Mitsubishi Denki Kabushiki Kaisha

Hisao Watarai

Fusaoki Uchikawa

Akira Yamada

Shigeru Matsuno

Shinichi Kinouchi

Toshihisa Honda

Yoshikazu Utsumi

Takehiko Sato

Kozo Shimamoto

Morihisa Takeuchi

Kimio Momiyama

Kunihiko Miyao

Takeharu Kuroiwa

Yuichi Sakai

Kiyoshi Saitou

Shin-ichi Kinouchi

Ken Sato

Masatomi Okumura

Hirosi Nakajo

Susumu Kawamata

Takashi Higaki

A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including tetrahydrofuran to form a liquid solution; vaporizing the liquid solution including the at least one organometallic compound; and forming the metal oxide dielectric thin film by depositing at least a portion of the at least one organometallic compound from the vaporized solution on a substrate.

Capacitor

A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material including a liquid solution of respective organometallic compounds of barium, strontium, and titanium dissolved in tetrahydrofuran.

Capacitor including barium strontium titanate film

The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

CVD method for forming oxide-system dielectric thin film

Infrared detection element array and method for fabricating the same

CVD Raw Material for oxide-system dielectric thin film and capacitor

A thermal-type infrared detecting element is provided which includes an infrared detecting member, a support member supporting the infrared detecting member, a substrate holding the support member, and a low thermal conduction part intervening between the substrate and a central portion of the support member, the support member having a link portion in at least a peripheral portion thereof which links the support member to the substrate and slits and/or grooves defined at a location adjacent the link portion. This infrared detecting element exhibits excellent sensitivity and responsiveness while requiring no cooling, and a one- or two-dimensional array of the element assures clear imaging with less crosstalk.

Infrared detecting element

In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100.degree. C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.

Method of manufacturing an oxide-system dielectric thin film using CVD

The improved dielectric porcelain for use at high frequencies is represented by the general formula:

Dielectric porcelain for use at high frequencies

The present invention provides microwave ceramic dielectric materials having large relative dielectric constant, very large Q, and stable and small temperature coefficient. The ceramic dielectric materials of the present invention are expressed by the general formula:

Ceramic dielectric materials for microwave use and a method for

A dielectric ceramics for high frequencies having a structure being represented by the following general formula:

Dielectric ceramics for high frequency

A dielectric ceramics for high frequencies having its dielectric constant of as high as 80 and a sufficiently high Q value (1/dielectric loss) of 1,000 or above, even in a micro-wave region, which is a compound having a structure of Sr.sub.3 Ti.sub.2 O.sub.7, and being represented by the following general formula: Sr.sub.3(1-x) Ca.sub.3x Ti.sub.2 O.sub.7 (where: 0.1&lt;x.ltoreq.0.55).

Moisture sensitive element containing high temperature decomposition

A moisture sensitive element having on an insulating substrate a moisture sensitive section that changes its electrical resistance according to the humidity of atmosphere. The moisture sensitive section is prepared by mixing a polymerized organic silicon compound with particles of a moisture sensitive, electrically resistant material, applying a coat of the resulting blend onto the insulating substrate, and sintering the coat. The element is strong, has good moisture sensitivity characteristics and can be used for an extended period with little decrease in the moisture sensitivity and little change in the value of resistance.

Growing community of inventors

Hyogo, Japan

Hisao Watarai