Rohm Co., Ltd.

Hiroyuki Yuji

Shunsuke Akasaka

Ken Nakahara

Masashi Kawasaki

Akira Ohtomo

Atsushi Tsukazaki

Kentaro Tamura

Yurina Amamoto

Disclosed herein is a limiting-current type gas sensor including a solid electrolyte, a first electrode disposed on the solid electrolyte, a second electrode disposed on the solid electrolyte, and a gas feed passage extending between a gas inlet and a first portion of the first electrode, the first portion facing the solid electrolyte. The first electrode is a first porous metal electrode. The gas feed passage is formed of a first porous transition metal oxide having a second melting point higher than a first melting point of the first electrode. The first porous transition metal oxide is TaO, TiO, or CrO.

Limiting-current type gas sensor

A p-type MgZnO-based thin film () is formed on a substrate () made of a ZnO-based semiconductor. The p-type MgZnO-based thin film () is composed so that X as a ratio of Mg with respect to Zn therein can be 0&#x2266;X&#x3c;1, preferably 0&#x2266;X&#x2266;0.5. In the p-type MgZnO thin film (), nitrogen as p-type impurities which become an acceptor is contained at a concentration of approximately 5.0&#xd7;10cmor more. The p-type MgZnO thin film () is composed so that n-type impurities made of a group IV element such as silicon that becomes a donor can have a concentration of approximately 1.0&#xd7;10cmor less. The p-type MgZnO thin film () is composed so that n-type impurities made of a group III element such as boron and aluminum which become a donor can have a concentration of approximately 1.0&#xd7;10cmor less.

p-Type MgZnO-based thin film and semiconductor light emitting device

Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layerstoare epitaxially grown on an MgZnO (0&#x2266;x&#x3c;1) substratehaving a +C surface (0001), as a main surface, inclined at least in an m-axis direction. A p-electrodeis formed on the ZnO-based semiconductor layer, and an n-electrodeis formed on the underside of the MgZnO substrate. Thereby, steps regularly arranged in the m-axis direction can be formed on the surface of the MgZnO substrate, and a phenomenon called step bunching is prevented. Consequently, the flatness of a film of the semiconductor layers laminated on the substratecan be improved.

ZnO-based semiconductor device

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Kyoto, Japan

Hiroyuki Yuji