Canon Kabushiki Kaisha

Hisae Shimizu

Shigetoshi Sugawa

Masafumi Sano

Katsumi Abe

Ryo Hayashi

Ichiro Okumura

Hiraku Kozuka

Isao Hayashi

Masaaki Naoi

Masato Ofuji

Takehiko Kawasaki

Norio Kaneko

Yasuyoshi Takai

Hideya Kumomi

Hisatoshi Baba

Masaya Kobayashi

Toshihiro Fukasaka

Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG&#x2266;VON&#xd7;C/(C+C) to the second conductive layer.

Method of driving transistor and device including transistor driven by the method

First position information formed on a conveyance body is read by an information detecting portion, and second position information formed on a second image carrier is read by the information detecting portion. Control is made such that a position of an image on the second image carrier matches with a position of an image on the conveyance body from information read by the information detecting portion in transferring the image from the second image carrier to the conveyance body. The information detecting portion is held by a hold member and is disposed at a transfer region.

Image forming apparatus

A fixing film is formed by stacking a heating layer, an electrical conducting layer, and an insulation layer interposed between the heating layer and the electrical conducting layer. A current supplied from a secondary coil flows through stacked layers formed by the secondary coil, the heating layer, an electrical conducting member, and the electrical conducting layer. The electrical conducting member and electrical conducting layer function as a current return path.

Fixing device and image forming apparatus including the same

A non-contact power supply unit including a secondary coil supplies an alternating voltage to multiple heat generation layers provided in a heat generation film. In one of the heat generation layers, a loop is provided as a variable impedance circuit in which the impedance changes according to the frequency. A capacitance element in which the impedance changes according to the frequency is provided in the loop. The heat generation amounts of the heat generation layers are switched by changing the frequency of the alternating voltage generated in the secondary coil according to the size of the recording material that is the heating target.

Heating apparatus for heating a toner image and image forming apparatus including the same

In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.

Thin film transistor circuit, light emitting display apparatus, and driving method thereof

An image forming apparatus includes first and second image bearing members, a belt member contacting the first and second image bearing members, first and second electrostatic image forming portions for respectively forming electrostatic images on the first and second image bearing members, first and second developing portions for forming toner images on the basis of the electrostatic images formed on the first and second image bearing members, first and second transfer portions for transferring onto the belt member the toner images formed on the first and second image bearing members and/or electrostatic image indices formed by the electrostatic image forming portions, first and second detecting portions for detecting the electrostatic image indices which are formed by the electrostatic image forming portions, and an adjusting portion for adjusting a forming operation of an image to be formed on the belt member on the basis of outputs of the first and second detecting portions, and a belt member charging portion for electrically charging the belt member before transfer of the electrostatic image indices.

Image forming apparatus using electrostatic image registration control

A drive circuit for a light emitting display apparatus including a pixel circuit having a light emitting device for emitting a light having brightness determined based on supplied current and a drive transistor for supplying the current to the light emitting device, comprises a threshold value correction circuit converting a second signal including a threshold voltage of the drive transistor and a data voltage, the second signal being output from the drive transistor when a first signal including the data voltage is input into the control electrode of the drive transistor, into a third signal including the threshold voltage of an inverted polarity and the data voltage or a voltage corresponding to the data voltage, to output the converted third signal to the pixel circuit. The pixel circuit includes a switch for supplying the third signal to the control electrode of the drive transistor.

Drive circuit and drive method of light emitting display apparatus

In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 10cmeVor less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In&#x2014;Ga&#x2014;Zn&#x2014;O (IGZO), amorphous In&#x2014;Zn&#x2014;O (IZO) and amorphous Zn&#x2014;Sn&#x2014;O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

Method of treating semiconductor element

Compatibility of high sensitivity with low remaining images, and low crosstalk can be achieved by a laminated solid-state image pickup device, which includes accumulating portions for accumulating electric signals, reading units for reading the electric signals, connecting members formed in contact with the accumulating portions, and a photoconductive film, and by a method for manufacturing the device. The photoconductive film is made of a non-crystalline semiconductor, and is configured by laminating a carrier multiplication layer, a light absorbing layer, a charge injection inhibiting layer of a second conduction type. Each of the connecting members is made of a semiconductor layer of a first conduction type, intrinsic or having a low impurity density, surrounded by a semiconductor layer of the second conduction type or a conductive material.

Growing community of inventors

Tokyo, Japan

Hisae Shimizu