Fujitsu Corporation

Hisashi Hamaguchi

Masao Makiuchi

Haruhisa Soda

Hiromitsu Kawamura

Kazuhiro Yamaji

Kiyotsugu Kamite

An optical semiconductor device circuit including a MI-DFB-LD capable of minimizing an extension in the wavelength of the output light in order to improve transmission speed and distance. The optical device circuit includes a semiconductor laser diode; an optical modulator for modulating output light of the semiconductor laser diode; a resistive element which is connected to the laser diode and which operates as a resistor at a high frequency; common connection substrate connected to the semiconductor laser diode and to the optical modulator; impedance element or signal reflection element connected to the common connection substrate; and ground connected to the impedance element or the signal reflection element.

Modulator integrated distributed feed-back laser diode module and device

A semiconductor device includes a substrate, a first layer formed on the substrate and made of a semiconductor of a first conductive type, a second layer formed on the first layer and functioning as a photoabsorption layer, a third layer formed on the second layer and made of a semiconductor of the first conductive type, a plurality of regions formed in the third layer and made of a semiconductor of a second conductive type opposite to the first conductive type thereby forming a plurality of pin diodes, where each of the regions at least reaches the second layer, and a plurality of electrodes respectively formed on the regions and made of the same electrode material. A first electrode of the plurality of electrodes receives a positive voltage to forward bias a first pin diode of the plurality of pin diodes and a second electrode of the plurality of electrodes receives a negative voltage to reverse bias a second pin diode of the plurality of pin diodes so that the second pin diode operates as a pin photodiode.

Method of producing semiconductor device having light receiving element

A semiconductor device includes a substrate, a first layer formed on the substrate and made of a semiconductor of a first conductive layer, a second layer formed on the first layer and functioning as a photoabsorption layer, a third layer formed on the second layer and made of a semiconductor of the first conductive type, a plurality of regions formed in the third layer and made of a semiconductor of a second conductive type opposite to the first conductive type thereby forming a plurality of pin diodes, where each of the regions at least reaches the second layer, and a plurality of electrodes respectively formed on the regions and made of the same electrode material. A first electrode of the plurality of electrodes receives a positive voltage to forward bias a first pin diode of the plurality of pin diodes and a second electrode of the plurality of electrodes receives a negative voltage to reverse bias a second pin diode of the plurality of pin diodes so that the second pin diode operates as a pin photodiode.

Growing community of inventors

Kawasaki, Japan

Hisashi Hamaguchi