Kabushiki Kaisha Toshiba

Nichiro Kogyo Co., Ltd.

Hisao Yamaguchi

Motoaki Mori

Yuichi Hirose

An N.sup.- -type epitaxial layer is formed on a P-type semiconductor substrate. A P-type region is formed in the N.sup.- -type epitaxial layer. First and second N.sup.- -type layer islands, isolated by the P-type region, are formed in the N.sup.- -type epitaxial layer. An N.sup.+ +-type contact region is formed in a surface region of the first N.sup.- -type layer island. A pad electrode is formed above the first N.sup.- -type layer island with an oxide film interposed therebetween. A polysilicon layer serving as a resistor is formed above the second N.sup.- -type layer island with the oxide film interposed therebetween. A first conductive layer for electrically connecting the polysilicon layer with the N.sup.+ -type contact region is formed on the polysilicon layer, the N.sup.+ -type contact region and the oxide film. A second conductive layer for electrically connecting the polysilicon layer with a stable high-potential power source is formed on the oxide film and the polysilicon layer.

Semiconductor device with pad electrode

A band type strapping machine comprises a swing lever, pivotally supporting a gripper for gripping a band, adapted to swing according to the rotation of a cam mounted on a cam shaft, a control bar engaged with the swing lever to follow the movement of the swing lever, a driving roller operating to engage with a band tightening roller, the driving roller being strongly brought into contact with the band tightening roller rotated at a low speed, high torque by actuation of a solenoid.

Growing community of inventors

Yokohama, Japan

Hisao Yamaguchi