J-devices Corporation

Hisakazu Marutani

Tomoko Takahashi

Osamu Yamagata

Tomoshige Chikai

Minoru Kai

Kazuhiko Kitano

Chunghao Chen

Yasunari Iwami

Shingo Mitsugi

A manufacturing method of a semiconductor package includes locating a plurality of semiconductor packages on a substrate, forming a resin insulating layer covering the plurality of semiconductor devices, forming grooves, in the resin insulating layer, enclosing each of the plurality of semiconductor devices and reaching the substrate, and irradiating the substrate with laser light in positional correspondence with the grooves to separate the plurality of semiconductor devices from each other.

Manufacturing method of semiconductor package including laser processing

A semiconductor device comprising a support plate, a semiconductor element mounted on the support plate and including a circuit element surface having a plurality of first electrodes, a first insulation layer covering the circuit element surface of the semiconductor element, and including a plurality of first apertures exposing the plurality of first electrodes, a second insulation layer covering an upper part of the support plate and side parts of the semiconductor element, and wirings formed on an upper part of the first insulation layer and on an upper part of the second insulation layer, and electrically connected to the corresponding first electrodes.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Nomi, Japan

Hisakazu Marutani