Mitsui Chemicals, Inc.

National Institute of Advanced Industrial Science and Technology

Tazmo Co., Ltd.

Hisako Ishikawa

Kazuo Kohmura

Yosuke Ono

Atsushi Okubo

Daiki Taneichi

Tsuneaki Biyajima

Yasuyuki Sato

Toshiaki Hirota

Kazuo Yagi

Takeo Yamada

Takashi Kozeki

Akifumi Kagayama

Atsuko Sekiguchi

Yousuke Ono

Ying Zhou

Toshinori Matsuda

Yuichi Kato

Ryohei Ogawa

A pellicle film for photolithography including a carbon nanotube film, in which the carbon nanotube film contains carbon nanotubes; the carbon nanotube film transmits 80% or more of EUV light at a wavelength of 13.5 nm; the carbon nanotube film has a thickness from 1 nm to 50 nm; the carbon nanotube film is deposited on a silicon substrate, in which the 3σ of the reflectance is 15% or less when the reflectance of the deposited carbon nanotube film is measured using a reflectance spectrophotometer-based film thickness meter under the following conditions: the diameter of measurement spots, 20 μm; the reference measurement wavelength, 285 nm; the number of measurement spots, 121 spots; the distance between the centers of adjacent measurement spots, 40 μm.

Pellicle film for photolithography, pellicle, photolithography mask, photolithography system, and method of producing pellicle film for photolithography

To provide a pellicle in which outgas from an adhesive layer is suppressed. The pellicle includes a pellicle film, a support frame for supporting the pellicle film, a protrusion part arranged in the support frame, a first adhesive layer arranged on the protrusion part; and an inorganic material layer arranged at a position closer to the pellicle film than the first adhesive layer. The inorganic material layer may include a first inorganic material layer arranged at a first side surface of the first adhesive layer, the first side surface of the first adhesive layer intersecting the pellicle film, and arranged at a position closer to the pellicle film.

Pellicle, exposure master, exposure device and method for manufacturing semiconductor device

A pellicle for EUV exposure that has a high transmittance to EUV light, causes little outgassing, and is not much contaminated, and a method for manufacturing the same are provided. A pellicle () includes a pellicle film (); a support frame (); and a first adhesive layer () provided at an end of the support frame, the end being opposite to an end on which the pellicle film is extended. The pellicle further includes an inorganic layer () on a side surface of the first adhesive layer, the side surface extending in a direction crossing a surface of the pellicle film, and the pellicle film being extended on the side surface. The inorganic layer has a mass absorption coefficient (&#x3bc;) in the range of 5&#xd7;10cm/g to 2&#xd7;10cm2/g.

Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method

A method for producing a pellicle according to the one embodiment of the present invention produces a pellicle including a pellicle film and a pellicle frame supporting an outer peripheral portion of the pellicle film. The method includes forming the pellicle film on a substrate, and bonding a pressure-sensitive adhesive sheet, that is elastic and has a pressure-sensitive adhesive force thereof decreased upon receipt of external stimulation, to each of two surfaces of the substrate; making a notch inside a part of the substrate, the part having the pressure-sensitive adhesive sheets bonded thereto; separating a substrate outer peripheral portion outer to the notch of the substrate, in a state where the pressure-sensitive adhesive sheets are bonded to the substrate, to form a pellicle frame; and stimulating the pressure-sensitive adhesive sheets to peel off the pressure-sensitive adhesive sheets.

Pellicle manufacturing method and method for manufacturing photomask with pellicle

Provided are a pellicle for extreme ultraviolet light lithography, a method for producing the same, and an exposure method. A pellicle according to the present invention includes a first frame having a pellicle film located thereon; a second frame supporting the first frame; a through-hole running through the first frame; and a filter covering the through-hole on the side of a surface of the first frame on which the pellicle film is located. The through-hole may run through the pellicle film; and the filter may be located on the pellicle film. The filter may be located, adjacent to the pellicle film, on the first frame.

Pellicle, pellicle production method and exposure method using pellicle

Provided are a pellicle for extreme ultraviolet light lithography, a production method thereof, and an exposure method. A pellicle according to the present invention includes a first frame having a pellicle film located thereon; a second frame including a thick portion including a first surface carrying a surface of the first frame opposite to a surface on which the pellicle film is located, and also including a second surface connected with the first surface and carrying a side surface of the first frame, the second frame enclosing the pellicle film and the first frame; a through-hole provided in the thick portion of the second frame; and a filter located on an outer side surface of the second frame and covering the through-hole, the outer side surface crossing the surface of the first frame on which the pellicle film is located.

Pellicle, production method thereof, exposure method

Disclosed is a film composed of a resin having a thiourethane bond, wherein the molar ratio (S/N) of sulfur to nitrogen contained in the resin is equal to or more than 0.8 and less than 3. A method for manufacturing a film is also disclosed. The disclosed film is excellent in a balance among high refractive index, low birefringence and light transmittance, and further excellent in a balance of mechanical characteristics such as toughness, hardness and dimensional stability, so that effects of deformation and the like during processing are very small, and the film is further excellent in solvent resistance as well.

Film containing a resin having a thiourethane bond and uses thereof

Growing community of inventors

Ichihara, Japan

Hisako Ishikawa