Sanyo Electric Co., Ltd.

Hiroyuki Yukawa

Shingo Kameyama

This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a photocatalytic layer arranged on an outermost surface of the facet coating film and a dielectric layer arranged between the photocatalytic layer and the emitting side cavity facet. A thickness of the dielectric layer is set to a thickness defined by m&#xd7;&#x3bb;/(2&#xd7;n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is &#x3bb; and a refractive index of the dielectric layer is n, and at least 1 &#x3bc;m.

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Kishiwada, Japan

Hiroyuki Yukawa