Oki Electric Industry Co., Ltd.

Mitsubishi Electric Corporation

Hisashi Fukuda

Satoshi Nishikawa

Daisuke Suzuki

Takeshi Yoneda

Koichi Shimizu

Nobuhiro Kobayashi

Kiyoto Kawauchi

Takumi Yamamoto

Hiroaki Kakinuma

Manabu Misawa

Takeshi Sugawara

Aiko Iwasaki

Tomiyuki Arajawa

An attribute-value extraction unit () extracts as a plurality of model-generation attribute values, a plurality of attribute values belonging to an attribute associated with a monitoring subject for anomaly detection. A division-data generation unit () extracts for each model-generation attribute value, a normal event associated with the model-generation attribute value from normal data indicating a plurality of normal events each of which is found out to be normal, each of which is associated with one attribute value of the plurality of attribute values, and each of which includes a plurality of characteristics, and generates for each model-generation attribute value, division data indicating the extracted normal event. A characteristic selection unit () selects a combination of characteristics to be used for generation of a normal model to be used for anomaly detection, from a plurality of characteristics included in a plurality of normal events indicated in a plurality of pieces of division data. A normal-model generation unit () generates the normal model for each model-generation attribute value, using the combination of characteristics selected.

Model generation apparatus, model generation method, and computer readable medium

The present invention relates to a security device which performs processes such as authentication or cryptography, for example a security device for securely holding a key used in a cryptographic process, and a security method therefore. The security device includes: an identifier generation unit to generate an identifier specific to the security device by using a PUF; a PUF key generation unit to generate a PUF key specific to the security device by using the identifier; a reception unit to receive a registration command in which the registration key and a signature generated for the registration key by using a secret key corresponding to the public key are contained; a signature verification unit to verify, using the public key, validity of the signature contained in the registration command received by the reception unit and output the verification result indicating either failure or success in the verification; and a command execution unit to reject execution of the registration command in a case where the verification result outputted from the signature verification unit is failure, and to encrypt the registration key of the registration command with the PUF key and then store the encrypted registration key in the registration key storage unit in a case where the verification result is success.

Security device, system, and security method

In a method of forming an insulating film, a silicon dioxide film is formed on a silicon substrate by performing heat treatment in an oxidizing gas atmosphere which does not contain nitrogen, and then the silicon dioxide film is oxynitrided by performing heat treatment in an nitrous oxide atmosphere. Prior to the formation of the silicon dioxide film, the silicon substrate is cleaned by heating it in a reducing gas atmosphere, and then heating it in a reactive gas atmosphere.

Method of forming a nitrided silicon dioxide (SiO.sub.x N.sub.y) film

In a method of forming an insulating film on a substrate wherein a substrate is cleaned by heating it in an atmosphere of a reducing gas, and heating it in an oxidizing gas, and then growing an insulating film by heating the substrate in an atmosphere of a gas used to grow the film in the same reaction chamber, the insulating film is grown in stages and an insulating film grown in each stage is crystallized by heat treatment with a temperature higher than the heat treatment for the film growth. This can be accomplished by interposing a heat treatment with the higher temperature between successive film growth stages, or by using a higher temperature for the film growth for each stage with a temperature higher than that for the film growth in the preceding stage.

Method of forming an insulating film

In an apparatus for and a method of ion implantation for implanting boron (B) and/or arsenic (As) ions in a substrate surface, a four-element alloy of platinum, silicon, arsenic, and boron or a three-element alloy of copper (Cu), arsenic, and boron is held in a reservoir in a molten state. The alloy is then supplied from the reservoir to an emitter, and a strong electric field is applied to the tip of the emitter to extract ions from the tip of the emitter. The reservoir and emitter may be a refractory metal selected from W, Mo, and Ta, at least the surface of which has been nitrided.

Method of ion implantation

In an apparatus for and a method of ion implantation for implanting boron (B) and/or arsenic (As) ions in a substrate surface, a four-element alloy of platinum, silicon, arsenic, and boron or a three-element alloy of copper (Cu), arsenic, and boron is held in a reservoir in a molten state; the alloy is then supplied from the reservoir to an emitter, and a strong electric field is applied to the tip of the emitter to extract ions from the tip of the emitter. The reservoir and emitter may be a refractory metal selected from W, Mo, and Ta, at least the surface of which has been nitrided.

For cleaning substrates in a cleaning device, a reaction furnace of the cleaning device in which a substrate has been installed is evacuated and then supplied with a reducing gas, and a natural oxide film on the substrate is removed by heating it in an atmosphere of reducing gas, the reaction furnace is then is evacuated and a reactive gas is introduced into the reaction furnace, and contaminants on the substrate are removed by etching the substrate in the reactive gas that has been chemically activated by UV radiation.

Method and device for cleaning substrates

A method of making an electrophotographic member with an a-Si photoconductive layer and an a-c layer as a surface protecting layer is disclosed, wherein the a-c layer is deposited on the photoconductive layer; which a-c layer contains hydrogen or hydrogen and fluorine, and which layer is formed by a glow discharge method.

Growing community of inventors

Tokyo, Japan

Hisashi Fukuda