Mitsubishi Denki Kabushiki Kaisha

Hisao Masuda

Hitoshi Fujimoto

Shigeru Harada

Reiji Tamaki

Shuichi Osaka

Syuichi Osaka

Noriaki Uwagawa

In a semiconductor device, an impurity diffused layer serving as an active region is formed in a predetermined region of the surface of a semiconductor substrate of silicon, an underlayer insulating film is formed on the semiconductor substrate for the purpose of protecting and stabilizing the surface of the semiconductor substrate, and an interconnection electrically connected to the impurity diffused layer through a contact hole and formed on an Al-Si-Sn alloy, an Al-Si-Sb alloy or alloys having Ti added to the respective alloys, so that occurrence of an alloy pit and a silicon nodule is prevented. In addition, a completed protective film is formed on the interconnection and the underlayer insulating film and an aperture in a bonding pad region is formed in a predetermined region of the completed protective film, so that the interconnection and the bonding pad are electrically connected to each other. The proportion of silicon and other materials in the alloy are controlled to simultaneously avoid alloy pit and silicon nodule defects both at the contact hole and throughout the alloy conductor.

Semiconductor device with improved immunity to contact and conductor

With a method of and an apparatus for manufacturing semiconductor devices using copper-type lead frames with no silver plating, semiconductor devices are continuously manufactured in the following steps: first, a semiconductor pellet having electrodes on its surface is bonded, through a resin material, to a die pad on a copper-alloy lead frame which is not silver-plated. The resin material used for the bonding is then cured by heating it for 120 seconds or less in a non-oxidizing-gas atmosphere having an oxygen density of 1000 ppm or less. Then, the thickness of the oxide film which is formed on the surface of the lead frame while curing the resin material is reduced to 20 .ANG. or less by keeping the lead frame in a deoxidizing-gas atmosphere having an oxygen density of 500 ppm or less. Afterwards, wire-bonding is effected between the electrodes of the semiconductor pellet and the inner leads of the lead frame in 12 seconds or less in a deoxidizing-gas atmosphere while keeping the oxygen density around the surface of the lead frame at 3000 ppm or less.

Method of manufacturing semiconductor devices

An apparatus for assembling semiconductor devices includes a transportation line for transporting partially fabricated articles such as lead frames with a semiconductor chip mounted thereon; a working unit disposed in the transportation line for processing the partially fabricated articles by wire bonding or die bonding; an inspection unit disposed separately from the transportation line; a delivery unit for extracting a processed article from the transportation line, moving the extracted worked article to an inspection section and returning the processed article to the transportation line after checking; and a stock unit for stocking the processed articles. In the inspection section, one of the processed articles selected for sampling inspection is placed on a support and is checked with a microscope. During checking, the support and the microscope can be moved relative to each other to enable observation of the whole of the selected article.

Apparatus for assembling semiconductor devices

A semiconductor device having a bonding pad for connecting lead wires comprises a semiconductor substrate, a metal silicide film, a silicon dioxide film, a metal nitride film and an aluminum film. The silicon dioxide film has an opening in a portion corresponding to the bonding pad. The metal silicide film is formed in the portion corresponding to the bonding pad on the semiconductor substrate. The metal nitride film is formed on the metal silicide film and adhered to the metal silicide film. The aluminum film is provided as a bonding pad and formed on the metal nitride film. In a method for manufacturing the above described semiconductor device, the metal silicide film is formed on the semiconductor substrate and patterned. The silicon dioxide film is formed thereon. The opening is formed in the position corresponding to the bonding pad on the silicon dioxide film. The metal nitride film is formed in the opening. The aluminum film is formed on the metal nitride film.

Semiconductor device with bonding pad

A wire bonding apparatus which bonds electrodes and external leads of a semiconductor integrated circuit element, a bonding head, a heat block having a lead frame which supports the semiconductor integrated circuit element in a bonding position, and an ultrasonic horn fixed to the bonding head and generating ultrasonic waves to bond the electrodes and the external leads of the circuit element when the circuit element is in the bonding position, the ultrasonic horn being formed of a metallic material having a thermal expansion coefficent of not more than about 5.times.10.sup.-6 /.degree.C. so as to limit locational errors of the ultrasonic horn due to thermal expansion to a specified value.

Growing community of inventors

Hyogo, Japan

Hisao Masuda