Nec Corporation

Japan Science and Technology Agency

Riken Corporation

Hisao Kawaura

Toshitsugu Sakamoto

Hiroshi Sunamura

Noriyuki Iguchi

Toru Sano

Kazuhiro Iida

Masakazu Baba

Wataru Hattori

Hiroko Someya

Tsuyoshi Hasegawa

Masakazu Aono

Naoki Banno

Tomonobu Nakayama

Tadahiko Sugibayashi

Naoya Inoue

Katsutoshi Takahashi

Minoru Asogawa

Kazuya Terabe

Fumiyuki Nihey

Hiroo Hongo

Toshio Baba

Yukinori Ochiai

Machiko Fujita

Naohiko Sugibayashi

A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layercapable of conducting metal ions, first electrodearranged in contact with the ion conductive layer, and second electrodefor supplying metal ions to the ion conductive layer, wherein an oxygen absorption layerwhich contains a material more prone to oxidization than the second electrode is formed in contact with the second electrode.

Switching element and method for manufacturing switching element

Provided is a switching device including ion conducting parthaving an ion conductor, first electrodeformed at a first gap away from ion conducting part, second electrodeformed to be in contact with ion conducting partand third electrodeformed at a second gap away from ion conducting part. Second electrodesupplies metal ions to the ion conductor, or receives the metal ions from the ion conductor to precipitate metal corresponding to the metal ions.

Metal atom migration switching device, drive and manufacturing methods for the same, integrated circuit device and memory device using same

The switching element of the present invention is of a configuration that includes: an ion conduction layer () that includes an oxide, a first electrode () and a second electrode () that are provided in contact with the ion conduction layer () and that are connected by the precipitate of metal that is supplied from the outside or for which electrical properties change due to the dissolution of precipitated metal, and a third electrode () provided in contact with the ion conduction layer () and that can supply metal ions. The use of this configuration allows the switching voltage to be set higher than in the related art.

Switching element, reconfigurable logic integrated circuit and memory element

Provided is a switching device including ion conducting parthaving an ion conductor, first electrodeformed at a first gap away from ion conducting partsecond electrodeformed to be in contact with ion conducting partand third electrodeformed at a second gap away from ion conducting partSecond electrodesupplies metal ions to the ion conductor, or receives the metal ions from the ion conductor to precipitate metal corresponding to the metal ions.

Switching device, drive and manufacturing method for the same, integrated circuit device and memory device

The switching element of the present invention includes an ion conduction layer () capable of conducting metal ions, a first electrode () and a second electrode () provided in contact with the ion conduction layer (), and a third electrode () provided in contact with the ion conduction layer () and capable of supplying metal ions, and is of a configuration in which the area over which the first electrode () contacts the ion conduction layer () is smaller than the area over which the second electrode () contacts the ion conduction layer (). The use of this configuration decreases the leak current in the OFF state.

Switching element, switching element fabriction method, reconfigurable logic integrated circuit, and memory element

The switching element of the present invention includes: an ion conduction layer () in which metal ions can move freely; a first electrode () that contacts the ion conduction layer (); and a second electrode () that contacts the ion conduction layer (), that is formed such that the ion conduction layer () is interposed between the first electrode () and the second electrode (), and that supplies metal ions to the ion conduction layer () or that receives metal ions from the ion conduction layer () to cause precipitation of the metal that corresponds to the metal ions. An introduction path () composed of the metal and of a prescribed width is further provided on the ion conduction layer () for electrically connecting the first electrode () and the second electrode (). The application of voltage to the first electrode () relative to the second electrode () then causes an electrochemical reaction between the introduction path () and the second electrode () whereby the electrical characteristics are switched.

Switching element, switching element drive method and fabrication method, reconfigurable logic integrated circuit, and memory element

The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.

Electric device using solid electrolyte

A switching element has an ion conductor capable of conducting metal ions for use in an electrochemical reaction therein, a first electrode and a second electrode which are disposed in contact with said ion conductor and spaced a predetermined distance from each other, and a third electrode disposed in contact with the ion conductor. When a voltage for causing the switching element to transit to an on state is applied to the third electrode, metal is precipitated between the first electrode and the second electrode by metal ions, electrically interconnecting the first electrode and the second electrode. When a voltage for causing the switching element to transit to an off state is applied to the third electrode, the precipitated metal is dissolved to electrically disconnect the first electrode and the second electrode from each other.

Switching element method of driving switching element rewritable logic integrated circuit and memory

A channel () formed in a substrate () branches into channels () at a branch point (). On this branch point, obstacles () having a columnar structure are aligned at certain intervals.

Particle manipulation unit, chip and detection device having the same, mounted thereon, and methods of separating, capturing and detecting proteins

The switching element of the present invention is of a configuration that includes: a first electrode () and a second electrode () provided separated by a prescribed distance; a solid electrolyte layer () provided in contact with the first electrode () and the second electrode (); a third electrode () that can supply metal ions and that is provided in contact with the solid electrolyte layer (); and a metal diffusion prevention film () that covers points of the surface of the solid electrolyte layer () that are not in contact with the first electrode (), the second electrode () or the third electrode (). This configuration prevents the adverse effect of metal ions upon other elements.

Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit

A channel formed on a chip is opened without contaminating contents of the channel. Channels () and () provided on a substrate () are covered by pressing a lid () composed of a resin layer () and a plate-like lid () to a surface of the substrate (). A fixing device has a retainer plate (), which retains the plate-like lid () of a chip (), a board () on which the substrate () is placed, and a screw (). When covering the channels () and (), the screw () is fastened and the lid () is pressed to the substrate () to be fixed. And, when opening an upper portion of the channels () and (), the screw () is turned upward and a pressure is released, and the lid () is removed from the upper potion of the substrate ().

Chip, device using the chip, and method of using the same

A switching element is of a configuration that includes: an ion conduction layer () for conducting metal ions, a first electrode () and a second electrode () provided in contact with the ion conduction layer, a third electrode () that can supply metal ions to the ion conduction layer, and a diffusion prevention layer () provided between the ion conduction layer () and the third electrode () for preventing the diffusion of metal ions from the third electrode () to the ion conduction layer (). By adopting this configuration, the set state of a switch can be maintained with greater stability.

Switching element and reconfigurable logic integrated circuit

The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same. A solid electrolyte switching device (') comprises a substrate () in which surface is coated with an insulation layer, a first interconnection layer () set on said substrate (), an ion supplying layer () set on said first interconnection layer (), a solid electrolyte layer () set on said ion supplying layer (), an interlevel insulating layer () having a via hole set to cover said first interconnection layer (), said ion supplying layer (), and said solid electrolyte layer (), a counter electrode layer () set to contact said solid electrolyte layer () through the via hole of said interlevel insulating layer (), and a second interconnection layer () set to cover said counter electrode layer (). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer () and the counter electrode layer (), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA () makes it possible to provide re-programmable and fast operation FPGA (). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device

After a sample is previously separated into plural components in a channel formed in a microchip (), the channel is irradiated along a separation direction with a laser beam from a laser oscillator () to sequentially ionize each fraction separated in the channel. The ionized fraction is detected by a mass spectrometry unit () and analyzed by an analytical result analyzing unit (). The analytical result is stored in a memory () while associated with position information in a driver control unit () and information on laser beam irradiation condition in a laser control unit (), and the analytical result is imaged by an imaging unit (). The imaged analytical result is displayed on a display ().

Mass spectrometric system and mass spectrometry

There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.

Growing community of inventors

Tokyo, Japan

Hisao Kawaura