Semiconductor Energy Laboratory Co., Ltd.

Other

Sharp Corporation

Hisashi Ohtani

Shunpei Yamazaki

Akiharu Miyanaga

Jun Koyama

Satoshi Teramoto

Yasushi Ogata

Takeshi Fukunaga

Toshiji Hamatani

Yasuhiko Takemura

Tamae Takano

Kenji Kasahara

Hongyong Zhang

Hideto Ohnuma

Toru Mitsuki

Koichiro Tanaka

Toru Takayama

Setsuo Nakajima

Ritsuko Kawasaki

Masahiko Hayakawa

Mitsuaki Osame

Masaaki Hiroki

Mai Akiba

Aiko Shiga

Etsuko Fujimoto

Eiji Sugiyama

Hiroki Adachi

Takuya Tsurume

Satoshi Murakami

Misako Nakazawa

Junichi Takeyama

Masakazu Murakami

Yoshitaka Dozen

Akihisa Shimomura

Yoshiharu Hirakata

Mitsunori Sakama

Naoaki Yamaguchi

Hiroyuki Shimada

Hisashi Abe

Nozomi Horikoshi

Yasuyuki Arai

Naoto Kusumoto

Taketomi Asami

Kiyoshi Kato

Kengo Akimoto

Masataka Nakada

Yuto Yakubo

Tomoyuki Aoki

Makoto Yanagisawa

Koji Moriya

Misako Hirosue

Hidenori Mori

Takaaki Koen

Naomi Kawakami

Akiharu Mitanaga

Junichiro Sakata

Hideomi Suzawa

Hideki Uochi

Yoshiaki Oikawa

Yoshifumi Tanada

Aya Anzai

Koji Dairiki

Shinji Maekawa

Chiho Kokubo

Masataka Itoh

Atsunori Suzuki

Eiichiro Tsuji

Akira Miyanaga

Masayuki Sakakura

Hideaki Kuwabara

Yukio Tanaka

Hiroshi Shibata

Akira Ishikawa

Keisuke Miyagawa

Shou Nagao

Akira Takenouchi

An object is to provide a card game machine capable of enhancing gameplay. A card game machine has a game board including a plurality of reader/writers configured to communicate with a semiconductor device which is mounted on a card and capable of wireless communication, and a control device connected to the reader/writer and configured to determine the position or orientation of the card or whether the card is put face up or down based on a signal from the reader/writer. By arrangement of a plurality of reader/writers and RF chips in the game board, not only data of the card but also signal strength can be detected, and the detailed position of an RF chip of the card which is placed on the game board can be specified.

Card game machine

It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.

Display device and method for manufacturing the display device

A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed. A portion of the circulating gas may be expelled, and can be utilized as a heat source in order to preheat a newly introduced gas.

Heat treatment apparatus and heat treatment method

A novel display device capable of adjusting color purity is provided. A novel display device with improved adhesion of a color filter is provided. A novel display device capable of excellent reflective display is provided. The display device includes a transistor, a reflective electrode layer formed on the same surface as a source electrode layer or a drain electrode layer of the transistor, a first insulating layer over the reflective electrode layer, a coloring layer which is over the first insulating layer and overlaps with the reflective electrode layer, a second insulating layer over the coloring layer, and a pixel electrode layer over the second insulating layer. The coloring layer includes at least a first opening and a second opening. The pixel electrode layer is electrically connected to the transistor through the first opening. The second insulating layer is in contact with the first insulating layer in the second opening.

Display device and electronic device with a color filter

An evaporation apparatus with high utilization efficiency for EL materials and excellent film uniformity is provided. The invention is an evaporation apparatus having a movable evaporation source and a substrate rotating unit, in which the space between an evaporation source holder and a workpiece (substrate) is narrowed to 30 cm or below, preferably 20 cm, more preferably 5 to 15 cm, to improve the utilization efficiency for EL materials. In evaporation, the evaporation source holder is moved in the X-direction or the Y-direction, and the workpiece (substrate) is rotated for deposition. Therefore, film uniformity is improved.

Fabrication system and a fabrication method of a light emitting device

A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

Semiconductor device and method for manufacturing the same

A novel display device capable of excellent reflective display is provided. The display device includes a transistor including a gate electrode layer, a gate insulating layer over the gate electrode layer, a semiconductor layer over the gate insulating layer, and a source electrode layer and a drain electrode layer over the gate insulating layer and the semiconductor layer; a reflective electrode layer on the same plane as the source electrode layer and the drain electrode layer; a coloring layer overlapping with the reflective electrode layer; a pixel electrode layer overlapping with the coloring layer; and an anti-oxidation conductive layer connected to one of the source electrode layer and the drain electrode layer. The pixel electrode layer is connected to the transistor through the anti-oxidation conductive layer.

Display device and electronic device

A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 10to 10&#x3a9;/cmis formed on at least one surface of each structure body.

A semiconductor device includes TFTs designed in accordance with characteristics of circuits. In a first structure of the invention, the TFT is formed by using a crystalline silicon film made of a unique crystal structure body. The crystal structure body has a structure in which rod-like or flattened rod-like crystals grow in a direction parallel to each other. In a second structure of the invention, growth distances of lateral growth regions are made different from each other in accordance with channel lengths, of the TFTs. By this, characteristics of TFTs formed in one lateral growth region can be made as uniform as possible.

Semiconductor device and method of manufacturing the same

It is an object of the invention to provide a light emitting device in which burden on a light emitting element having low luminous efficiency is relieved, and the deterioration of a light emitting element, the reduction in color reproduction due to the deteriorated light emitting element, and increase in electric power consumption can be suppressed. A light emitting device according to the invention has light emitting elements each of which emits one of colors corresponding to three primary colors. Further, one feature of the light emitting device according to the invention has a light emitting element which emits a neutral color. The light emitting device according to the invention has a structure in which a plurality of pixels having light emitting elements each of which emits one of colors corresponding to three primary colors, and a light emitting element which emits a neutral color as one group, are arranged.

Light emitting device

A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.

Method of fabricating a semiconductor device

A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).

Semiconductor device having display device

Growing community of inventors

Kanagawa, Japan

Hisashi Ohtani