Nippon Sheet Glass Company, Limited

Go!foton Holdings, Inc.

Go!foton Corporation

Hisao Nagata

Akimitsu Sato

Kenichiro Takeuchi

Shuhei Tanaka

Kenichi Nakama

Takashi Fukuzawa

Tadashi Koyama

Hideki Hashizume

Nobuyuki Komaba

Shunsuke Ohtsuka

Yasunori Arima

Naofumi Nishizawa

A reaction processor is provided with a reaction processing vessel in which a channel is formed, a liquid feeding system, a temperature control system for providing a high temperature region and a low temperature region to the channel, and a fluorescence detector for detecting the sample passing through a fluorescence detection region of the channel, and a CPU for controlling the liquid feeding system based on a signal that is detected. A target stop position X(n+1) of the sample in the low temperature region in an (n+1)th cycle is corrected from a target stop position X(n) of the sample in the low temperature region in the nth cycle based on the result of stopping control on the sample in the nth cycle.

Reaction processor

An optical device has a first frame element and second frame element. At least portions of a plurality of optical fiber pairs of an array each including an exposed end are arranged between the two frame elements. A region is defined between opposing surfaces of the two frame elements to hold the optical fibers. When holding the fibers, the two frame elements cooperate to positionally align and orient the exposed ends of each of the optical fibers for at least one of transmitting and receiving light. An optical system with the device includes a TAP photodiode array such that a portion of light is transmitted from at least a pair of input optical fibers to a corresponding pair of photodiodes of the array, and a portion of light is reflected back from an optical filter to output optical fibers corresponding to the input optical fibers.

Optical assembly

In an optical tap module, a first lens, a focusing lens, and a photodiode are arranged such that a center axis of a cylindrical case housing the first lens, the focusing lens, and the photodiode is substantially located on the same line. When light propagates through a second optical fiber and is emitted from an end surface facing the first lens so as to be incident on an optical filter, and light transmitted the optical filter is converged by the focusing lens, the photodiode and a chip mounting support are arranged such that a focal point of light is located spatially distant from the surfaces of the photodiode and the chip mounting support.

Optical tap module

The present invention provides an epitaxially grown compound semiconductor film having a low density of crystal defects which are generated during the course of crystal growth of a compound semiconductor. The present invention also provides a compound semiconductor multi-layer structure including an n-type InP substrate, an n-type InP buffer layer, an undoped InGaAs light-absorbing layer, and an n-type InP cap layer, the layers being successively grown on the substrate through MOCVD. In the InGaAs layer, the compositional ratio of In/Ga is cyclically varied in a thickness direction (cyclic intervals: 80 nm) so as to fall within a range of &plusmn;2% with respect to a predetermined compositional ratio that establishes lattice matching between InGaAs and InP; specifically, within a range between 0.54/0.46 (i.e., In Ga As) and 0.52/0.48 (i.e., In Ga As)

Epitaxially grown compound semiconductor film and compound semiconductor multi-layer structure

A light-sensitive detector ( ) according to the present invention is constituted by an array ( ) of photodetectors, a package ( ) on which the array ( ) of photodetectors is mounted, and a light-transmissible window ( ) for making detection light incident on light-receiving surfaces of the photodetectors. The package ( ) is provided with an aperture ( ) which is formed in a position adjacent to the photodetectors so that light rays substantially parallel to the detection light can pass through the aperture ( ).

Light-sensitive detector and optical demultiplexer

A semiconductor light-receiving element fabricated by using an impurity diffusion, in which a slow tail phenomenon caused in the processing of a digital signal may be suppressed. The semiconductor light-receiving element comprises a substrate including a first impurity diffused region, a first electrode provided on the bottom of the substrate, a second electrode provided on the first impurity diffused region, a second impurity diffused region provided so as to surround the first impurity diffused region with leaving a certain space therebetween, and a third electrode provided on the second impurity diffused region, wherein a reverse vias is applied to a PN junction formed by the substrate and the second impurity diffused region.

Semiconductor light-receiving element

A semiconductor light emitting diode (LED) has a pn junction, a pin junction or a similar junction formed in a polycrystalline layer with a large grain size. The LED is produced on an amorphous, ceramic, polycrystalline or monocrystalline substrate according to a crystalline growth method and light is emitted by injecting an electric current into the junction.

Semiconductor light emitting device

In the manufacture of ultrafine particles of semiconductor compound, pulse laser with high output is irradiated on an evaporation source having the same or similar composition as the above semiconductor compound to evaporate the source in a moment and the ultrafine particles of the semiconductor compound are produced utilizing the nuclear growth in inert gas. A process wherein a material for ultrafine particles is heated/evaporated by laser in inert gas and the resulting vapor is rapidly cooled by a collision with the inert gas whereby the resulting ultrafine particles of said material is sticked on a base plate and another process wherein a material for matrix is heated/evaporated by laser whereby the matrix is formed on the base plate are carried out alternately so that the ultrafine particles are homogeneously dispersed in the matrix to prepare the material wherein the ultrafine particles are dispersed.

Growing community of inventors

Tsukuba, Japan

Hisao Nagata