Denso Corporation

Toyohashi University of Technology

Hiroyuki Wado

Toshimasa Yamamoto

Kuniaki Mamitsu

Masayoshi Nishihata

Takao Iwaki

Yukihiro Takeuchi

Takahisa Kaneko

Yasushi Kohno

Chikage Noritake

Toshiki Itoh

Masaya Tonomoto

Eiji Nomura

Makiko Sugiura

Shuichi Yamashita

Takahiko Yoshida

Toshiyuki Morishita

Toshiki Isogai

Makoto Ishida

Akihiko Teshigahara

Tetsuo Yoshioka

Noriyuki Matsushita

Yasushi Goka

Yasushi Ookura

Megumi Suzuki

Eishi Kawasaki

Tomoki Tanemura

Keita Fukutani

Atsushi Miura

Kazuhiko Kanoh

Yoshinori Otsuka

Makoto Tsunekawa

Daisuke Akai

Tomoyuki Mizutani

Ryuuichirou Abe

Toshirou Gotou

Kiyoyuki Sugiura

Takayuki Matsui

Syun Sugiura

Kiyokazu Isomura

A piezoelectric element includes a substrate having a first surface with a predetermined orientation; a lower electrode layered on the first surface of the substrate; a piezoelectric thin film layered on the lower electrode and having a piezoelectric body; and an upper electrode layered on the piezoelectric thin film. A voltage is to be impressed between the lower electrode and the upper electrode to deform the piezoelectric thin film. The piezoelectric thin film is epitaxially grown on the lower electrode using a physical vapor deposition or a chemical vapor deposition.

Piezoelectric element and method of producing the same

A liquid component sensor includes: an infrared light source; a detection cell including: two substrates made of material for penetrating an infrared light therethrough and stacked each other; a passage for flowing liquid arranged between facing surfaces of the substrates; and a detection portion for detecting the liquid provided by at least a part of the passage; a spectrometer for dispersing light penetrating the detection cell; and a light detector for detecting dispersed light. Each substrate includes outside and facing surfaces, so that two substrates provide four surfaces totally. The detection cell further includes a filter for passing the infrared light having a predetermined wavelength selectively. The filter is disposed on at least one of four surfaces at a predetermined position, which corresponds to at least the detection portion.

Liquid component sensor

A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.

Semiconductor device including cooler

A Fabry-Perot interferometer includes an input mirror and an output mirror arranged facing the input mirror via a gap. Each mirror includes a pair of high-refractive layers and a space layer arranged selectively between the high-refractive layers. At least one of an input-side bridge part and an output-side bridge part arranged crossing the gap, is movable as a membrane. Each bridge part includes a transmission portion and a periphery portion. Each transmission portions includes a mirror element in which the space layer is sandwiched by the pair of high-refractive layers. In a second direction perpendicular to the first direction, the mirror element of the input mirror has a width larger than seven times of a maximum wavelength of a transmission light output from the output mirror, and functions as a diffraction restriction mirror.

Fabry-Perot interferometer

Semiconductor package cooled by grounded cooler

In a semiconductor module, a first heat sink is disposed on a rear surface of a first semiconductor chip constituting an upper arm, and a second heat sink is disposed on a front surface of the first semiconductor chip through a first terminal. A third heat sink is disposed on a rear surface of a second semiconductor chip constituting a lower arm, and a fourth heat sink is disposed on a front surface of the second semiconductor chip through a second terminal. A connecting part for connecting between the upper arm and the lower arm is integral with the first terminal, and is connected to the third heat sink while being inclined relative to the first terminal.

Semiconductor module and method of manufacturing the same

A method of producing a structure by three-dimensionally processing a flat member includes a preparing, a first forming and a second forming. In the preparing, a substrate is prepared. In the first forming, an etching mask is formed on the substrate. The etching mask has at least two openings, and areas of the two openings are different from each other. In the second forming, at least a part of a three-dimension surface shape of the structure is formed on a surface of the substrate by a dry-etching on the substrate in accordance with the area of the opening of the etching mask.

Optical gas concentration detector and method of producing structure used in the detector

An optical multilayer mirror of a Fabry-Perot interferometer includes a reinforcing section provided as a side wall of each of second and fourth high refractive-index layers. The reinforcing section is configured to support a portion of each of the second and fourth high refractive-index layers covering a top surface of each of first and second low refractive-index layers and reach first and third high refractive-index layers via each of the first and second low refractive-index layers, respectively. Even when the first and second low refractive-index layers lack a mechanical strength with a high n ratio achieved by selecting materials for the first through fourth high refractive-index layers and the first and second low refractive-index layers, the reinforcing section helps prevent the second and fourth high refractive-index layers from being bent. The optical multilayer mirror thus features a wide high-reflectance band.

Optical multilayer mirror and fabry-perot interferometer having the same

An ultrasonic sensor is provided with a substrate unit where a thin-walled portion is arranged and a piezoelectric oscillator which is formed at the substrate unit. The piezoelectric oscillator includes two electrodes and a piezoelectric film positioned between the two electrodes. The thin-walled portion and the piezoelectric oscillator construct a membrane structure which will resonate at a predetermined frequency.

Ultrasonic sensor and manufacture method of the same

A flow sensor for detecting flow of fluid includes a thin film portion. The thin film portion has a heater and a detector for detecting temperature around the heater. The heater is made of semiconductor. This flow sensor has high sensor sensitivity with low energy consumption. Further, the sensor has high detection accuracy, and the thin film portion has high endurance. Furthermore, the flow sensor with a passivation film has appropriate thickness so as to improve strength of a thin film portion.

Flow sensor having thin film portion and method for manufacturing the same

An airflow meter has a membrane type sensor element. The sensor element is supported on a support member so that a sensing surface of the sensor element is in parallel to the airflow direction. The airflow meter has at least one means for protecting the sensor element from dust such as foreign particles. The protecting means is provided with an obstruction member that is disposed upstream or downstream of the sensor element with respect to the airflow direction. The sensor element is hidden behind the obstruction member. The obstruction member has gradually spreading surfaces and gradually converging surfaces along the airflow direction. Alternatively, the protecting means can be provided with a deflector, a cover member, a flow guide member, an inlet or a dust collector.

Apparatus for measuring flow amount

In a sensor chip for a fluid flow sensor, a thin film portion is formed above a hollow cavity portion while leaving thin film layers formed on the surface of a substrate. A conductor is provided on the inner wall face of a through hole formed to penetrate the substrate to thereby electrically connect a detecting portion constituted by a conductor film in the thin film layers and a substrate conductor portion formed on the rear face side of the through hole. The surface of a circuit board is formed with a control circuit and a base conductor portion electrically connected to the control circuit. The sensor chip and the circuit board are layered and the substrate conductor portion and the base conductor portion are electrically connected.

Fluid flow sensor and method of fabricating the same

A thin-film type flow sensor having a thin-film part in which a plurality of patterned resistor films are sandwiched between a pair of insulator films. The resistance ratios among the resistor films are minimized from one sensor to another made from the same wafer. The flow sensor has a lower insulator film, the resistor films, and an upper film laminated in succession on a substrate. The resistor films include a patterned fluid thermometer, a temperature detector, and a heater. The heater has a wiring configuration in which resistor elements are connected in a parallel manner. The wiring widths of the heater and the thermometer can thus be made identical, so that the resistance ratios become invariant over the wafer surface, irrespective of a disparity in etching variations.

Flow sensor

Growing community of inventors

Toyota, Japan

Hiroyuki Wado