Semiconductor Energy Laboratory Co., Ltd.

Renesas Electronics Corporation

Hisashi Abe

Mitsunori Sakama

Shunpei Yamazaki

Toru Takayama

Hisashi Ohtani

Satoshi Teramoto

Hiroyuki Shimada

Hiroshi Uehara

Mika Ishiwata

Mitsuhiro Ichijo

Takeshi Fukada

Ryoichi Yamaguchi

A data processing device for detecting the abnormal operation of a CPU is provided. The data processing device comprises a CPU, an interrupt counter, and a counter-abnormal-value detection circuit. The interrupt counter increments a count value based on an interrupt start signal which is outputted in response to an interrupt signal indicative of an interrupt request to the CPU and which indicates that the interrupt request has been accepted, and decrements the count value based on an end-of-interrupt signal which indicates that processing corresponding to the interrupt has completed. The counter-abnormal-value detection circuit detects abnormalities by comparing the count value with a predetermined value.

Data processing device, semiconductor integrated circuit device, and abnormality detection method

A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

Method of manufacturing a semiconductor device

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamberwith a power source, a vacuum exhausting means, and a reaction gas introduction pipe, plasmais generated in a space surrounded by an electrode, a substrate holder, and an insulator

Plasma CVD apparatus

Substrate processing apparatus and a manufacturing method of a thin film semiconductor device

Manufacturing method of a thin film semiconductor device

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber with a power source a vacuum exhausting means and a reaction gas introduction pipe plasma is generated in a space surrounded by an electrode a substrate holder and an insulator

Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber,with a power source,, a vacuum exhausting means,, and a reaction gas introduction pipe,, plasma,is generated in a space surrounded by an electrode,, a substrate holder,, and an insulator

A plasma gaseous reaction apparatus including a reaction chamber, a system for supplying reaction gas to the reaction chamber and an exhaust system for exhausting unnecessary reaction products. Specifically, the apparatus includes a pair of facing electrodes disposed in the reaction chamber which are covered by shields except the area in which the electrodes face each other. The shields may include a first and second shield wherein the inner first shield is electrically insulated from the electrodes and the outer second shield is kept at earth potential. The apparatus further includes a substrate container for supporting substrates which surrounds the substrates by a frame. The outside of the substrate container is kept in the earth potential and is covered by a conductor plate electrically insulated from the container. The shields and substrate container are configured such that plasma generated by electric power supplied by the electrodes is confined in a space surrounded by the shields and the container.

Growing community of inventors

Atsugi, Japan

Hisashi Abe