Sanyo Electric Co., Ltd.

Hisao Haku

Yukinori Kuwano

Takeo Fukatsu

Kazuyuki Goto

Kaneo Watanabe

Yukio Nakashima

Tsugufumi Matsuoka

Koji Minami

Michitoshi Ohnishi

Kenichi Shibata

Kiyoshi Yoneda

Haruhisa Hashimoto

Masayuki Tanaka

Masaru Takeuchi

Tatsuro Usuki

Gaku Harada

First, a plurality of organic EL elements are formed on a substrate. The electron injection electrode of an organic EL element has a stacked layer structure of a metal thin film and a metal oxide film. A sealing agent is provided on the upper portion and outer periphery of the plurality of organic EL elements on the substrate, so as to surround the entire perimeter of the plurality of organic EL elements. A sealing plate is bonded to the upper face side of the sealing agent with a color filter sandwiched therebetween. As the sealing agent, a resin adhesive is used from which a solution extracted in accordance with the SEMI standard G29-1296 after curing has a pH of not less than four nor more than ten. It is preferable that the resin adhesive has a light transmittance of 70% or more on average in the wavelength range of 450 nm to 800 nm, with the variation range of the light transmittance in the wavelength range of 450 nm to 800 nm being not more than &#xb1;10% for the average light transmittance.

Organic electroluminescent device having a high pH adhesive layer

A large-sized organic EL display unit is formed by bonding four small display panels on junction surfaces so that the pitch between emission parts adjacent to each other over the small display panels is equal to the pitch between the emission parts in the small display panels, so that the junction between the adjacent ones of the small electroluminescence display panels is inconspicuous.

Electroluminescence display unit and method of fabricating the same

A photovoltaic device has at least one set of amorphous semiconductor layers forming a p-i-n junction structure, wherein at least one of the semiconductor layers having a given thickness, is doped with nitrogen and oxygen to a depth forming at least part of said given thickness. Such a photovoltaic device is fabricated by depositing on a substrate at least one set of amorphous semiconductor layers which form a p-i-n junction structure, and by doping at least one of the layers with nitrogen and oxygen to a depth forming at least part of the thickness of the doped layer.

Photovoltaic device with O and N doping

An electrophotographic photosensitive member comprising (a) a substrate made of an electrically conductive material, (b) a silicide layer formed on the surface of the substrate, and (c) a photoconductive layer superposed on the silicide layer being composed chiefly of amorphous silicon; which is usable for copying machines and intelligent copying machine.

Electrophotographic member with silicide interlayer

A method for producing a semiconductor device uses trimethyl boron (B(CH.sub.3).sub.3) of triethyl boron (B(C.sub.2 H.sub.5).sub.3) or a mixture thereof as a p-type dopant and/or a band gap widening source material gas in a process for forming a p-type amorphous semiconductor film. Accordingly, the quantity and the number of different gases which are used can be reduced and also the photoconductivity and dark conductivity can be improved, whereby a semiconductor device suitable for photovoltaic cells, photo sensors and the like using a p-type amorphous semiconductor film having a wide optical band gap can be produced.

Method for producing semiconductor device with p-type amorphous silicon

A method for fabricating a periodically multilayered film having a plurality of amorphous thin layers of different kinds stacked periodically is performed by forming at least one kind of the layers in the stack by a photo CVD method, whereby a more definite periodicity in the composition of the lattice and fewer defects are achieved.

Method for fabricating periodically multilayered film

A photovoltaic device has a semiconductive multilayer of one conductivity type, which includes a plurality of amorphous thin constituent layers of different kinds stacked periodically to form at least one quantum well. A semiconductor layer of an i-type, which is contiguous to the multilayer so that light may be applied to the i-type layer through the multilayer.

Photovoltaic device

An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photosensitivity and charge retaining ability at the surface layer, the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing carbon forming an insulating material as combined with the amorphous silicon, and the content of the carbon based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.

Electrophotographic photosensitive member

An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.

Electrophotographic photosensitive member and method for making such a

An electrophotographic photosensitive member comprising a photoconductive layer formed over a substrate and a surface layer formed over the photoconductive layer and having a high photoconductivity and charge retaining ability at the surface layer, in which the photoconductive layer and the surface layer being composed chiefly of amorphous silicon, the surface layer being a layer containing a substance forming an insulating material as combined with the amorphous silicon, and the content of the substance based on the silicon atoms being low toward the substrate and high toward the surface of the surface layer; which is usable for copying machines and intelligent copying machines.

Growing community of inventors

Neyagawa, Japan

Hisao Haku