Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Chemical Company, Ltd.

Hirozi Yamada

Hiroshi Umezaki

Hideki Nishida

Yutaka Sugita

Hiroshi Okabe

Yoshinobu Tarutani

Norikazu Tsumita

Mikio Hirano

Nagatugu Koiso

Katsuhiro Kaneko

Hiroyuki Mori

Ushio Kawabe

Yoshitaka Hirata

Kazunori Yamamoto

Eriko Takeda

Yasushi Shimada

Yuji Hatano

Hiroyuki Kuriya

Kazuhisa Otsuka

Masanori Yamaguchi

Shinichiro Yano

Sachiko Kizaki

Masatake Takahashi, Deceased

The present invention provides a manufacturing method of an electronic circuit device including a multi-layer circuit board incorporated with a thin film capacitor small in size and of high performance capable of attaining higher capacitance value with a thin dielectric film of high dielectric constant and with favorable film quality. A first electrode layer and a thin film dielectric layer are laminated continuously in this order in one identical to laminate each of the layers on a leveled substrate in one identical chamber and then the first electrode layer is fabricated a conductor pattern.

Manufacturing method of electronic circuit including multilayer circuit board

In an electronic circuit equipment using a multilayer circuit board on which a semiconductor chip is mounted, a thin film capacitor is provided on the multilayer circuit board. Moreover, a first electrode of the thin film capacitor and a first wiring of the multilayer circuit board are electrically connected to each other, and a second electrode of the thin film capacitor and a second wiring of the multilayer circuit board are electrically connected to each other, respectively. Furthermore, a thin film dielectric of the thin film capacitor was grown epitaxially with the first electrode as its base. The employment of the multilayer circuit board makes it possible to provide the electronic circuit equipment using the multilayer circuit board that includes the built-in thin film capacitor having the high dielectric-constant thin film dielectric.

Electronic circuit equipment using multilayer circuit board

A DC powered integrated circuit includes a plurality of magnetic flux coupling type Josephson elements. First and second Josephson elements are connected in series to form a first element series circuit of Josephson elements. Third and fourth Josephson elements are connected in series to form a second element series circuit of Josephson elements. The first and second element series circuits are connected in series to form a huffle circuit, with a load inductance, three resistors and a DC current source.

DC-powered Josephson integrated circuit

A method of producing a Josephson junction device consisting of thin films of superconducting materials such as niobium and niobium nitride that work at cryogenic temperatures, in which a base electrode layer, tunnel barrier layer and a counterelectrode layer constituting a Josephson junction are formed on a substrate. In order to form a desired electrode pattern on the counterelectrode layer, a resist pattern is used as a mask for dry etching, followed by a plasma ashing process for ablating part of the resist in order to form a terrace-shaped portion at the edges and corners of the counterelectrode pattern by reforming and shrinking the cross-sectional geometry of the resist. Then, a thin insulating film for covering the edged layers is deposited over the entire surface of substrate, followed by the removal of said resist pattern together with said insulating film deposited on said resist pattern in order to form a protecting layer around the counterelectrode pattern. The substrate further undergoes subsequent stages to produce a Josephson junction device.

Method of forming Josephson junction devices

A magnetic bubble memory device and a method of fabricating the device are disclosed in which a conductor pattern lies at least between a film for maintaining magnetic bubbles therein, and a soft magnetic material pattern. Further, the magnetic bubble memory device can be formed precisely without suffering from errors due to mask alignment, by employing a mask provided with a plurality of patterns which are different in transmittance.

Magnetic bubble memory device and method of fabricating the same

A sandwich-type Josephson junction element wherein a counter electrode is made of a Mo-Re alloy which contains 10-90 atomic-% of Re. The Josephson junction element has a high operating temperature, and any deterioration thereof attributed to a thermal cycle is not noted.

Josephson junction element

A method of forming a microscopic pattern wherein the object to be etched is overlaid with a film made of a material which is highly immune to etching and further provided with a reflection reducing film. Thus, the reflection of the irradiating ultraviolet rays by the underlying layer is effectively prevented.

Method of forming a microscopic pattern

A magnetic bubble memory device is disclosed in which a hardened film made of a heat-resisting highly-polymerized organic resin and having a predetermined thickness is employed for an insulating film interposed between a conductor pattern and a soft magnetic material pattern. In a conventional magnetic bubble memory device in which the above-mentioned insulating film is made of SiO.sub.2, an abrupt step is produced in the soft magnetic material pattern due to the existence of the conductor pattern beneath a portion of the soft magnetic material pattern, and the margin of bias magnetic field is thereby lowered. According to the present invention, the step is reduced and smoothed, and thus the lowering of the margin can be prevented.

Magnetic bubble memory device

Growing community of inventors

Tsukui, Japan

Hirozi Yamada