Murata Manufacturing Co., Ltd.

Nippon Telegraph and Telephone Public Corporation

Hisashi Ariyoshi

Susumu Fukuda

Toru Kasanami

Makoto Inai

Hiroyuki Seto

Masaaki Sueyoshi

Kouichi Sakamoto

Katsutoshi Izumi

Masanobu Doken

Fujio Okui

A heterostructure insulated-gate field effect transistor comprises a channel layer, barrier layer and a contact layer. The barrier layer is made of a material having an electron affinity smaller than that of the channel layer and equal to that of the contact layer. Due to the single heterostructure, the series resistance between the channel layer and the source (drain) electrode can be decreased without employing complicated selective ion implanting or selective epitaxial growing method.

Field effect transistor

A dielectric resonator device includes a dielectric member, inner conductors provided in the dielectric member, an outer conductor formed on an outer surface of the dielectric member, signal input and output electrodes formed on the outer surface of the dielectric member opposing a mounting substrate and coupled with the inner conductors, and solder bumps formed on the outer conductor on its surface opposing the mounting substrate and on the signal input and output electrodes. By heating the dielectric resonator device opposing the mounting substrate, electrical and mechanical connections may be made therebetween through the solder bumps, while preventing the formation of solder bridges.

Dielectric resonator including a plurality of solder bumps and method of

A Schottky barrier diode includes a semiconductor substrate, an ohmic electrode formed on a first region of the semiconductor substrate, and a Schottky metal electrode formed on a second region spaced apart from the first region on the semiconductor substrate. The Schottky electrode includes at least one ohmic portion forming an ohmic contact with the semiconductor substrate, whereby rectifying characteristics of the Schottky barrier diode are improved.

Schottky barrier diode with ohmic portion

A manufacturing method for an integrated resonator is disclosed wherein a mass of O.sup.+ ions are implanted into a silicon monocrystal substrate from one side thereof, a buried SiO.sub.2 layer is formed by annealing the ion implanted substrate, an SiO.sub.2 layer is formed on the surface of the substrate by oxidizing it, at least one slit is formed on the SiO.sub.2 layer for etching a predetermined area of the silicon monocrystal layer sandwich between two SiO.sub.2 layers to form a cavity and, a piezo-electric resonator is formed on an area of the surfacial SiO.sub.2 layer corresponding to the cavity in the substrate.

Manufacturing method for integrated resonator

A production method for producing a semiconductor device by growing a crystalline compound semiconductor on a monocrystalline silicon substrate is comprised of a step for forming a transition domain varying from a monocrystalline silicon layer to a polycrystalline silicon layer in the silicon substrate by implanting oxygen ions into the silicon substrate and annealing the silicon substrate and a step for depositing a compound semiconductor layer on the silicon substrate.

Producing a compound semiconductor device on an oxygen implanted silicon

A semiconductor manufacturing method and device made therefrom by forming an insulating SiO.sub.2 film on both surfaces of a silicon substrate using an ion implantation process to form a buried SiO.sub.2 layer within the substrate a predetermined depth beneath one of the substrate surfaces, isolating a body of the substrate layer lying above the buried layer, and forming a semiconductive device in the isolated body. The surface layers of SiO.sub.2 serve to mechanically balance the internal strains generated within the substrate during the formation of the buried layer and thereby prevent the creation of mechanical imperfections in the surface portions of the substrate.

Growing community of inventors

Kyoto, Japan

Hisashi Ariyoshi