Seiko Epson Corporation

Hisaki Kurashina

Hidenori Kawata

Yuichi Shimizu

Kenichi Takahara

Yasuji Yamasaki

Yoshifumi Tsunekawa

An electro-optical device includes: data lines extending in a first direction above a substrate; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin-film transistors arrayed so as to correspond to intersection regions of the data lines and the scanning lines; capacitors formed at a layer higher than the semiconductor layer of the thin-film transistors and at a layer lower than the pixel electrodes, and electrically connected to pixel potential; and upper light shielding film positioned between the data lines and the pixel electrodes; the upper light shielding film defining at least the corners of pixel opening regions; and the scanning lines, the data lines, and the capacitors, being formed in the light shielded region.

Electro-optical device and electronic apparatus

An electro-optical device includes, above a substrate: a data line extending in a first direction; a scanning line extending in a second direction and intersecting the data line; pixel electrode and thin film transistor disposed so as to correspond to intersection regions of the data line and the scanning line; a storage capacitor electrically connected to the thin film transistor and the pixel electrode; a shielding layer disposed between the data line and the pixel electrode; an interlayer insulating film disposed as the base of the pixel electrode; and a contact hole formed in the interlayer insulating film, to electrically connect the thin film transistor to the pixel electrode. Further, the entire region inside the contact hole is filled with a filler.

Electro-optical device and electronic apparatus having coating member coating an inner side wall of a contact hole

An electro-optical device including, above a substrate: data lines extending in a first direction, scanning lines extending in a second direction which intersects the data lines, pixel electrodes and thin film transistors provided so as to correspond to intersection regions of the data lines and the scanning lines, and storage capacitors electrically connected to the thin film transistors and the pixel electrodes. Dielectric films which constitute the storage capacitors are made of a plurality of layers including different materials and one of the plurality of the layers is made of a material having a higher dielectric constant than those of the other layers.

LCD with relay layer connecting pixel electrode with storage capacitor that also covers the storage capacitor

A plurality of film formation layers where film formation patterns are formed, respectively, interlayer films which are formed between the plurality of film formation layers, respectively, a plurality of sub-interlayer-film wiring patterns, which are formed in film formation layers beneath the planarized interlayer films of the interlayer films, a plurality of contact holes formed in the planarized interlayer films in order to connect the plurality of sub-interlayer-film wiring patterns and the film formation patterns of layers above the planarized interlayer films, and one or more dummy patterns which are formed on a plurality of positions under the plurality of contact holes and which are formed in one or more film formation layers under the plurality of sub-interlayer-film wiring patterns, respectively so as to control the positions of the surfaces of the plurality of sub-interlayer-film wiring patterns.

Substrate having a planarization layer and method of manufacture therefor, substrate for electro-optical device, electro-optical device, and electronic apparatus

A plurality of film formation layers on which respective film formation patterns are formed; interlayer films formed among the plurality of film formation layers; test element patterns formed in test element formation regions with the same material as that of each film formation pattern of at least one film formation layer among the plurality of film formation layers; openings formed in the test element formation regions of an interlayer film of a planarized uppermost layer, thereby exposing a pair of pads connected to the test element patterns; and dummy patterns formed below the corresponding one of the pair of pads with the same material as that of each of the film formation patterns of predetermined film formation layers among the plurality of film formation layers, thereby defining the vertical locations of the pads and the contact holes, etc. in the test element formation regions.

Test-element-provided substrate, method of manufacturing the same, substrate for electro-optical device, electro-optical device, and electronic apparatus

An electro-optical device includes above a substrate: data lines extending in a first direction; scanning lines extending in a second direction in such a manner that the scanning lines and data lines cross each other; pixel electrodes and thin-film transistors each placed in corresponding regions corresponding to intersections of the scanning lines and data lines; storage capacitors disposed below the data lines and each electrically connected to the corresponding thin-film transistors and pixel electrodes; a capacitor line disposed above the data lines; first junction electrodes, formed using the same film used to form the data lines, each electrically connecting the corresponding pixel potential capacitor electrodes of the storage capacitors and pixel electrodes; and second junction electrodes, formed using the same film as that to form the data lines, each electrically connecting the corresponding constant potential capacitor electrodes of the storage capacitors and the capacitor line. The data lines, first junction electrodes, and second junction electrodes each including a nitride film.

Electro-optical device providing enhanced TFT life

The present invention provides electro-optical device that can include, on a TFT array substrate, pixel electrodes, TFTs for switching the respective pixel electrodes, and scanning lines and data lines respectively connected to the TFTs. By laminating a capacitive electrode and a capacitive line with an interlayer insulator interposed therebetween, a storage capacitor can be formed in a region overlapping the scanning line in a plan view. This arrangement increases a pixel aperture ratio and the capacitance of the storage capacitor, thereby reducing cross-talk and ghost and presenting a high-quality image display.

Growing community of inventors

Matsumoto, Japan

Hisaki Kurashina