Sony Corporation

Semiconductor Leading Edge Technologies, Inc.

Hisaharu Seita

Kazuhiro Tajima

A substrate-container measuring device has a kinematic platehaving securing pinsprovided at positions defined by the SEMI standards. There is provided an optical distance-measuring sensor, in which a relative position between the optical distance-measuring sensorand the kinematic plateis fixed. A substrate-container measuring jigis placed on the kinematic plate. The substrate-container measuring jighas a base plateto be placed on the kinematic plate, and a slide platethat is slidable over the base plate. The base platehas a group of grooves which uniquely determine a relative position between the base plateand the kinematic plateas a result of being fitted with the corresponding securing pins

Substrate-container measuring device, and substrate-container measuring jig

A substrate container having substrates stored therein and sealed with a door is placed onto a load port apparatus provided on a substrate processing system, and a door of the load port apparatus is docked with the door of the substrate container. An inside of the substrate container is pressurized before opening of the door of the substrate container before the door of the substrate container is opened and the substrates stored in the substrate container is transported to the substrate processing system.

Method for transporting boards, load port apparatus, and board transport system

A vacuum processing chamber preventing corrosion of a magnetic seal means and removing the heavy metals, organic matter, etc. produced by the corrosion, including a vacuum processing chamber, a rotated member (for example, a susceptor and a wafer holder), a rotary shaft penetrating one side of the vacuum chamber and rotating the rotated member, and a cavity being defined between an inner wall of the magnetic seal means and the rotary shaft, said magnetic seal means maintaining the air-tightness in the vacuum processing chamber by using a magnetic fluid in the cavity; a gas inlet introducing a barrier gas (for example, an inert gas like N,, Ar, or He or an inert gas having a slight amount of O,added) to the cavity; and a gas outlet extracting a gas inside the cavity.

Vacuum processing apparatus and magnetic seal rotary bearing unit

A process for producing a semiconductor device which includes a step of drawing out the impurities contained in the electrode film and/or insulating film and contributing to the growth of the insulating film before the heat treatment for activating the electrode film. The step of drawing out the impurities is a step of preliminary heat treatment at a temperature at least the film-forming temperature of the electrode film and no more than the growth temperature of the insulating film. The preliminary heat treatment is preferably performed at a temperature of 450.degree. C. to 800.degree. C., more preferably 450.degree. C. to 700.degree. C. The preliminary heat treatment may be performed after the formation of the electrode film or may be performed during the formation of the electrode film after each formation of one or more thin film layers for forming the electrode film.

Growing community of inventors

Kanagawa, Japan

Hisaharu Seita