Panasonic Intellectual Property Management Co., Ltd.

Hisashi Aikawa

Hideyuki Arai

Mitsuyoshi Mori

Yusuke Sakata

Akito Inoue

Yuki Sugiura

Kentaro Nakanishi

Tatsuya Kabe

Yuya Sugasawa

A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.

Light detector

A learning device includes a camera configured to acquire image data by imaging a sample of a product, a physical property information acquisition unit configured to acquire physical property information of the sample, and a processing unit configured to generate a learning model. The processing unit is configured to identify a category of the sample based on rule information relating the physical property information to the category, to generate teacher data by relating the identified category to the image data, and to generate a learning model by machine learning using the teacher data. The learning model outputs the category of the sample in response to an input of the image data of the sample.

Learning device, inspection device, learning method, and inspection method

A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

Growing community of inventors

Osaka, Japan

Hisashi Aikawa