Sumitomo Electric Industries, Limited

Sumitomo Wiring Systems, Limited

Autonetworks Technologies, Limited

Other

Honda Giken Kogyo Kabushiki Kaisha

Japan Science and Technology Corporation

Toyo Aluminium Kabushiki Kaisha

Sumitomo Electric Sintered Alloy, Ltd.

Hisao Hattori

Hideo Itozaki

Toshihiko Kaji

Kenjiro Higaki

Tatsuoki Nagaishi

Manabu Hashikura

Tatsuya Sumida

Keizo Harada

Yoshinobu Takeda

Yoshishige Takano

Shosaku Yamanaka

Tomohiko Ihara

Kyohei Morita

Hiroshi Yoshino

Kazuhide Kitagawa

Naoji Fujimori

Shuji Yazu

Saburo Tanaka

Tetsuji Jodai

Hiroyuki Horimura

Jun Kusui

Takatoshi Takikawa

Kyo Takahashi

Kosuke Doi

Koji Yamada

Kazuo Fujii

Terukazu Tokuoka

Kazuhiko Yokoe

An electricity storage unit includes: an electricity storage device; a circuit portion on which an electronic component is mounted; a heat dissipation member that dissipates heat from the circuit portion; and a holding member that holds the electricity storage device in a state where the electricity storage device, the circuit portion, and the heat dissipation member are stacked, wherein the holding member is provided with a supporting portion that supports the electricity storage device and abuts against the heat dissipation member.

Electricity storage unit

The present invention provides an electricity storage unit in which the influence of noise from a circuit portion can be suppressed, and the circuit portion and a power storage element can be consolidated. The electricity storage unit includes a circuit portion on which an electronic component is mounted, power storage elements, and a holding member that holds the power storage elements. The holding member includes an electrically conductive shield wall portion between the circuit portion and the power storage elements, and the shield wall portion shields noise generated by the circuit portion. The electricity storage unit may further have an electrically conductive heat dissipation member that dissipates heat from the circuit portion.

There is provided a vehicle power supply apparatus which includes a battery charged by a generator and supplies, to a plurality of loads, electric power discharged by the battery and electric power generated by the generator. The apparatus includes an electric double layer capacitor connected in parallel to the battery, and a connection circuit for switching connection and disconnection between respective homopolar terminals of the battery and the electric double layer capacitor. The connection circuit is connected to charge the electric double layer capacitor based on a potential difference between terminals of the connection circuit. The plurality of loads include loads each of which generates a rush current of a predetermined value or more and each of which is fed electric power outputted by the electric double layer capacitor.

Vehicle power supply apparatus

A heat-resistant, creep-resistant aluminum alloy according to the present invention contains at least 10 mass % and not more than 30 mass % of silicon, at least 3 mass % and not more than 10 mass % of at least either iron or nickel in total, at least 1 mass % and not more than 6 mass % of at least one rare earth element in total and at least 1 mass % and not more than 3 mass % of zirconium with the rest substantially consisting of aluminum, while the mean crystal grain size of silicon is not more than 2 &#x3bc;m, the mean grain size of compounds other than silicon is not more than 1 &#x3bc;m, and the mean crystal grain size of an aluminum matrix is at least 0.2 &#x3bc;m and not more than 2 &#x3bc;m. Thus, an aluminum alloy excellent in heat resistance and creep resistance is obtained.

Heat-resistant, creep-resistant aluminum alloy and billet thereof as well as methods of preparing the same

The invention offers an aluminum alloy that not only has high hardness accompanied by balanced ductility but also has high toughness and superior processability. The invention also offers a method for manufacturing an aluminum-alloy member that not only has high hardness accompanied by balanced ductility but also has high toughness and superior processability. The aluminum alloy comprises (1) not less than 0.1 wt. % and not more than 8 wt. % Constituent A comprising one or more kinds of elements selected from the group consisting of titanium, vanadium, hafnium, and zirconium, (2) not less than 0.1 wt. % and not more than 20 wt. % Constituent B comprising one or more kinds of elements selected from the group consisting of lanthanum, cerium, praseodymium, neodymium, mischmetal, calcium, strontium, and barium, and (3) not less than 0.1 wt. % and not more than 20 wt. % Constituent C comprising one or more kinds of elements selected from the group consisting of magnesium and lithium.

