Sharp Kabushiki Kaisha Corporation

Other

Hisao Ochi

Tohru Sonoda

Jumpei Takahashi

Takashi Ochi

Takeshi Hirase

Tohru Senoo

Akihiro Matsui

Tetsuo Kikuchi

Hajime Imai

Hideki Kitagawa

Tohru Daitoh

Masahiko Suzuki

Tetsuo Fujita

Shingo Kawashima

Yoshinobu Miyamoto

Yoshihiro Izumi

Yoshimasa Chikama

Takeshi Hara

Teruyuki Ueda

Tohru Okabe

Hirohiko Nishiki

Hideo Ohno

Masashi Kawasaki

Ryosuke Gunji

Takeshi Yaneda

Kengo Hara

Setsuji Nishimiya

Akitsugu Hatano

Toshinori Sugihara

Toshikatsu Itoh

Yoshiki Nakatani

Tetsuya Aita

Kenichi Kitoh

Tatsuya Fujita

Hiroto Yoshioka

Tsuyoshi Senzaki

Hideki Nakada

Yuya Nakano

A display device includes: a plurality of pixel-region mask spacers disposed in a pixel region where a plurality of pixels are disposed; a plurality of frame-region mask spacers disposed in a frame region outside the pixel region so as to surround the pixel region; and a common layer disposed on the plurality of pixel-region mask spacers, the common layer being common to the plurality of pixels, wherein the common layer comprises an end that has undulations in a plan view.

Display device, mask, and method for manufacturing display device

A display panel includes a frame region surrounding a display region. The frame region includes: a frame corner including a round corner having a curved outline in plan view of the display panel; and two sides provided so that the frame corner is sandwiched between the two sides. The two sides include: a first frame side in parallel with gate wires; and a second frame side in parallel with source wires. A gate driver and an emission driver are divided and provided to the first frame side and the second frame side.

Display device with frame corner and barrier wall

A display device includes: a display including a plurality of light-emitting devices; a first bank provided outside the display; a second bank provided outside the first bank; and a plurality of peripheral lines formed below, and intersecting with, the first bank and the second bank, wherein each of the peripheral lines includes a plurality of bends provided between the first bank and the second bank in plan view.

Display device

A display device includes: a first conductive layer on a resin substrate layer; a planarization film on the first conductive layer; and OLEDs on the planarization film. There is provided a second conductive layer in a frame area surrounding a display area. The second conductive layer is in contact with second electrodes of the OLEDs on the planarization film and also in contact with the first conductive layer in an external side of the planarization film. The second electrode is electrically connected to the first conductive layer via the second conductive layer. The planarization film includes, in the frame area, a portion where there is provided a trench. The first conductive layer is exposed from the planarization film in the trench. The second electrode is electrically connected to the first conductive layer via the second conductive layer in the trench.

An organic EL display device includes an organic EL element disposed on a flattening film, and a sealing film disposed over the organic EL element, a display region, and a frame region disposed around the display region. The frame region includes a plurality of mask spacers. The flattening film has a recess disposed between the display region and the mask spacers adjacent to the display region. The recess is filled with an organic film.

Display device and manufacturing method therefor

A display device includes: a base substrate; a TFT layer; a plurality of light-emitting elements; a sealing portion; a display region; and a frame region, wherein the sealing portion includes a first sealing film provided on the plurality of light-emitting elements, a second sealing film provided above the first sealing film, a third sealing film provided above the second sealing film, and a light-transmissive conductive film provided between two sealing films of the first sealing film, the second sealing film, and the third sealing film, an edge of the first sealing film and an edge of the third sealing film are positioned outward of an edge of the second sealing film in the frame region, and the light-transmissive conductive film is electrically connected to a first electrodes or a second electrode.

Display device with light-transmissive conductive film between sealing films

A first metal layer provided on a resin substrate layer, a flattening film provided on the first metal layer, a second metal layer and a plurality of organic EL elements provided on the flattening film, and a sealing film covering the plurality of organic EL elements are provided. An organic layer provided in the sealing film includes a circumferential end edge positioned in a frame region. A slit overlapping the circumferential end edge of the organic layer is formed in an outer side of the flattening film. The first metal layer and the second metal layer are in contact with each other inside the slit. An opening is formed in a metal layer of the first metal layer and the second metal layer, the opening exposing an interlayer insulating film from the metal layer of the first metal layer and the second metal layer at a position at which the organic layer and the slit overlap each other.

