Toyoda Gosei Co., Ltd.

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Nagoya University

Kabushiki Kaisha Toyota Chuo Kenkyusho

Research Development Corporation of Japan

Japan Science and Technology Agency

Hisaki Kato

Katsuhide Manabe

Norikatsu Koide

Michinari Sassa

Shiro Yamazaki

Isamu Akasaki

Akira Mabuchi

Masayoshi Koike

Masafumi Hashimoto

Naoki Shibata

Makoto Asai

Shinya Asami

Hiroshi Watanabe

Hiroshi Amano

Toshiyasu Ito

Mamoru Kato

Kazumasa Hiramatsu

Kanae Matsumura

Takaaki Mori

Jun Minoura

Kazuhiro Sakai

Masahiro Kotaki

Junichi Shimada

Katsuaki Okabayashi

Naoki Yoshimura

Masafumi Hasimoto

Shigeyuki Takahahi

A light-emitting semiconductor device () consecutively includes a sapphire substrate (), an AlN buffer layer (), a silicon (Si) doped GaN n-layer () of high carrier (n-type) concentration, a Si-doped (AlGa)InN n-layer () of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (AlGa)InN emission layer (), and a Mg-doped (AlGa)InN p-layer (). The AlN layer () has a 500 &#x212b; thickness. The GaN n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The emission layer () has about a 0.5 &#x3bc;m thickness. The p-layerhas about a 1.0 &#x3bc;m thickness and a 2&#xd7;10/cmhole concentration. Nickel electrodes () are connected to the p-layer () and n-layer (), respectively. A groove () electrically insulates the electrodes (). The composition ratio of Al, Ga, and In in each of the layers () is selected to meet the lattice constant of GaN in the n-layer (). The LED () is designed to improve luminous intensity and to obtain purer blue color.

Light-emitting semiconductor device using group III nitrogen compound

A light-emitting semiconductor device () consecutively includes a sapphire substrate (), an AlN buffer layer (), a silicon (Si) doped GaN n-layer () of high carrier (n-type) concentration, a Si-doped (AlGa)InN n-layer () of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (AlGa)InN emission layer (), and a Mg-doped (AlGa)InN p-layer (). The AlN layer () has a 500 &#x212b; thickness. The GaN n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The n-layer () has about a 2.0 &#x3bc;m thickness and a 2&#xd7;10/cmelectron concentration. The emission layer () has about a 0.5 &#x3bc;m thickness. The p-layer 6 has about a 1.0 &#x3bc;m thickness and a 2&#xd7;10/cmhole concentration. Nickel electrodes () are connected to the p-layer () and n-layer (), respectively. A groove () electrically insulates the electrodes (). The composition ratio of Al, Ga, and In in each of the layers () is selected to meet the lattice constant of GaN in the n-layer (). The LED () is designed to improve luminous intensity and to obtain purer blue color.

A barrier layer made of AlGaN (0&#x3c;x&#x2266;0.18) is formed in a light-emitting semiconductor device using gallium nitride compound having a multi quantum-well (MQW) structure. By controlling a composition ratio x of aluminum (Al) or thickness of the barrier layer, luminous intensity of the device is improved. An n-cladding layer made of AlGaN (0&#x3c;x&#x2266;0.06) is formed in a light-emitting semiconductor device using gallium nitride compound. By controlling a composition ratio x of aluminum or thickness of the n-cladding layer, luminous intensity of the device is improved. A p-type layer and an n-type layer are formed in a light-emitting semiconductor device using gallium nitride compound having a double-hetero junction structure. By controlling a ratio of a hole concentration of the p-type layer and an electron concentration of the n-type layer approximates to 1, luminous intensity of the device is improved.

Light-emitting semiconductor device using gallium nitride compound semiconductor

Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlGaN) in which the n-layer of n-type gallium nitride compound semiconductor (AlGaN) is of double-layer structure including an n-layer of low carrier concentration and an n-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlGaN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlGaN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

Method for manufacturing a gallium nitride group compound semiconductor

A layer comprising silicon oxide (SiO) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x+y&#x2266;1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x+y&#x2266;1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiOlayer, and grows epitaxially on the SiOlayer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.

Methods and devices using group III nitride compound semiconductor

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al Ga N) in which the n-layer of n-type gallium nitride compound semiconductor (Al Ga N) is of double-layer structure including an n-layer of low carrier concentration and an n -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al Ga N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al Ga N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

An alicyclic epoxy resin is used as a material for forming a member for sealing a Group III nitride compound semiconductor light-emitting device.

Light-emitting system with alicyclic epoxy sealing member

A layer comprising silicon oxide (SiO ) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the &lsqb;1-10&rsqb; axis direction perpendicular to the &lsqb;110&rsqb; axis direction. Then a group III nitride compound semiconductor represented by a general formula Al Ga In N (0&lE;x&lE;1, 0&lE;y&lE;1, 0&lE;x&plus;y&lE;1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula Al Ga In N (0&lE;x&lE;1, 0&lE;y&lE;1, 0&lE;x&plus;y&lE;1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO layer, and grows epitaxially on the SiO layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using gallium nitride group compound

Gallium nitride group compound semiconductor

Light emitting device

Growing community of inventors

Aichi-ken, Japan

Hisaki Kato