko Sakata

Masayuki Kitamura

Hiroaki Yamada

Shigeru Tahara

Tokuhisa Ohiwa

Fuyuma Ito

Mami Saito

Kentaro Shimayama

Katsuya Okumura

Masayuki Tanaka

Junichi Wada

Takeshi Ishizaki

Kazuhiro Matsuo

Yusuke Tanaka

Toshiyuki Sasaki

Shinji Mori

Kenichiro Toratani

Keiichi Sawa

Daisuke Ikeno

Yoshihiro Uozumi

Atsushi Takahashi

Tsubasa Imamura

Fumiko Yamashita

Yuta Saito

Kazuhisa Matsuda

Minako Inukai

Tomotaka Ariga

Hakuba Kitagawa

Yuji Yamada

Kazuhito Furumoto

Ryohei Kitao

Takaumi Morita

Yohei Yamamoto

Masanori Mizukoshi

In one embodiment, a method of manufacturing a semiconductor device includes forming a first layer including a metal element on a substrate, and processing the first layer by dry etching. The method further includes removing a second layer formed on a lateral face of the first layer by wet etching, after processing the first layer, and forming a first film on the lateral face of the first layer by processing the lateral face of the first layer with a liquid, after removing the second layer. Furthermore, the substrate is not exposed to ambient air, after removing the second layer and before forming the first film.

Semiconductor device and method of manufacturing the same

According to an embodiment, the substrate treatment device includes a dilutor configured to dilute a first liquid containing a metal ion and exhibiting acidity. The device further includes a pH changer configured to change a pH of the first liquid before or after being diluted by the dilutor. The device further includes a substrate conditioner configured to treat the substrate using the first liquid, which is diluted by the dilutor and with the pH changed by the pH changer.

Substrate treatment device, substrate treatment method, and semiconductor device manufacturing method

In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.

Surface treatment apparatus and method for semiconductor substrate

In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (HO) of a first content rate to etch the first metallic film. The second liquid includes water (HO) at a second content rate higher than the first content rate after the etching has started.

Substrate treatment method and substrate treatment apparatus

In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.

Semiconductor storage device comprising resistance change film and method of manufacturing the same

A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

Substrate processing method, substrate processing apparatus, and storage medium

A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state.

Substrate processing method and storage medium

In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

Apparatus and method of treating surface of semiconductor substrate

According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved. The method includes removing the catalyst layer on the sacrificial film while leaving the catalyst layer on the base of the second groove unremoved. The method includes forming a second metal film in the second groove by the plating.

Semiconductor device manufacture method

According to one embodiment, a semiconductor device includes a stacked body, a semiconductor body, and a stacked film. The stacked body includes a plurality of tungsten layers and a plurality of alloy layers of tungsten and molybdenum. At least portions of the tungsten layers are stacked with an air gap interposed. The alloy layers are provided on surfaces of the tungsten layers opposing the air gap. The semiconductor body extends in a stacking direction through the stacked body. The stacked film is provided between the semiconductor body and the tungsten layers. The stacked film includes a charge storage portion.

Semiconductor device and method for manufacturing same

A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Supercritical drying method for semiconductor substrate and supercritical drying apparatus

According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.

Supercritical drying method for semiconductor substrate

According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75&#xb0; C. but lower than a critical temperature of the alcohol.

Growing community of inventors

Yokohama, Japan

Hisashi Okuchi