Denso Corporation

Hisanori Yokura

Tetsuo Fujii

Kazuhiko Sugiura

Takashi Katsumata

Toshikazu Itakura

Masaya Tanaka

Akitoshi Yamanaka

Eishi Kawasaki

Takamoto Furuichi

Toshifumi Yano

Yutaka Hayakawa

Hiroaki Tanaka

Takahiko Yoshida

Hirofumi Higuchi

Minoru Murata

Yoshifumi Okabe

Takeshi Fukazawa

Yoshihiko Isobe

Yoshihiko Ozeki

Kenichi Yokoyama

Shoji Ozoe

Kazuyuki Kakuta

Shigenori Suzuki

Takahiro Kawano

In a physical quantity sensor, a first substrate has a recess depressed from a second surface to provide a thin film section adjacent to a first surface, and a second substrate has a first surface bonded to the first surface of the first substrate, and has a hollow depressed from the first surface and facing the recess. The recess and the hollow have such sizes that a projected line defined by projecting an end of a bottom surface in the recess to the first surface of the first substrate surrounds an open end of the hollow. When the thin film section is displaced toward the hollow, a maximum tensile stress is generated at a position on a rear surface of the thin film section intersecting an extended line along a normal direction to the first surface of the first substrate and passing through the open end of the hollow.

Physical quantity sensor

A semiconductor device includes: a first substrate having connectors at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connectors; through-electrodes respectively arranged at through-holes and electrically connected with the connectors; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.

Semiconductor device capable of suppressing cracks of through-hole protective film and short circuit of adjacent through-electrodes

A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1&#xb0; C./sec or smaller until a temperature of the substrate increases to 700&#xb0; C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.

Manufacturing method of semiconductor device

A dynamic quantity sensor includes a first substrate and a second substrate. The first substrate has one surface, another surface opposite to the one surface, and a depressed portion defining a thin portion. The second substrate has one surface attached to the first substrate and a recessed portion disposed corresponding to the depressed portion. At least a part of a first projection line obtained by projecting the recessed portion is disposed outside of a second projection line obtained by projecting a boundary line between side walls of the depressed portion and the thin portion. The thin portion disposed inside the periphery of the recessed portion provides a film portion which is displaceable corresponding to a physical quantity applied to the film portion, and a region sandwiched between the film portion and a portion connected to the periphery of the recessed portion provides a stress release region.

Dynamic quantity sensor

A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.

Magnetic sensor

In a method for producing a semiconductor device having a through electrode structure, a masking material is formed so as to bridge over a through hole formed in a second semiconductor substrate, and a hole is formed in the masking material at a position corresponding to the through hole. A contact hole is formed in an insulating film via this hole. In such a method, even if there is a large level difference from the surface of the second semiconductor substrate to the bottom of the through hole, only the masking material bridged over the through hole is exposed by photolithography. Therefore, photolithography for a large level difference is not necessary. As a result, the hole can be formed in the masking material successfully, and the contact hole can be formed successively by an anisotropic dry etching via this hole, even in the case where etching for a large level difference is performed.

Semiconductor device producing method

A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.

Semiconductor physical quantity sensor and method for manufacturing the same

A magnetic sensor is provided, including: a substrate; a plurality of magneto resistance element portions, disposed above the substrate, each including: a free magnetic layer having a magnetization direction changeable by an external magnetic field; and a pin magnetic layer having a fixed magnetization direction; and a plurality of heater portions corresponding to the magneto resistance element portions, respectively, and configured to heat a corresponding pin magnetic layer, wherein the magnetization direction of the pin magnetic layer of one magneto resistance element portion is different from the magnetization direction of the pin magnetic layer of another magneto resistance element portion on a plane parallel to a surface of the substrate, when the external magnetic field is applied to each of the magneto resistance element portions, the magnetic sensor detects a physical amount based on a change in a resistance of each of the magneto resistance element portions.

Magnetic sensor with a plurality of heater portions to fix the direction of magnetization of a pinned magnetic layer

A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.

Method of making semiconductor device

A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.

Semiconductor device

A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.

Semiconductor dynamic quantity sensor and method of manufacturing the same

A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

Semiconductor device and method for manufacturing the same

A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.

Semiconductor dynamic quantity sensor and method of producing the same

A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

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Obu, Japan

Hisanori Yokura