Display device with frame region including metal layers across slit

A display device includes a TFT substrate including a flattening layer on a surface, a sealing film including a resin film that is an ink-jet resin film, and a first bank that surrounds the flattening layer, is covered with the resin film on an inner side, and has a frame shape. The flattening layer includes, on an entire periphery of a circumferential end portion thereof, a recessed and protruding portion provided with recesses and protrusions having sizes different on a first side and a second side in a plan view.

Display device and production method therefor

A display wiring line provided on a resin substrate layer, a flattening film covering the display wiring line, and an organic EL element provided on the flattening film are provided. The display wiring line includes first to third conductive layers layered sequentially from the resin substrate layer side. In the display wiring line, the second conductive layer is formed with a width smaller than a width of each of the first conductive layer and the third conductive layer, and a portion of a perimeter edge surface corresponding to the second conductive layer includes a recessed portion, and a resin cover covering a perimeter edge surface of the second conductive layer is provided in the recessed portion in a portion of the display wiring line exposed from the flattening film.

Display device and method for manufacturing display device

An organic EL display device is provided with an eaves body that includes a protruding portion outside a display region on a TFT substrate, along an edge portion on which a first inorganic layer and a second inorganic layer of a sealing film are provided. The first inorganic layer and the second inorganic layer cover the protruding portion and are split apart below the protruding portion facing a wall surface of the eaves body.

Display apparatus and method for manufacturing same

Provided is an active matrix substrate provided with a substrate (), a peripheral circuit that includes a first oxide semiconductor thin-film transistor (TFT) (), a plurality of second oxide semiconductor TFTs () disposed in a display area, and a first inorganic insulating layer () covering the plurality of second oxide semiconductor TFTs (), the first oxide semiconductor TFT () having a lower gate electrode (A), a gate insulating layer (), an oxide semiconductor (A) disposed so as to face the lower gate electrode with the gate insulating layer interposed therebetween, a source electrode (A) and a drain electrode (A), and an upper gate electrode (BG) disposed on the oxide semiconductor (A) with an insulating layer that includes the first inorganic insulating layer () interposed therebetween, and furthermore having, on the upper gate electrode (BG), a second inorganic insulating layer () covering the first oxide semiconductor TFT ().

Active matrix substrate

A semiconductor device (A) is provided with: a gate electrode (); an oxide semiconductor layer (); a thin-film transistor () including a gate insulating layer (), a source electrode (S), and a drain electrode (D); an inter-layer insulating layer () arranged so as to cover the thin-film transistor () and come into contact with a channel area () of the thin-film transistor (); and a transparent electroconductive layer () arranged on the inter-layer insulating layer (), the source electrode (S) and the drain electrode (D) each having a copper layer (), and the device being further provided with a copper oxide film () arranged between the source and drain electrodes and the inter-layer insulating layer (). The inter-layer insulating layer () covers the drain electrode (D) with the copper oxide film () interposed therebetween. The transparent electroconductive layer () is directly connected to the copper layer () of the drain electrode (D) inside a contact hole (CH) formed in the inter-layer insulating layer (), without the copper oxide film () being interposed therebetween.

Semiconductor device formed by oxide semiconductor and method for manufacturing same

An organic EL display device including: a base substrate; an organic EL element formed on the base substrate, and including a plurality of organic EL layers arranged in a matrix shape; and a sealing film formed on the organic EL element, wherein a plurality of subpixels are defined in association with the plurality of organic EL layers, and a plurality of grooves are formed in the sealing film through the interstices among the plurality of subpixels, and a foreign-matter contact portion configured to be in contact with a foreign matter existing on the organic EL element is formed in the sealing film.

A semiconductor device includes a substrate and a thin film transistor supported by the substrate. The thin film transistor includes a gate electrode, an oxide semiconductor layer, a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, and source and drain electrodes electrically connected to the oxide semiconductor layer. The gate insulating layer includes a first portion which is covered with the oxide semiconductor layer and a second portion which is adjacent to the first portion and which is not covered with any of the oxide semiconductor layer, the source electrode and the drain electrode. The second portion is smaller in thickness than the first portion, and the difference in thickness between the second portion and the first portion is more than 0 nm and not more than 50 nm.

Semiconductor device, and manufacturing method for same

An organic EL display device includes an organic EL element and a sealing film. The organic EL element is formed over a display region of a base substrate. The sealing film covers the organic EL element. The sealing film includes a first barrier layer, a buffer layer, and a second barrier layer. The first barrier layer includes a first inorganic film and is disposed on the surface of the organic EL element. The buffer layer includes an organic film and is disposed on the surface of the first barrier layer. The second barrier layer includes a second inorganic film and is disposed on the surface of the buffer layer. The first barrier layer includes micropores in the surface, the surface being in contact with the buffer layer.

Growing community of inventors

Sakai, Japan

Hisao Ochi