Kabushiki Kaisha Toshiba

Ebara Corporation

Other

Jsr Corporation

International Business Machines Corporation

Siemens Components, Inc.

Hiroyuki Yano

Gaku Minamihaba

Yukiteru Matsui

Dai Fukushima

Katsuya Okumura

Nobuyuki Kurashima

Atsushi Shigeta

Yoshikuni Tateyama

Haruo Okano

Norio Kimura

Masayuki Hattori

Susumu Yamamoto

Keiji Horioka

Masako Kodera

Gen Toyota

Riichirou Aoki

Nobuo Hayasaka

Masaru Hori

Hiromi Yajima

You Ishii

Akira Iio

Tetsuji Togawa

Junji Kunisawa

Tohru Watanabe

Mie Matsuo

Toshio Watanabe

Hisataka Hayashi

Nobuo Kawahashi

Mitsuhiko Shirakashi

Masayuki Motonari

Takeshi Nishioka

Kenji Iwade

Sadayuki Jimbo

Hisashi Kaneko

Junichi Wada

Hirokuni Hiyama

James Gardner Ryan

Tetsuo Matsuda

Hiroshi Toyoda

William J Cote

Hirokazu Kato

Rempei Nakata

Kazuhiro Tomioka

Yu Ishii

Yasutaka Sasaki

Haruki Mori

Yasuhiro Ito

Kenro Nakamura

Hirotaka Shida

Kazuo Nishimoto

Shinichi Hirasawa

Masako Kinoshita

Hozumi Yasuda

Kenya Ito

Yukio Ikeda

Kiyotaka Miyano

Kenji Yamaguchi

Masayuki Nakanishi

Masayoshi Hirose

Noburu Shimizu

Kunio Oishi

Seiro Miyoshi

Takeo Kubota

Akihiro Takemura

Kazuo Kawaguchi

Kiyonobu Kubota

Kazuhito Uchikura

Matthias L Peschke

Tomoyuki Yahiro

Satoko Seta

Kathryn Helen Kelleher

Yasumasa Mori

A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.

Polishing method and method for fabricating semiconductor device

There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 &#x3bc;m, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 &#x3bc;m, and a surfactant having a hydrophilic moiety.

Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device

A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device

A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support memberand a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring. The retainer ring is provided with a plurality of through-holes communicating with the flow passage to spray the gas flowing through the flow passage onto the polishing surface of the polishing table.

Substrate holding mechanism, substrate polishing apparatus and substrate polishing method

A surface treatment composition of this invention is a composition for treating a metal wiring-including surface of a semiconductor substrate, which includes a compound (A) represented by a specific structural formula and a solvent (B) having a boiling point at one atmospheric pressure of 50 to 300&#xb0; C., and has a pH of 4 to 11. According to the surface treatment composition of the present invention, oxidation of metal wiring of a semiconductor substrate can be suppressed and deterioration of the flatness of the metal wiring portion due to unusual oxidation can be suppressed. Furthermore, when an insulating film or a barrier metal film is present on a metal wiring-including surface of the semiconductor substrate, fang and surface roughness of the metal wiring occurring in the interface between the metal wiring and the insulating film or the barrier metal film can be suppressed.

Surface treatment composition, surface treatment method, and method for manufacturing semiconductor device

A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.

Manufacturing method of a semiconductor device

A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

Chemical mechanical polishing method and method of manufacturing semiconductor device

A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

Method of manufacturing semiconductor device

Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

Post-CMP treating liquid and manufacturing method of semiconductor device using the same

An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 &#x3bc;m on a surface. The maximum length of the resin particles is not more than 5 &#x3bc;m and is 2.5 to 25 times as large as the curvature radius.

Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor device

Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.

A substrate processing method is used to polish a substrate. The substrate processing method includes rotating a substrateby a motor, polishing a first surface of a peripheral portion of the substrateby pressing a polishing surface of a polishing mechanismagainst the first surface, determining a polishing end point of the first surface by monitoring a polished state of the first surface, stopping the polishing according to the determining the polishing end point, determining a polishing time spent for the polishing, determining a polishing time for a second surface of the peripheral portion based on the polishing time of the first surface, and polishing the second surface for the determined polishing time.

Substrate processing method and substrate processing apparatus

A method of manufacturing a semiconductor device includes depositing a SiOfilm on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiOfilm; and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.

Method of manufacturing a semiconductor device

Growing community of inventors

Yokohama, Japan

Hiroyuki Yano