Ricoh Company, Ltd.

Tohoku University

Mitsubishi Chemical Corporation

Tokuyama Corporation

Hisanori Yamane

Seiji Sarayama

Masahiko Shimada

Hirokazu Iwata

Masato Aoki

Masafumi Kumano

Takashi Araki

Akira Yoshikawa

Kentaro Fukuda

Takayuki Yanagida

Noriaki Kawaguchi

Fumitaka Yoshimura

Yui Yokota

Yutaka Fujimoto

Haruhiko Morito

Tetsuya Kawano

A phosphor comprising a crystalline phase having a composition expressed by Formula [1] below, a crystal system of the phosphor being a hexagonal crystal system,MAAlSiN&#x2003;&#x2003;[1]

Phosphor, light-emitting device, illumination device and image display device

A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.

Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate

Provided are: a novel bonds useful as a highly-functional material; and a novel production method for a polycrystalline sintered product of a bonds, of which the energy cost is low, which does not require a sintering promoter, which enables the product to be worked into complicated forms and which enables a development to a polynary boride. Provided are a boride having a composition Na&#x2014;Si&#x2014;B, and a polycrystalline reaction-sintered product thereof. A mixed compact of boron and an element, M (M means Si and/or C) is heated along with metal sodium to give a polycrystalline reaction-sintered product.

Boride having chemical composition Na&#x2014;Si&#x2014;B, and polycrystalline reaction sintered product of boride and process for production thereof

Provided is a scintillator for neutrons that allows the detection of neutrons with superb sensitivity and that is little affected by background noise derived from &#x3b3;-rays, and a neutron detector that uses the neutron scintillator. The scintillator for neutrons comprises borate that contains at least Mg and a divalent transition element.

Scintillator for neutrons and neutron detector

A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Crystal growth apparatus

A method is provided for producing a single crystal body of a group III nitride, comprising the steps of forming a molten flux of a volatile metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel, and wherein a seed crystal is disposed in the reaction vessel.

Production of a GaN bulk crystal substrate and a semiconductor device formed thereon

A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.

Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device

A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.

Methods of growing a group III nitride crystal

Crystal growth method

A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.

Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device

A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).

Growing community of inventors

Miyagi, Japan

Hisanori Yamane