France Telecom Etablissement Autonome De Droit Public

Alcatel

France Telecom

L'etat Francais Represente Par Le Ministre Des Postes, Des

Etat Francais Represente Par Le Ministre

Hisao Nakajima

Jean Landreau

Franck Mallecot

Antonina Plais

Christine Chaumont

Arnaud Leroy

Josette Charil

Serge Slempkes

Radhouane Derouiche

In a first node, through which optical packets are able to input to the communication network, optical packets coming from the virtual network are assembled in packet field. The first node constructs a burst comprising the packet field and a label preceding the packet field and including helping to identify the virtual network and second information helping to identify a path between said first node and a second node through which the packets are able to output from the communication network. Each packet in the packet field can be preceded by an identifier identifying an interface through which the packet outputs from the communication network, and derived from a destination address in the packet.

Packet assembly in a communication network supporting virtual networks

In a semiconductor device ( ) for the transmission-reception of modulated optical signals having a semiconductor substrate on which are monolithically integrated a transmitter ( ) able to transmit a signal formed by a modulated light carried by a first wavelength, a receiver ( ) able to detect a reception signal formed by a modulated light carried by a second wavelength is also provided a sensor ( ) of a signal representative of extraneous noise and subtraction means ( ) for subtracting from the reception signal a compensation signal formed from the signal representing the extraneous noise detected by the sensor ( ). The invention also relates to a process in which the extraneous noise is detected in the vicinity of the receiver and from the signal received by the receiver is subtracted a signal formed from the detected extraneous noise signal.

Reduced smearing optronic transceiver

A semiconductor electro-optical monolithic component includes at least first and second sections (,) each having respectively a first wave guide (,) and a second wave guide (,) transmitting light, the wave guides being etched in the form of strips and confined between an upper cladding layer (,) doped with carriers of a first type and a lower layer (,A,,B) doped with carriers of a second type, a third section (,) being disposed between the first and second sections (,) and having a third guide not transmitting light, the third guide being disposed so as to couple the first guide (,) to the said second guide (,). An absorbent layer (,), having a photoluminescence wavelength at least equal to the smallest wavelength of the waves propagating in the first and second wave guides (,), is placed in the said lower layer (,A,,B) doped with carriers of the second type; the said lower layer (,A,,B) having an index lower than that of the absorbent layer (,) and that of the said second and third guides (,).

Multi-section electro-optical monolithic component

The present invention relates to a semiconductor emission device with fast wavelength modulation and constituted by three sections, namely two lateral sections, each having an active layer and a DFB network and which produce an optical gain, connected across a central electroabsorbant section, to which is applied a reverse voltage making it possible to quasi-instantaneously modify the absorption rate in said section.

Semiconductor emission device with fast wavelength modulation

A transmitter/receiver including a stack of semiconductor layers with an active layer 12 and a diffraction grating 16 with a phase shifter 18. A tapping electrode 30 is formed above the phase shifter in order to tap a voltage whose variations reflect the frequency modulation of a light beam propagating in the active layer. A bi-directional optical link is formed by connecting multiple transmitter/receivers according to the invention together via optical communication lines. The present invention finds particular application in the field of optical telecommunications.

Transmitter/receiver for frequency-modulated optical signals and optical

A coherent detection transceiver comprises a stack of semiconductor layers with an active layer (12) and a grating (16) having a phase shifter (18). An electrode (30) is placed above the phase shifter in order to tap a voltage. This voltage is processed in a heterodyne circuit (36) in order to restore the modulation of the light beam introduced into the active layer.

Coherent detection transceiver

A non-selective photoreceiver for frequency-modulated optical signals and optically using the receiver. The photoreceiver includes a laser operating under longitudinal multimode conditions, such as a FABRY-PEROT-type laser operating in a longitudinal multimode. The photoreceiver can function around any one of the longitudinal modes of the laser in overlapping frequency ranges, providing a wide overall band of operation. The plurality of modes reduces the selectively of the photoreceiver. The invention is also related to an optical link, which is either unidirectional using a photoreceiver as described above, or using two subassemblies each having a photoreceiver according to the invention, each photoreceiver being able to operate in an emission or a reception mode.

Non-selective photoreceiver for frequency-modulated optical signals and

The present invention pertains to a method and apparatus for the deposition and measurement of anti-reflective coatings on non-resonating semiconductor laser amplifiers. Two faces (15-1, 15-2) of the amplifier (15) alternately receive the sputtered material in small quantities. The semiconducting structure is supplied with constant current (16) and the voltage (V) is measured at the terminals of the structure. When the coatings are deposited on both faces, the voltage increases and passes through a maximum corresponding to the reflectivity minimum at which point deposition of the coating is stopped. The two faces are treated in the same way with coatings of the same thickness.

Process and apparatus for the deposition of anti-reflection coatings and

Photoreceptor for frequency-modulated optical signals. The photoreceptor consists of a semiconductor laser (10) fed clearly beyond the threshold (12). The optical signal (20) to be demodulated is injected into the laser. The voltage (V) taken at the terminals of the latter reflects the frequency difference between the frequency of the signal (F1, F2) and the actual frequency (Fo) of the laser.

Photoreceptor for frequency-modulated optical signals

Method to control the thickness of an antireflection coating. According to the invention, the semi-conductive structure (14) is fed with a constant current (16) and the voltage (24) is measured at its terminals. This voltage passes through a maximum when the reflectivity of the antireflection coating passes through a minimum. Application for the embodiment of semi-conductive lasers.

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Bagneux, France

Hisao Nakajima