Mitsubishi Materials Silicon Corporation

Mitsubishi Materials Corporation

Stanley Electric Co., Ltd

Sumco Corporation

Sumitomo Mitsubishi Silicon Corporation

Zag Ltd.

Mitsubishi Materials Quartz Corporation

Mistsubishi Material Corporation

Mitsubishi Materials Sillcon Corporation

Hisashi Furuya

Takashi Atami

Michio Kida

Hiroaki Taguchi

Yoji Suzuki

Takaaki Shiota

Kazuhiro Harada

Hiroshi Koya

Norihisa Machida

Senlin Fu

Masakazu Yamazaki

Yukio Muroi

Michio Yanaba

Hideo Tanaka

Shinji Yamagata

Yoshinobu Nakada

Masanori Fukui

Toshihiro Oikawa

Yoshiaki Arai

Keisei Abe

Kayuri Kinoshita

Yoshihisa Nonogaki

Jun Furukawa

Etsuro Morita

Daisuke Wakabayashi

Hidenobu Abe

Masao Saitoh

Toshiyasu Soda

Yuji Nakata

Yuhki Satoh

A vehicle lamp includes a first light source configured to emit first light, a first reflective member configured to reflect the first light downward with respect to a vehicle advancing direction, a second reflective member configured to reflect some of the first light reflected by the first reflective member upward with respect to the vehicle advancing direction, a second light source disposed below the second reflective member and configured to emit second light in the vehicle advancing direction, and a projection lens configured to project the first light and the second light in the vehicle advancing direction, wherein the projection lens has a refracting surface configured to refract at least some of the second light downward than an optical axis of the second light.

Vehicle lamp

A vehicle lighting unit forming low-beam and high-beam light distribution patterns can include: a light source having a substrate, and a first light-emitting section and a second light-emitting section arranged in two rows on a surface of the substrate; a first optical system configured to control light emitted from the first light-emitting section to form at least part of the low-beam light distribution pattern; a second optical system configured to control light emitted from the second light-emitting section to form at least part of the high-beam light distribution pattern; a light-shielding section disposed between the first light-emitting section and the second light-emitting section, the light-shielding section configured to shield part of the light from the first light-emitting section so as not to enter the second optical system; and a control unit configured to control to form the low-beam light distribution pattern or the high-beam light distribution pattern.

Vehicle lighting unit

Silicon wafer manufacturing method including cleaning polycrystalline silicon with dissolved ozone aqueous solution, cleaning the polycrystalline silicon with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the polycrystalline silicon with ultra pure water, melting the rinsed polycrystalline silicon and pulling a single crystal silicon ingot from the molten silicon liquid at a solidification ratio of 0.9 or less, making the pulled single crystal silicon ingot into block-shaped or grain-shaped single crystal silicon, cleaning with dissolved ozone aqueous solution, cleaning with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the single crystal silicon with ultra pure water, remelting and pulling a single crystal silicon ingot at a solidification of 0.9 or less, and forming a silicon wafer out of the single crystal silicon ingot.

Method for manufacturing a silicon wafer

A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m&#xb7;&#xb0; C.) or less, its inner peripheral face is a height (H) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.

Heat shielding member of silicon single crystal pulling system

A method of heat-treating a silicon wafer has the steps of: preparing a silicon wafer having an oxygen concentration of 1.2&times;10 atoms/cm or less (old ASTM) without generating crystal originated particles(COP'S) and interstitial-type large dislocation(L/D); forming a polysilicon layer of 0.1 &mgr;m to 1.6 &mgr;m in thickness on a back of the silicon wafer by a chemical-vapor deposition at a temperature of 670&deg; C.&plusmn;30&deg; C.; and heat-treating the silicon wafer having the polysilicon layer in an oxygen atmosphere at 1000&deg; C.&plusmn;30&deg; C. for 2 to 5 hours and subsequently at 1130&deg; C.&plusmn;30&deg; C. for 1 to 16 hours. In this method, the silicon wafer before the formation of the polysilicon layer thereon is the type of a wafer in which oxidation induced stacking faults(OSF's) manifest itself at a center of the wafer when the wafer is subjected to the heat-treatment. Accordingly, the resulting silicon wafer with a polysilicon layer is of OSF fee and COP free, even when the wafer is subjected to the conventional OSF-manifesting heat treatment. The wafer with the polysilicon layer exerts a uniform gettering effect between the peripheral edge and center of the silicon wafer as a result of a uniform oxygen precipitation occurred at the entire surface of the silicon wafer.

Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer

An ingot is manufactured by pulling it up such that V/Ga and V/Gb become 0.23 to 0.50 mm /minute &deg; C., respectively, where V (mm/minute) is a pulling-up speed, and Ga (&deg; C./mm) is and axial temperature gradient at the center of the ingot and Gb (&deg; C./mm) is an axial temperature gradient at the edge of the ingot at temperatures in a range of 1,300&deg; C. to a melting pointy of silicon. A wafer obtained by slicing the ingot is heat treated in a reductive atmosphere at temperature in a renge of 1,050&deg; C. to 1,220&deg; C. for 30 to 150 minutes. A silicon wafer free of OSF's, free of COP's, and substantially free of contamination such as Fe and of occurence of slip, is obtained.

