Toyoda Gosei Co., Ltd.

Meijo University

Hisanori Ishiguro

Tetsuya Takeuchi

Yoshiki Saito

Kengo Nagata

Shinya Boyama

Shinichi Matsui

Hiroshi Miwa

A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a Natmosphere at not less than 650° C. or in a N+Oatmosphere at not less than 500° C.

Method for manufacturing light-emitting element and method for removing hydrogen from light-emitting element

Growing community of inventors

Aichi-ken, Japan

Hisanori Ishiguro