Aluminum alloy and method for manufacturing aluminum-alloy member

A tough and heat resisting aluminum alloy comprising aluminum, a transition metal element and a rare earth element, and having a modulated structure which comprises an aluminum matrix and an intermetallic compound precipitated to form a network in the aluminum matrix. Also disclosed in a process for producing the aluminum alloy which comprises the steps of: rapid quenching and solidifying a liquid aluminum alloy at a quenching rate of 10,to 10,K/sec to obtain an aluminum-based supersaturated solid solution; and heat treating the quenched aluminum-based supersaturated solid solution at a heat treating temperature of 473 K or higher, the temperature increasing rate to the heat treating temperature being 1.5 K/sec or higher.

Tough and heat resisting aluminum alloy

High strength high-toughness aluminum alloy and method of preparing the

A raw material for powder metallurgy contains at least 0.5 vol % and at most 10 vol % of alumina powder of which the sieve fraction with a sieve opening of 30 .mu.m is at most 0.1 wt %, and a remaining part of aluminum alloy powder. The moisture content of the alumina powder is at most 0.15 wt. % with respect to the alumina powder. Agglomeration of particles is thereby minimized or avoided. Highly reliable raw material for powder metallurgy having superior fatigue strength, impact resistance and wear resistance can be obtained. A method of preparing such a mixed powder raw material involves air classifying the powder materials, dry ball mixing the materials, and then annealing the mixed powder.

Raw material for powder metallurgy and manufacturing method thereof

A method of forming a multilayered wiring board having a multilayered wiring structure includes the steps of forming a first mesh wiring layer having a plurality of holes therein, and forming a second wiring layer having a plurality of wirings undulating up and down so as to descend into the holes formed in the first wiring layer. In another method, the first wiring layer is formed with a plurality of protrusions and the wirings of the second wiring layer are formed between the protrusions. In the wiring boards formed according to the methods of the present invention, crosstalk between the wirings is suppressed.

Method of manufacturing a multilayered wiring board

This multilayered wiring board having a multilayered wiring structure includes a first mesh wiring layer having a plurality of holes therein, and a second wiring layer having a plurality of wirings. The wirings of the second wiring layer undulate up and down so as to descend towards the holes formed in the first wiring layer. In another arrangement, the first wiring layer has a plurality of protrusions protruding toward the second wiring layer at locations between adjacent ones of the wirings of the second wiring layer. In these wiring boards, crosstalk between the wirings is suppressed.

Multilayered wiring board with wiring configurations to reduce crosstalk

In a process for preparing a thin film of a Bi-Sr-Ca-Cu-O based oxide superconductor by a laser ablation method in which a target is irradiated with a pulsed laser beam to grow a thin film on a substrate positioned to face the target, the improvement wherein the pulse rate of the pulsed laser beam is adjusted to 0.01-10 Hz and the application of the laser beam is interrupted at each time a superconducting thin oxide film is grown to a thickness equivalent to one half the unit cell or one unit cell of a Bi-Sr-Ca-Cu-O based oxide superconductor, whereby a thin film of the oxide superconductor is grown at an average growth rate of no more than 0.5 .ANG./sec.

Process for preparing a superconducting thin oxide film

A process for preparing a single crystal thin film made of oxide superconductor of Bi, Sr, Ca, and Cu on a substrate by a sputtering method using a target made of a sintered oxide of Bi, Sr, Ca, and Cu and having its c-axis oriented in parallel with the surface of the substrate. The sputtering is effected by 90.degree. off-axis magnetron sputtering at a substrate temperature between 500.degree. C. and 750.degree. C. at a gas pressure between 0.001 Torr and 1 Torr.

Process for preparing a thin film of bi-type oxide superconductor

A laser ablation process for preparing superconducting oxide thin films such as YBa.sub.2 Cu.sub.3 O.sub.7-x comprises ablating a target surface with pulsed laser beam to cause deposition of target molecules on a substrate. The incident laser beam on the target surface has an energy of 5 to 10 J/cm.sup.2 per pulse.

Process for preparing superconducting oxide thin films

A superconducting material composed mainly of compound oxide having a composition represented by the general formula:

Method for preparing superconducting thin film

A process of preparing a superconducting thin oxide film includes irradiating a target containing Bi, Sr, Ca and Cu with a laser beam to prepare a thin film of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x oxide or a thin film of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.y oxide on a substrate. The process is characterized in that the target containing Bi, Sr, Ca and Cu in an atomic ratio of 2:2:2:3 is positioned to face the substrate, and the laser beam is irradiated to the target in an atmosphere having an oxygen partial pressure of 0.01-1 Torr while the temperature of the substrate is maintained in a given temperature range suitable for growing the respective superconducting thin oxide films.

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Itami, Japan

Hisao Hattori