Silicon wafer, and manufacturing method and heat treatment method of the same

A thermal shield device is equipped in a crystal-pulling apparatus for pulling a silicon monocrystal ingot from a silicon melt reserved in a quartz crucible having an outer peripheral surface encircled with a heater. The thermal shield device has a tubular part to be used for surrounding a silicon monocrystal ingot being pulled and grown in an upward direction to prevent radiant heat from the heater toward the silicon monocrystal ingot. The tubular part has a lower end positioned above a surface of the silicon melt with a predetermined spacing therebetween. A protruding part is formed on a lower portion of the tubular part and filled with a thermal-insulating member. The protruding part extends to the inside of the tubular part and has a bottom wall, a vertical wall, and a top wall. The bottom wall is shaped like a ring having an outer edge connected to a lower edge of the tubular part and extends to the proximity of an outer peripheral surface of the silicon monocrystal ingot. The vertical wall is positioned at a predetermined distance from the outer peripheral surface of the silicon monocrystal ingot and connected to an inner edge of the bottom wall. The top wall has a lower edge connected to an upper edge of the vertical wall and an upper edge attached to an inner peripheral surface of the tubular part and extends in an upward direction with a gradual increase in diameter.

Thermal shield device and crystal-pulling apparatus using the same

An improvement in the safety, ease and speed with which the operation of attaching a crucible 1 to a support base 10 of a single crystal pulling apparatus can be completed is provided. With the method of attaching the crucible 1 to the support base 10, the support base 10 is divided into a support base bottom portion 11 and a support base drum portion 12 which is fitted to the bottom portion 11, and the crucible 1 is mounted on the support base bottom portion 11. The support base 10 is then assembled by fitting the support base drum portion 12 to the support base bottom portion 11.

Methods for crucible attachment to support base of single crystal

The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.

Single crystal pulling apparatus

A single crystal pulling method employing; a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an inter-connected outer crucible and inner crucible, and a source material supply tube suspended from an upper portion of the gas tight container and positioned so that a granulated or powdered source material can be added from a lower end opening thereof to the semiconductor melt inside the outer crucible, with the source material being injected into the source material supply tube together with an inert gas flowing towards the enclosed container, characterized in that said source material is injected under conditions where the flow rate N (1/min.multidot.cm.sup.2) of the inert gas is within the range 0.0048P+0.0264&lt;N&lt;0.07P, where P (Torr) is the internal pressure inside said gas tight container.

Single crystal pulling method and apparatus for its implementation

A single crystal pulling apparatus wherein a semiconductor melt is stored in an outer crucible, and a cylindrical inner crucible which acts as a partition body, is mounted inside the outer crucible to thus form a double crucible, and a single crystal of semiconductor is pulled from the semiconductor melt inside the inner crucible. The inner crucible contains a communicating portion, which is formed when the double crucible is formed, for allowing flow of the semiconductor melt into the inner crucible, and the communicating portion incorporates an arrangement for removal of gas bubbles which have adhered to the communicating portion.

A single crystal pulling apparatus comprising: a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an outer crucible and an inner crucible which are connected at a lower edge, and source material supply means for adding source material to the semiconductor melt at a position between the outer crucible and the inner crucible, characterized in that a flow restriction member is provided inside the semiconductor melt region between the outer crucible and the inner crucible for restricting the flow of the semiconductor melt.

The principal construction of a single crystal pulling apparatus involves a chamber (gas tight chamber) inside of which is a double crucible 3 for storing a semiconductor melt 21, comprising an outer crucible 11 and an inner crucible 12 communicated with each other, and a source material supply tube 5 suspended from an upper portion of the chamber, and positioned so that granular source material 8 can be introduced from a lower end opening 5a thereof into the semiconductor melt 21 between the outer crucible 11 and the inner crucible 12. An incline portion 13 is provided at a lower end of the source material supply tube 5 on the inner crucible 12 side, for introducing source material 8 discharging from the lower end opening 5a to the semiconductor melt 21 in the vicinity of the side wall of the outer crucible 11. The entry point of the source material 8 is as far as possible from the inner crucible 12, and close to the outer wall of the outer crucible 11, and hence the added source material 8 is melted rapidly by heat from a heater surrounding the outer crucible 11, and any gas bubbles generated as a result of the introduction of the source material 8, are unlikely infuse into the inner crucible 12.

The invention is directed to preventing meltdown of conductive metal electrodes 5, 5 used to supply current to a heater 104 of a crucible 103. A single crystal pulling apparatus comprises: the heater 104 which encircles the crucible 103, and the pair of electrodes 5, 5, respectively threaded to a pair of graphite intermediate electrodes 6 of the heater 104, and a voltage source 9 for supplying power to the pair of electrodes 5, 5. A switch 11 switches the power on and off. A watthour meter 10a, continuously measures the current flowing through the heater 104. Investigation by the present inventors showed that in the case of a crack 8 in a lower portion of the intermediate electrode 6, minute fluctuations occurred in the measured value of the current, arising from an electric discharge phenomena in the crack 8 prior to meltdown of the electrodes 5, 5. Therefore, if fluctuations in the electric current measured by the wattmeter 10a are outside of a tolerance range, the controller 12 switches off the switch 11, thus interrupting power to the electrodes 5, 5, and preventing meltdown of the electrodes 5, 5.

Growing community of inventors

Tokyo, Japan

Hisashi Furuya