Tokyo Electron Limited

Hiroyuki Wada

Jun Ogawa

Katsuyuki Hishiya

Hiroaki Ikegawa

Takeshi Oyama

Akihiro Kuribayashi

A film forming apparatus sequentially supplies a raw material gas of a compound containing chlorine and an element other than the chlorine, and a first reaction to form a fil. The film forming apparatus includes a rotary table, a raw material gas ejection port configured to eject the raw material gas to a first region, a reaction gas supply part configured to supply, to a second region, a first reaction gas and a second reaction gas that reacts with chlorine to generate a third reaction product, in order to prevent a second reaction product from being generated due to a reaction of the chlorine remaining in the vacuum container with air when performing the opening-to-air. The film forming apparatus further includes an atmosphere separation part, a first exhaust port and a second exhaust port, and a controller.

Film forming apparatus and method of operating film forming apparatus

A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

Cleaning method of deposition apparatus

An apparatus includes: a rotatable table for revolving a substrate mounting region on which a substrate is mounted about a rotational center thereof; a first gas supply part for supplying a source gas to a first region through injection portions formed to face the rotatable table; an exhaust part for exhausting a gas through an exhaust port; a second gas supply part for supplying a separation gas for separating inner and outer sides of a second closed path from each other; a third gas supply part including two gas injectors arranged to extend at a certain interval in the crossing direction; a plasma generation part for reaction gas for plasmarizing the reaction gas injected toward the second region; and other process regions in which processes different from the supply of the source gas and the supply of the reaction gas are performed.

Film formation apparatus

An apparatus includes: a rotatable table for revolving a substrate mounting region on which a substrate is mounted; a first gas supply part for supplying a source gas to a first region through an injection portion formed to face the rotatable table; an exhaust part for exhausting a gas through an exhaust port; a second gas supply part for supplying an separation gas for separating inner and outer sides of a second closed path from each other through an separation gas supply port formed to extend along the second closed path surrounding the exhaust port; a third gas supply part including two gas injectors arranged to extend at a certain interval in a direction crossing the revolutional direction with a second region defined outside the second closed path interposed between the gas injectors; and a plasma generation part for plasmarizing a reaction gas.

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Nirasaki, Japan

Hiroyuki Wada