Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Hisaki Fujitani

Kosuke Takehara

Naoki Tagami

Toshiyuki Fukuda

Toshiaki Kurachi

Masumi Abe

Masanori Minamio

Hiroaki Fujimoto

Atsuhito Mizutani

Toshifumi Ogata

Kenji Sugiura

Fumito Itou

Keiji Kiba

Toshitaka Akahoshi

A light-emitting device includes: a substrate; a first light-emitting element row disposed on the substrate; a first wire disposed on the substrate and passing between two light-emitting elements adjacent in the first light-emitting element row; and a first bonding wire which has one end connected to one of the two light-emitting elements and another end connected to the other of the two light-emitting elements, and crosses over the first wire.

Light-emitting device and illuminating apparatus

A light-emitting module is provided. The light emitting module includes a substrate; a thin-film layer that is disposed above the substrate, the thin-film layer defining an opening that exposes a surface of the substrate; a light-emitting element disposed above the substrate and in the opening; and a sealant disposed above the substrate and in the opening, the sealant containing a wavelength converter and sealing the light-emitting element. A thickness of the thin-film layer is less than a thickness of the sealant. An edge portion of the sealant is in contact with the thin-film layer. The surface of the substrate and a surface of the thin-film layer are hydrophilic. The surface of the thin-film layer has a lower wettability than a wettability of the surface of the substrate.

Light-emitting module and lighting fixture

A light emitting diode (LED) module which includes: a substrate; a resist including a plurality of layers above the substrate; and an LED element mounted above the substrate. The plurality of layers includes a second layer that is an uppermost layer and a first layer that is an underlying layer. The second layer that is the uppermost layer includes fluorine as a component.

LED module

A light emitting diode (LED) module including: a substrate; a resist including a plurality of layers, above the substrate; and an LED element mounted above the resist via an adhesive. The adhesive includes an addition-reaction type silicone resin. In the resist, a higher positioned layer of the plurality of layers is lower in at least one of sulfur content, phosphorus content, and nitrogen content than a lower positioned layer of the plurality of layers.

LED module with multi-layer resist

An LED module includes a mount board and an LED chip. The mount board includes: an insulation substrate that includes resin and glass; a first conductor, a second conductor and a third conductor; and a white resist layer. The white resist layer is provided with a first opening, a second opening and at least one third opening for exposing the first conductor, the second conductor and the third conductor, respectively. The LED module further includes a wavelength conversion layer disposed between the LED chip and the third conductor in a thickness direction of the LED chip. The wavelength conversion layer includes phosphor particles that are excited by first light emitted from the LED chip to emit second light having wavelengths greater than wavelengths of the first light.

Chip on board type LED module

A light emitting diode (LED) module including: a substrate; a resist including a plurality of layers above the substrate; and an LED element mounted above the substrate. A content percentage of at least one of a phenyl group, an ester bond, and a carbon double bond in a second layer that is an uppermost layer of the plurality of layers is lower than a content percentage of the at least one of the phenyl group, the ester bond, and the carbon double bond in a first layer that is an underlying layer of the plurality of layers, the underlying layer being located below the uppermost layer.

LED module having LED element connected to metal layer exposed by opening in multi-layer resist

A mount substrate includes: an insulation substrate containing resin and glass; connection conductors formed on a surface of the insulation substrate; a first white resist layer that covers the connection conductors; and a second white resist layer that covers the first white resist. Each of the connection conductors includes a copper foil and a plating layer partly formed on the copper foil. The plating layer is formed of metal having oxidation-resistant and corrosion-resistant characteristics higher than those of copper. The first white resist layer is formed with first openings that respectively expose the plating layers of the connection conductors. The second white resist layer covers a periphery of each plating layer of the connection conductors in planar view.

Mount substrate and LED module with the same

A lighting apparatus includes a substrate and a semiconductor light-emitting element mounted on the substrate. The substrate includes a plate-like base member and a copper foil layer formed on part of the base member. The substrate includes a first area and a second area. The first area is an area that is provided so as to surround an element mounting area where a semiconductor light-emitting element is mounted thereon when viewed from the top of the substrate and does not include with the copper foil layer. The second area is an area that includes a part provided so as to surround the first area and the element mounting area; and where the copper foil layer formed. The substrate has a white resist layer disposed thereon that covers the first and second areas and is formed thicker on the first area than on the second area.

Substrate, light-emitting device, illuminating light source, and lighting apparatus

An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.

Bonded structure and bonding method

There is provided a connection structure between a Si electrode (Si member) and an Al wire (Al member). Between the Si electrode and the Al wire, a first part and second parts are present in interposed relation. Each of the first and second parts is in contact with the Si electrode and with the Al wire. In the first part, a Si oxide layer and an Al oxide layer are present. The Si oxide layer is in contact with the Si electrode. The Al oxide layer is interposed between the Si oxide layer and the Al wire. In some of the second parts, Al is present. In the others of the second parts, a Si portion and an Al portion are present.

Connection structure and method for fabricating the same

A first semiconductor element and second semiconductor element are bonded via die-bonding material. A first electrode of the first semiconductor element and a third electrode are joined, by means of flip-chip bonding, to a semiconductor carrier that has the third electrode on the one face of the semiconductor carrier and a fourth electrode on the perimeter of the other face of the semiconductor carrier. The bonding pad of the second semiconductor element and the fourth electrode of the semiconductor carrier are connected via fine metal wire by means of wire bonding. The periphery of the first semiconductor element and the wiring portion of the fine metal wire are filled with insulating sealing resin between the semiconductor carrier and second semiconductor element and the sealing fill region for the sealing resin is formed substantially the same as the external dimensions of the second semiconductor element.

Growing community of inventors

Kyoto, Japan

Hisaki Fujitani