Adeka Corporation

Samsung Electronics Co., Ltd.

Hiroyuki Uchiuzou

Younjoung Cho

Haruyoshi Sato

Gyuhee Park

Atsushi Sakurai

Naoki Yamada

Jae-Soon Lim

Youn-Joung Cho

Youn-soo Kim

Tomoharu Yoshino

Gyu-Hee Park

Akihiro Nishida

Masako Hatase

Tsubasa Shiratori

Takanori Koide

Yutaro Aoki

Seungmin Ryu

Kazuki Harano

Kazuya Saito

Yoshiki Manabe

Wakana Fuse

Younsoo Kim

Jaewoon Kim

An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

Organometallic compound and method of manufacturing integrated circuit using the same

An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I):

Organometallic adduct compound and method of manufacturing integrated circuit using the same

A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

Molybdenum compound and method of manufacturing integrated circuit device using the same

A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Method of forming a thin film

The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), Rand Reach independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and Rdenotes a methyl group or ethyl group. It is preferable for Rand Rto be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

Method for producing a thin film

Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device

Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), Rand Reach represent straight or branched C2-C5 alkyl, and Rrepresent methyl or ethyl. Rand Rare each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD. 

Aluminum compound, thin-film forming raw material, and method for producing thin film

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Tokyo, Japan

Hiroyuki Uchiuzou