Sony Corporation

Nec Corporation

Sony Semiconductor Solutions Corporation

Honda Giken Kogyo Kabushiki Kaisha

Honda Motor Co., Ltd.

Nec Lcd Technologies, Ltd.

Sony Group Corporation

Ihi Corporation

Renesas Electronics Corporation

Nippon Seiko Kabushiki Kaisha

Ishikawajima-harima Jukogyo Kabushiki Kaisha

Kabushiki Kaisha Sega

Hiroyuki Uchida

Masanori Hosomi

Hiroyuki Ohmori

Yutaka Higo

Kazuhiro Bessho

Kazutaka Yamane

Tetsuya Asayama

Yo Sato

Naoki Hase

Hiroaki Tanaka

Tetsuo Sekiya

Yutaka Soda

Shigeru Kimura

Takahiko Watanabe

Akitoshi Maeda

Katsunobu Suzuki

Kazushige Takechi

Setsuo Kaneko

Shigeyoshi Imakoshi

Naoki Fujiwara

Shinsuke Matsuno

Katsuhiko Suzuki

Tsutomu Hamada

Shinichi Nakata

Kenji Takano

Hideo Suyama

Shusaku Kido

Hirofumi Ihara

Akira Fujita

Takasuke Hayase

Satoshi Ihida

Junkichi Sugita

Satoshi Doi

Yoshiyuki Iso

Yoshiaki Sato

Shinji Baba

Jun Nakajima

Yoshihiko Hirai

Shuuichi Kariyazaki

Kazuyuki Nakagawa

Yasuhiro Iida

Satoru Seko

Yasuo Kanda

Hiroshi Hayama

Yasuji Hashimoto

Tsuneo Nemoto

Shin Sasaki

Hiroyuki Yamauchi

Ryo Tsutsui

Takanori Okuma

Hiroshi Takino

Keita Tsuchiya

Shigeyuki Hara

Takuya Warashina

Shouichi Kuroha

Kazuya Tanabe

Tae Yoshikawa

Akira Haga

Jian Huang

Toshio Okubo

Toshihiko Harano

Junichi Ishida

Kiyofumi Kudou

Hisanobu Shimodouzono

Takao Iwasaki

Isamu Sorimachi

Mariko Saga

Kenji Tokuda

Kenkichi Umeda

Koichi Tsutsumi

Shiko Nakamura

Masato Nakata

Yoshiyuki Ikebe

Shinya Nishiyama

Yuji Kayashima

Takehiro Nagaki

Tatsuo Masuda

Yutaka Souda

Tatsuhiko Asano

Katsushi Terajima

Isao Nikai

Katsuhiro Nakamichi

Yuji Marui

Tomohiro Nishida

Noboru Wakabayashi

Toshikazu Hiasa

Katsuhiko Akiyama

Kazuyuki Kosei

Hiroyuki Oketani

Shuichi Yamashina

Koji Kiyono

Kazuaki Namiki

Yasuo Sasamura

Yukihiro Yasuda

Masaharu Ugai

Tsutomu Fukusho

Kuzutaka Yamane

Koichi Goto

Kousaku Ohira

A storage device according to an aspect of the present disclosure includes a plurality of storage elements (e.g., MTJ element) each including a fixed layer with a fixed magnetization direction, a storage layer with a changeable magnetization direction, and an insulating layer provided between the fixed layer and the storage layer, an underlayer (e.g., lower insulating layer) on which the plurality of storage elements is provided in an array, and a semiconductor substrate having a surface on which the underlayer is laminated. The underlayer has an inclined surface inclined with respect to the surface, and any of the plurality of storage elements is provided on the inclined surface.

Storage device, electronic apparatus, and method of manufacturing storage device

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Storage element and storage apparatus

A semiconductor apparatus includes a nonvolatile memory cell array including a plurality of first memory cells and a plurality of second memory cells including a first memory elementand a second memory elementincluding a resistance-variable nonvolatile memory element and a first selection transistor electrically connected to the first memory elementand the second memory element, in which a plurality of first memory elementsand a plurality of second memory elementsare arranged in a two-dimensional matrix in a first direction and a second direction different from the first direction and on the same interlayer insulating layer, the first memory elementis larger than the second memory element, and the first memory elementand the second memory elementare disposed adjacent to each other along the second direction.

