Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Disco Corporation

Hiroyuki Yoshihara

Masaki Goto

Toru Kimura

Kenichi Hayashi

Masao Kikuchi

Dai Nakajima

Kiyofumi Kitai

Yoshihito Asao

Masaki Kato

Hisashi Kawafuji

Kei Yamamoto

Kazuhiro Tada

Kiyoshi Shibata

Takao Mitsui

Yasuyuki Sanda

Yoichi Goto

Shunji Masumori

Hideki Komori

Mitsugu Tajiri

A power semiconductor apparatus includes a mold portion, a panel that is conductive and in a flat plate shape, and a plurality of fins. The mold portion includes a power semiconductor element and a base plate that are molded. An opening is formed in the panel into which the base plate is inserted. The plurality of fins is fixed in grooves of the base plate. The panel has a plurality of protrusions on side surfaces forming the opening. Each protrusion has a fifth surface a cross section of which has a shape that tapers down toward an end of the protrusion, the cross section being parallel to a plane extending in the Z direction and a direction in which the protrusion protrudes. The base plate has cover portions covering the fifth surfaces, and is plastically deformed to allow the panel to be fitted in the base plate to fill gaps.

Power semiconductor apparatus and method for manufacturing the same

A method for inspecting the influence of an installation environment upon a processing apparatus includes setting a mark for specifying a relative positional relation between a chuck table and a processing unit, imaging the mark plural times by using an imaging unit when a moving unit is at rest, and detecting the position of the mark from an image and then determining whether or not the influence of the installation environment upon the processing apparatus is present based on whether the change in position of the mark is less than or more than a threshold.

Inspecting method for inspecting influence of installation environment upon processing apparatus

The power module of the invention includes a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure. The resin enclosure of the power module includes: a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which the one surface of the metal base is exposed; and a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface.

Power module, power semiconductor device and power module manufacturing method

A swaged heat includes a fin base having an outer periphery, and formed with a first fin insert groove and a second fin insert groove interposing a swage portion of a bi-forked shape in between, a first fin fixed to the first fin insert groove of the fin base using the swage portion, a second fin fixed to the second fin insert groove of the fin base using the swage portion, a panel having an opening portion, and placed on the outer periphery of the fin base. The thickness of the outer periphery is smaller than that of the fin base.

Swaged heat sink and heat sink integrated power module

An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.

Semiconductor device and method of manufacturing the same

A radiator including: a plurality of radiation fins; and a radiation fin support base having a heater element mounted to one surface thereof and a plurality of parallel fin grooves to which the radiation fins are installed and a projection configured to fix the radiation fin formed to the other surface thereof, wherein a top of the projection pushes one side surface of the radiation fin to push the other side surface of the radiation fin toward a side surface of the fin groove, and wherein the fin groove and the projection are each divided in a plurality of pieces in a longitudinal direction of the fin groove, and each of the divided fin grooves and each of the divided projections have a same length in the longitudinal direction of the fin groove and are paired with each other.

Radiator and method of manufacturing radiator

A power semiconductor circuit device and a method for manufacturing the same, both of which are provided with: a base board on which at least a power semiconductor element is mounted; a resin which molds the base board and the power semiconductor element in a state where partial surfaces of the base board, including a base board surface opposite to a surface on which the power semiconductor element is mounted, are exposed; and a heat dissipating fin joined to the base board by a pressing force. A groove is formed in the base board at a portion to be joined to the heat dissipating fin, and the heat dissipating fin is joined by caulking to the groove.

Power semiconductor circuit device and method for manufacturing the same

A control device of a rotating electric machine to which an inverter is integrally assembled is downsized, and manufacturing costs are reduced. An inverter for controlling outputs from the rotating electric machine is integrated with a rotating electric machine, and in which a control device forming an inverter is constructed of a switching element and a heat sink, a drain electrode terminal of the switching element is directly joined to the heat sink, and a source electrode terminal and gate electrode terminal of the switching element are joined to a metal pattern formed at a connection member.

Rotating electric machine and manufacturing method thereof

Each lead frame for a power chip has one side main surface on which a power chip is mounted and a suspension lead part provided projectingly from a region reserved for forming mold resin in addition to a lead terminal. Thus, the lead frame can be supported by the plurality of suspension lead parts in a molding step. A metal block is provided on the other main surface of the lead frame to face the power chip. Consequently, a semiconductor device with good heat radiation properties and good insulation breakdown voltages can be obtained.

Growing community of inventors

Tokyo, Japan

Hiroyuki Yoshihara