Nichia Corporation

Hiroyuki Watanabe

Shoji Hosokawa

Shigeki Yoshida

Shigeyuki Suzuki

Kazuya Nishimata

Takayuki Shinohara

Eri Matsuka

Kenji Asai

Provided is a phosphor having superior light-emitting properties. A phosphor composition includes: a nitride phosphor that contains, in a composition thereof, an element M that is at least one selected from the group consisting of rare earth elements except cerium, silicon, nitrogen, and cerium; and an oxyfluoride. In the phosphor composition, a content of the oxyfluoride relative to the phosphor composition is 1.5% by mass or higher and 10% by mass or lower according to an X-ray diffraction reference intensity ratio method.

Phosphor composition and method for manufacturing same

A nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element including at least one selected from the group consisting of Mg, Ca, Sr, and Ba. In the composition, a ratio of a total molar content of the group 2 element and Eu to a molar content of Al is 0.8 or more and 1.1 or less, a molar ratio of Eu is 0.002 or more and 0.08 or less, a molar ratio of Si is 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has a first peak in a range of 17° 2θ or more and 19° 2θ or less and a second peak in a range of 34° 2θ or more and 35.5° 2θ or less in a CuKα powder X-ray diffraction pattern.

Nitride phosphor, method for manufacturing the same, and light emitting device

A wavelength conversion member includes a support and a wavelength conversion layer including a first phosphor having a composition represented by Formula (1) and having an emission peak wavelength in a range from 550 nm to 620 nm, and a second phosphor having a different emission peak wavelength and/or a full width at half maximum from the first phosphor. An amount of the first phosphor in the wavelength conversion layer is in a range from 20 mass % to 80 mass % relative to a total amount of the phosphors In Formula (1), Mrepresents at least one of rare earth elements other than La and Ce, a total molar content percentage of Y, Gd, and Lu in Mis 90% or more, and p, q, r, and s satisfy 2.7≤(p+q+r)≤3.3, 0≤r≤1.2, 10≤s≤12, and 0<q≤1.2.LaCeMSiN  (1)

Wavelength conversion member and light emitting device

Provided is a fluorescent material with high brightness. The fluorescent material includes a nitride fluorescent material comprising La, Ce, Si, and N; and a first phosphorus compound disposed on a surface of the nitride fluorescent material. The first phosphorus compound includes at least one selected from the group consisting of lanthanum phosphate, lanthanum hydrogen phosphate, and hydrates thereof. A content of phosphorus atoms in the fluorescent material is 0.07% by mass or higher and 0.8% by mass or lower.

Fluorescent material and method for producing same

A nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element including at least one selected from the group consisting of Mg, Ca, Sr, and Ba. In the composition, a ratio of a total molar content of the group 2 element and Eu to a molar content of Al is 0.8 or more and 1.1 or less, a molar ratio of Eu is 0.002 or more and 0.08 or less, a molar ratio of Si is 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has a first peak in a range of 17&#xb0; 2&#x3b8; or more and 19&#xb0; 2&#x3b8; or less and a second peak in a range of 34&#xb0; 2&#x3b8; or more and 35.5&#xb0; 2&#x3b8; or less in a CuK&#x3b1; powder X-ray diffraction pattern.

The wavelength converter includes a support, and a wavelength conversion layer disposed on the support. The wavelength conversion layer contains a fluorescent layer containing a fluorescent material with a composition represented by formula (1) below, and having a thickness of from 5 &#x3bc;m to 155 &#x3bc;m. A ratio of a sum of cross-sectional areas of particles of the fluorescent material in a cross-section of the wavelength conversion layer orthogonal to a disposed surface of the wavelength conversion layer that is disposed on the support and including a full width of the wavelength conversion layer to a cross-sectional area of the cross-section of the wavelength conversion layer is from 5% to 40%. In the formula (1), Mis at least one selected from the rare earth elements other than La and Ce; a total amount of yttrium (Y), gadolinium (Gd), and lutetium (Lu) by mole with respect to a total amount of Mby mole is 90% or more; and p, q, r, and s satisfy 2.7&#x2264;p+q+r&#x2264;3.3, 0&#x2264;r&#x2264;1.2, 10&#x2264;s&#x2264;12, and 0&#x3c;q&#x2264;1.2.LaCeMSiN&#x2003;&#x2003;(1)