Semiconductor apparatus and method for manufacturing the same

A magnetic storage element and an electronic apparatus having a reduced writing current while retaining a magnetism retention property of a storage layer. The magnetic storage element includes a spin orbit layer extending in one direction, a writing line that is electrically coupled to the spin orbit layer, and allows a current to flow in an extending direction of the spin orbit layer, a tunnel junction element including a storage layer, an insulator layer, and a magnetization fixed layer that are stacked in order on the spin orbit layer, and a non-magnetic layer having a film thickness of 2 nm or less, and disposed at any stack position between the spin orbit layer and the insulator layer.

Magnetic storage element and electronic apparatus

A memory element including a layered structure including a memory layer having magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information stored therein, a magnetization-fixed layer having magnetization perpendicular to the film face, which becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

Memory element, memory apparatus

A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Storage element

A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

Magnetic element

Provided is a magnetic storage element including a stack structure which includes a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is reversible, and a non-magnetic layer sandwiched between the fixed layer and the storage layer. The magnetization direction has a direction along a stack direction of the stack structure, and the fixed layer or the storage layer has a region which contains at least one contained element selected from the element group consisting of B, C, N, Al, Mg, and Si at 30 atm % or more and 80 atm % or less.

Magnetic storage element, magnetic head, magnetic storage device, electronic apparatus, and method for manufacturing magnetic storage element

There is provided a magnetic storage element including: a storage layer; a reference layer provided at least one surface side of the storage layer with a non-magnetic layer in between; a magnetization fixation layer provided at a surface side opposite to a surface of the reference layer at which the storage layer is provided, with a non-magnetic layer in between; and a magnetization assist layer provided at a surface side opposite to a surface of the magnetization fixation layer at which the reference layer is provided, with a non-magnetic layer in between, in which change in a magnetization direction is easier than in the storage layer.

Magnetic storage element

A magnetoresistive element includes: a first laminated structure body having a first surface and a second surfaceB facing the first surface; and a second laminated structure body formed by laminating a storage layer, an intermediate layer, and a magnetization fixed layer, the second laminated structure body having a first surface and a second surface facing the first surface, the first surface being positioned facing the second surface of the first laminated structure body. The first laminated structure body has a laminated structure including, from the first surface side of the first laminated structure body, a first layer made of a metal nitride and a second layer made of ruthenium or a ruthenium compound.

Magnetoresistive element and electronic device having high heat resistance

The present technology relates to a storage device that realizes both a high information retention property and a low power consumption. A storage device includes a fixed layer, a storage layer, an intermediate layer, and a heat generation layer. The fixed layer includes a first ferromagnetic layer that includes a fixed perpendicular magnetization. The storage layer includes a second ferromagnetic layer that includes a perpendicular magnetization invertible by a spin injection. The intermediate layer is formed of an insulator and is arranged between the storage layer and the fixed layer. The heat generation layer is formed of a resistance heating element and is arranged in at least one of the storage layer and the fixed layer. With this configuration, it becomes possible to provide a storage device that realizes both a high information retention property and a low power consumption.

Storage device, storage apparatus, magnetic head, and electronic apparatus

The present disclosure is to provide a ferromagnetic tunnel junction element and a method of manufacturing the ferromagnetic tunnel junction element capable of avoiding changes in the characteristics of the element and maintaining a high fabrication yield, while avoiding an increase in the area occupied by the element and an increase in the number of manufacturing steps. The ferromagnetic tunnel junction element to be provided includes: a first magnetic layer; a first insulating layer disposed on the first magnetic layer; a second magnetic layer containing a magnetic transition metal, the second magnetic layer being disposed on the first insulating layer; and a magnesium oxide film containing the magnetic transition metal, the magnesium oxide film being disposed to cover the side surfaces of the second magnetic layer.

Ferromagnetic tunnel junction element and method of manufacturing the same

To provide a magnetic memory capable of performing stable recording while suppressing occurrence of an inversion error. Provided is a magnetic memory including a spin orbit layer in which a spin-polarized electron is generated by a current, a magnetic memory element having a laminated structure including a magnetic layer in which a magnetization direction changes according to information to be recorded and an insulating layer, and provided on the spin orbit layer, and a voltage application layer for applying a voltage to the magnetic layer via the insulating layer, in which the voltage application layer applies a voltage to the magnetic layer at a same time as the current flowing in the spin orbit layer to change magnetic anisotropy or a magnetic damping constant of the magnetic layer.

Magnetic memory and magnetic memory recording method

Growing community of inventors

Kanagawa, Japan

Hiroyuki Uchida