Wavelength converter and light emitting device

A method for producing a nitride fluorescent material includes preparing fluorescent material core particles having a composition containing Sr, Ca, Eu, Al, Si, and N, in which, when a molar ratio of Al in the composition is 1, a molar ratio of Sr is in a range of 0.45 or more and 1.1 or less, a molar ratio of Ca is in a range of more than 0 and less than 0.55, a molar ratio of Eu is in a range of more than 0 and 0.033 or less, a total molar ratio of Sr, Ca, and Eu is 1.1 or less, a molar ratio of Si is in a range of 0.81 or more and 1.21 or less, and a molar ratio of N is in a range of 2.25 or more and 3.85 or less, subjecting them to a first heat treatment and a second heat treatment.

Method for producing nitride fluorescent material, and nitride fluorescent material

Provided is a method for producing a nitride fluorescent material including: preparing a raw material mixture including a hydride containing at least one first alkaline earth metal element, at least one compound containing at least one second alkaline earth metal element and selected from an amide compound and an imide compound, a compound containing europium, a compound containing aluminum, and a compound containing silicon, wherein at least one of the compound containing europium, the compound containing aluminum, and the compound containing silicon is a nitride; and subjecting the raw material mixture to a heat treatment to obtain the nitride fluorescent material.

Method for producing nitride fluorescent material

Provided is a method of producing a nitride fluorescent material containing silicon nitride particles containing Eu, at least one alkaline earth metal selected from the group consisting of Mg, Ca, Sr, and Ba, Al, and fluorine in a composition of the silicon nitride particles. The method includes heat treating a raw material mixture containing an Eu source, a source of the alkaline earth metal, an Al source, an Si source, and an alkaline earth metal fluoride containing at least one selected from the group consisting of Mg, Ca, Sr, and Ba, wherein a molar content ratio of fluorine atom to Al is from 0.02 to 0.3.

Nitride fluorescent material, method of producing nitride fluorescent material and light emitting device

A method for producing a nitride fluorescent material having high emission luminance can be provided. The method includes heat-treating a raw material mixture containing silicon nitride, silicon, an aluminium compound, a calcium compound, and a europium compound.

Nitride fluorescent material, method for producing the same, and light emitting device

Provided is a light emitting device which includes a light emitting element having a peak emission wavelength in a range of 400 nm to 500 nm, and a fluorescent member containing a fluorescent material having a peak emission wavelength in a range of 630 nm to 670 nm, and a composition represented by the formula. CaSrEuSiAlN. In the formula, s, t, u, v, w, and x satisfy 0.25&#x2264;s&#x2264;0.5, 0.4&#x2264;t&#x2264;0.75, 0.01&#x2264;u&#x2264;0.04, 0.8&#x2264;s+t+u&#x2264;1.1, 0.8&#x2264;v&#x2264;1.2, 0.8&#x2264;w&#x2264;1.2, 1.8&#x2264;v+w&#x2264;2.2, and 2.5&#x2264;x&#x2264;3.2. The light emitting device emits light having an x value of CIE 1931 chromaticity coordinates of 0.640 or more.

Light emitting device

A method for producing a nitride fluorescent material having high emission luminance can be provided. The method includes heat-treating a raw material mixture containing silicon nitride, silicon, an aluminum compound, a calcium compound, and a europium compound.

A light emitting device includes a light emitting element of a peak emission wavelength in a range of 430 nm to 470 nm and a fluorescent member. The fluorescent member includes a first phosphor including a silicate having a composition that contains at least one element selected from the group consisting of Ca, Sr, and Ba, at least one element selected from the group consisting of Cl, F, and Br, and Mg and Eu, a second phosphor including an aluminate that has a composition containing Lu and Ce, and a third phosphor having emission spectrum with a half bandwidth of 86 nm or less and including a silicon nitride that has a composition containing at least one of Sr or Ca, and containing Al and Eu.

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Itano-gun, Japan

Hiroyuki Watanabe